AOD4184A
40V N-Channel MOSFET
General Description
The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications.
Product Summary
VDS |
40V |
ID (at VGS=10V) |
50A |
RDS(ON) (at VGS=10V) |
< 7mΩ |
RDS(ON) (at VGS = 4.5V) |
< 9.5mΩ |
100% UIS Tested |
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100% Rg Tested |
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TO252 |
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DPAK |
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D |
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Top View |
Bottom View |
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D |
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D |
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G |
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Absolute Maximum Ratings TA=25°C unless otherwise noted |
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Parameter |
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Symbol |
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Maximum |
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Units |
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Drain-Source Voltage |
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VDS |
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40 |
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V |
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Gate-Source Voltage |
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VGS |
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±20 |
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V |
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Continuous Drain |
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TC=25°C |
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ID |
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50 |
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Current G |
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TC=100°C |
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40 |
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A |
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Pulsed Drain Current C |
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IDM |
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120 |
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Continuous Drain |
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TA=25°C |
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IDSM |
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13 |
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A |
Current |
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TA=70°C |
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10 |
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Avalanche Current C |
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IAS, IAR |
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35 |
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A |
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Avalanche energy L=0.1mH C |
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EAS, EAR |
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61 |
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mJ |
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B |
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TC=25°C |
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PD |
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50 |
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W |
Power Dissipation |
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TC=100°C |
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25 |
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A |
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TA=25°C |
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PDSM |
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2.3 |
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W |
Power Dissipation |
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TA=70°C |
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1.5 |
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Junction and Storage Temperature Range |
TJ, TSTG |
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-55 to 175 |
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°C |
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Thermal Characteristics
Parameter |
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Symbol |
Typ |
Max |
Units |
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Maximum Junction-to-Ambient A |
t ≤ 10s |
RθJA |
18 |
22 |
°C/W |
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Maximum Junction-to-Ambient A D |
Steady-State |
44 |
55 |
°C/W |
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Maximum Junction-to-Case |
Steady-State |
RθJC |
2.4 |
3 |
°C/W |
Rev0 : Sep 2009 |
www.aosmd.com |
Page 1 of 6 |
AOD4189
P-Channel Enhancement Mode Field Effect Transistor
General Description |
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Features |
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The AOD4189 uses advanced trench technology and |
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VDS (V) = -40V |
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design to provide excellent RDS(ON) with low gate |
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ID = -40A |
(VGS = -10V) |
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charge. With the excellent thermal resistance of the |
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RDS(ON) < 22mΩ |
(VGS = -10V) |
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DPAK package, this device is well suited for high |
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RDS(ON) < 29mΩ |
(VGS = -4.5V) |
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current load applications. |
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-RoHS Compliant |
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100% UIS Tested! |
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100% Rg Tested! |
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-Halogen Free* |
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TO-252 |
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D-PAK |
Bottom View |
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Top View |
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D |
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D |
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S |
G |
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G |
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GS
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter |
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Symbol |
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Maximum |
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Units |
Drain-Source Voltage |
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VDS |
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-40 |
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V |
Gate-Source Voltage |
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VGS |
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±20 |
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V |
Continuous Drain |
TC=25°C |
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-40 |
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Current B,H |
TC=100°C |
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ID |
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-28 |
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A |
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Pulsed Drain CurrentC |
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IDM |
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-50 |
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Avalanche Current C |
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IAR |
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-35 |
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Repetitive avalanche energy L=0.1mH C |
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E |
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61 |
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mJ |
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AR |
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TC=25°C |
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PD |
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62.5 |
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Power Dissipation B |
TC=100°C |
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31 |
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W |
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TA=25°C |
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PDSM |
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2.5 |
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Power Dissipation A |
TA=70°C |
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1.6 |
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Junction and Storage Temperature Range |
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TJ, TSTG |
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-55 to 175 |
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°C |
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Thermal Characteristics |
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Parameter |
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Symbol |
Typ |
Max |
Units |
Maximum Junction-to-Ambient A,G |
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t ≤ 10s |
RθJA |
15 |
20 |
°C/W |
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Maximum Junction-to-Ambient A,G |
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Steady-State |
41 |
50 |
°C/W |
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Maximum Junction-to-Case D,F |
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Steady-State |
RθJC |
2 |
2.4 |
°C/W |
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Alpha & Omega Semiconductor, Ltd. |
www.aosmd.com |
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