ROHM VT6Z1 Technical data

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Power management (dual transistors)

VT6Z1

zStructure zDimensions (Unit : mm)
Silicon epitaxial planar transistor

zFeatures

Very small package with two transistors.

zApplications

Switch, LED driver

zPackaging specifications zInner circuit

Type
VT6Z1

Package
Code
Basic ordering

unit (pieces)

Taping

T2R

8000

z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

∗1

Pw=1mS Single pulse

Symbol

V

CBO
CEO

V
V

EBO

I

C

I

CP

Limits

−20 V

−20 V

∗1

−5

Unit

V
mA−200
mA−400

<Tr2> (NPN)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

∗1

Pw=1mS Single pulse

Symbol

V

CBO 20 V
CEO

V
VEBO 5

I

C

ICP

Limits

Unit

20 V

V

mA200

∗1

mA400

<Tr1 and Tr2>

Parameter

Power dissipation

Total
Element

Symbol

P

Junction temperature
Storage temperature

∗2

Each terminal mounted on a recommended land

T

D

T

stg

Limits

150

∗2

120

j

150

−55 to +150 °C

Unit
mW

mW

°C

VMT6

1.2 ± 0.1

0.14

(6) (4)(5)

0.1

0.1
±

±

1.2

0.92

(1) (3)(2)

0.14

0.4

0.8 ± 0.1

Abbreviated symbol : Z1

Each lead has same dimensions.

(6) (5) (4)

(1) Emitter
(2) Base

Tr

1

(1)

2

Tr

(3) Collector
(4) Emitter

(3)

(5) Base
(6) Collector

(2)

0.16

0.4

(Tr1
(Tr1
(Tr2
(Tr2
(Tr2
(Tr1

0.1
±

0.5 ± 0.1

0.2

0 ~ 0.05

±

0.05

0.13 ± 0.05

0.1
±

0.2

UNIT : mm

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)
<Tr1> (PNP)

Parameter

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

<Tr2> (NPN)

Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO
EBO

h

f

CEO
CBO
EBO

FE
T

−20

−20

−5

−

−

−

120

−

−

−

−

−

−

−

−0.12

−

350

3

−

−

−

−0.1

−0.1

−0.30

560

−

−

V
V
V

µA
µA

V

−

MHz

pF

I

C

= −1mA

C

= −50µA

I
I

E

= −50µA

CB

=−20V

V

EB

=−5V

V
I

C

=−100mA, IB=−10mA

CE

=−2V, IC=−1mA

V

CE

=−10V, IE=10mA, f=100MHz

V
V

CB

=−10V, IE=0A, f=1MHz

Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

V

CEO
CBO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

20
20

5

−

−

−

120

−

−

−

−

−

−

−

0.12

−

400

2

−

−

−

0.1

0.1

0.30
560

−

−

V
V
V

µA
µA

V

−

MHz

pF

I

C

=1mA

C

=50µA

I
I

E

=50µA

CB

=20V

V

EB

=5V

V

C

=100mA, IB=10mA

I

CE

=2V, IC=1mA

V
V

CE

=10V, IE=−10mA, f=100MHz

V

CB

=10V, IE=0A, f=1MHz

Data Sheet VT6Z1

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A