ROHM VT6Z1 Technical data

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Power management (dual transistors)

VT6Z1

zStructure zDimensions (Unit : mm)
Silicon epitaxial planar transistor

zFeatures

Very small package with two transistors.

zApplications

Switch, LED driver

zPackaging specifications zInner circuit

Type
VT6Z1

Package
Code
Basic ordering

unit (pieces)

Taping

T2R

8000

z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

∗1

Pw=1mS Single pulse

Symbol

V

CBO
CEO

V
V

EBO

I

C

I

CP

Limits

−20 V

−20 V

∗1

−5

Unit

V
mA−200
mA−400

<Tr2> (NPN)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

∗1

Pw=1mS Single pulse

Symbol

V

CBO 20 V
CEO

V
VEBO 5

I

C

ICP

Limits

Unit

20 V

V

mA200

∗1

mA400

<Tr1 and Tr2>

Parameter

Power dissipation

Total
Element

Symbol

P

Junction temperature
Storage temperature

∗2

Each terminal mounted on a recommended land

T

D

T

stg

Limits

150

∗2

120

j

150

−55 to +150 °C

Unit
mW

mW

°C

VMT6

1.2 ± 0.1

0.14

(6) (4)(5)

0.1

0.1
±

±

1.2

0.92

(1) (3)(2)

0.14

0.4

0.8 ± 0.1

Abbreviated symbol : Z1

Each lead has same dimensions.

(6) (5) (4)

(1) Emitter
(2) Base

Tr

1

(1)

2

Tr

(3) Collector
(4) Emitter

(3)

(5) Base
(6) Collector

(2)

0.16

0.4

(Tr1
(Tr1
(Tr2
(Tr2
(Tr2
(Tr1

0.1
±

0.5 ± 0.1

0.2

0 ~ 0.05

±

0.05

0.13 ± 0.05

0.1
±

0.2

UNIT : mm

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2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)
<Tr1> (PNP)

Parameter

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

<Tr2> (NPN)

Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO
EBO

h

f

CEO
CBO
EBO

FE
T

−20

−20

−5

−

−

−

120

−

−

−

−

−

−

−

−0.12

−

350

3

−

−

−

−0.1

−0.1

−0.30

560

−

−

V
V
V

µA
µA

V

−

MHz

pF

I

C

= −1mA

C

= −50µA

I
I

E

= −50µA

CB

=−20V

V

EB

=−5V

V
I

C

=−100mA, IB=−10mA

CE

=−2V, IC=−1mA

V

CE

=−10V, IE=10mA, f=100MHz

V
V

CB

=−10V, IE=0A, f=1MHz

Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

V

CEO
CBO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

20
20

5

−

−

−

120

−

−

−

−

−

−

−

0.12

−

400

2

−

−

−

0.1

0.1

0.30
560

−

−

V
V
V

µA
µA

V

−

MHz

pF

I

C

=1mA

C

=50µA

I
I

E

=50µA

CB

=20V

V

EB

=5V

V

C

=100mA, IB=10mA

I

CE

=2V, IC=1mA

V
V

CE

=10V, IE=−10mA, f=100MHz

V

CB

=10V, IE=0A, f=1MHz

Data Sheet VT6Z1

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2009.06 - Rev.A

zElectrical characteristics curves

<Tr1> (PNP)

-1000
VCE =2V

(mA)

-100

C

COLLECTOR CURRENT : I

Ta=125°C

25°C

-10

-55°C

-1

-0.1

-0.01

0 -0.2 -0.4 -0.6 -0.8 -1

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :

I

B

-100

(mA)

C

=1.0mA

I

-80

B

=0.9mA

I

B

=0.8mA

-60

-40

-20

COLLECTOR CURRENT : I

0

0 -1-2-3-4-5

CE

(V)

V

Ta=25

Data Sheet VT6Z1

B

=0.7mA

I

I

B

=0.6mA

B

=0.5mA

I

B

=0.4mA

I

B

=0.3mA

I

B

=0.2mA

I

I

B

=0.1mA

°C

B

=0mA

I

1000

FE

Ta=125°C

DC CURENT GAIN : h

10

25°C

-55°C

-0.1 -1 -10 -100 -1000

COLLECTOR CURRENT : I

VCE=2V

C

(mA)

-1

Ta=25

°C

IC/I

B

(sat) (V)

CE

IC/I

= 20/1

B =

10/1

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

-1 -10 -100 -1000

COLLECTOR CURRENT : IC (mA)

100

10

Cob

Cib (pF)

Cob (pF)

1

Ta=25

°C

f=1MHz

E

=0

I

I

C

=0

0.1

-0.01 -0.1 -1 -10 -100

COLLECTOR TO BASE VOLTAGE : V

EMITTER TO BASE VOLTAGE : V

Cib

-1

(sat) (V)

CE

-0.1

IC/IB= 10/1

Ta=125°C

25°C

-55°C

1000

(MHz)

T

100

VCE = 10V

Ta=25

°C

VOLTAGE : V

COLLECTOR SATURATION

-0.01

-1 -10 -100 -1000

COLLECTOR CURRENT : I

CB

(V)

EB

(V)

C

(mA)

10

TRANSITION FREQUENCY :f

-0.1 -1 -10 -100 -1000

EMITTER CURRENT : I

E

(mA)

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2009.06 - Rev.A

<Tr2> (NPN)

1000

VCE =2V

100

10

1

0.1

COLLECTOR CURRENT : IC (mA)

0.01

0 0.2 0.4 0.6 0.8 1

BASE TO EMITTER VOLTAGE : VBE (V)

Ta=125°C

25°C

-55°C

I

B=0.9mA

B=0.8mA

COLLECTOR CURRENT : IC (mA)

IB=1.0mA

100

80

60

40

20

0

I

012345

COLLECTOR TO EMITTER VOLTAGE :

V

CE (V)

Ta=25

°C

B=0.7mA

I

I

B=0.6mA

I

B=0.5mA

B=0.4mA

I

B=0.3mA

I

I

B=0.2mA

I

B=0.1mA

I

B=0mA

1000

FE

100

Ta=125°C

DC CURENT GAIN : h

25°C

-55°C

10

0.1 1 10 100 1000
COLLECTOR CURRENT : I

Data Sheet VT6Z1

VCE=2V

C (mA)

1

Ta=25

°C

IC/I

B = 20/1

IC/I

CE(sat) (V)

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

100

10

Cib (pF)

Cob (pF)

1

0

0.01 0.1 1 10 100

COLLECTOR TO BASE VOLTAGE : VCB (V)

B =10/1

1 10 100 1000

COLLECTOR CURRENT : IC (mA)

Cib

Ta=25

f=1MHz

E=0

I

C=0

I

EMITTER TO BASE VOLTAGE : V

Cob

°C

EB(V)

1

IC/IB= 10/1

Ta=125°C

25°C

CE(sat) (V)

VOLTAGE : V

COLLECTOR SATURATION

0.01

-55°C

0.1

1 10 100 1000

COLLECTOR CURRENT : IC (mA)

1000

VCE = 10V

Ta=25

(MHz)

T

100

TRANSITION FREQUENCY :f

10

°C

0.1 1 10 100 1000

EMITTER CURRENT : IE (mA)

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Notes

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consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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Notice

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