Power management (dual transistors)
VT6X11
zStructure zDimensions (Unit : mm)
NPN silicon epitaxial planar transistor
zFeatures
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
zApplications
Current mirror circuits
zPackaging specifications zInner circuit
Type
VT6X11
Package
Code
Basic ordering
unit (pieces)
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total
Power dissipation
Element
Junction temperature
Range of storage temperature
∗1
Pw=1mS Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO 20 V
CEO
V
VEBO 5
I
C
ICP
P
T
T
stg
Limits
20 V
∗1
150
∗2
D
120
j 150
−55 to +150 °C
Unit
V
mA200
mA400
mW
mW
°C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CEO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
DC current gain ratio
Transition frequency
Output capacitance
BV
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
h
FE
(Tr1) /
h
FE
f
T
Cob
(Tr2)
20
20
5
−
−
−
120
0.9
−
−
−
−
−
−
−
0.12
−
−
400
2
VMT6
Each lead has same dimensions.
(6) (5) (4)
(1) (3)(2)
−
−
−
0.1
0.1
0.30
560
1.1
−
−
V
V
V
µA
µA
V
−
−
MHz
pF
1.2 ± 0.1
0.14
(6) (4)(5)
0.1
0.1
±
±
1.2
0.92
(1) (3)(2)
0.14
0.4
0.8 ± 0.1
Abbreviated symbol : X11
Tr2
Tr1
I
C
=1mA
C
=50µA
I
I
E
=50µA
CB
=20V
V
EB
=5V
V
C
=100mA, IB=10mA
I
CE
=2V, IC=1mA
V
CE
=2V, IC=1mA
V
CE
=10V, IE=−10mA, f=100MHz
V
V
CB
=10V, IE=0A, f=1MHz
0.16
0.4
(1) Base
(2) Emitter
(3) Emitter
(4) Collector
(5) Collector
(5) Base
(6) Collector
(6) Base
0.1
±
0.5 ± 0.1
0.2
0 ~ 0.05
±
0.05
0.13
0.1
±
0.05
±
0.2
UNIT : mm
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr1)
(Tr2)
(Tr1)
(Tr2)
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Data Sheet VT6X11
zElectrical characteristics curves
1000
VCE =2V
(mA)
C
100
Ta=125°C
10
1
0.1
COLLECTOR CURRENT : I
0.01
1
(sat) (V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
25°C
-55°C
0 0.2 0.4 0.6 0.8 1
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=25
°C
IC/I
B
= 20/1
IC/I
B =
10/1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
B
=0.9mA
B
IB=1.0mA
I
=0.8mA
I
100
(mA)
C
80
60
40
20
COLLECTOR CURRENT : I
0
012345
COLLECTOR TO EMITTER VOLTAGE :
1
IC/IB= 10/1
Ta=125°C
(sat) (V)
CE
25°C
-55°C
CE
(V)
V
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Ta=25
°C
B
=0.7mA
I
B
=0.6mA
I
I
B
=0.5mA
B
=0.4mA
I
B
=0.3mA
I
B
=0.2mA
I
I
B
=0.1mA
I
B
=0mA
1000
FE
100
Ta=125°C
DC CURENT GAIN : h
25°C
-55°C
10
0.1 1 10 100 1000
COLLECTOR CURRENT : I
1000
VCE = 10V
Ta=25
(MHz)
T
°C
100
TRANSITION FREQUENCY :f
10
0.1 1 10 100 1000
EMITTER CURRENT : IE (mA)
VCE=2V
C
(mA)
100
Cib
10
Cib (pF)
Cob (pF)
1
Ta=25
Cob
°C
f=1MHz
E
=0
I
I
C
=0
0
0.01 0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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