Datasheet VT6T1 Datasheet (ROHM)

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Power management (dual transistors)

VT6T1

zStructure zDimensions (Unit : mm)
PNP silicon epitaxial planar transistor

zFeatures

Very small package with two transistors.

zApplications

Switch, LED driver

zPackaging specifications zInner circuit

Type
VT6T1

Package
Code
Basic ordering

unit (pieces)

Taping

T2R

8000

z Absolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Total

Power dissipation

Element

Symbol

V
V
VEBO −5

ICP
P

Junction temperature
Storage temperature

∗1

Pw=1mS Single pulse

∗2

Each terminal mounted on a recommended land

T

CBO −20 V
CEO

I

C

D

T

stg

Limits

−20 V

∗1

150

∗2

120

j 150

−55 to +150 °C

Unit

V
mA−200
mA−400

mW
mW

°C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

BV
BV
BV

I
I

V

CE(sat)

h

Cob

CBO
EBO

f

CEO
CBO
EBO

FE
T

−

20

−

20

−

−

−

−

120

−

−

−

−

5

−

−

−

−

0.12

−

350

3

VMT6

Each lead has same dimensions.

(6) (5) (4)

Tr

1

(1)

−

−

−

−

0.1

µA

−

0.1

µA

−

0.30

560

MHz

−

pF

−

1.2 ± 0.1

0.14
(6) (4)(5)

0.1

0.1
±

±

1.2

0.92

(1) (3)(2)

0.14

2

Tr

(2)

(3)

V

C

=

−

1mA

I
I

C

=

−

E

=

I

CB

V

EB

V
I

C

=

CE

V
V

CE

V

CB

50µA

−

50µA

=

=

−

100mA, I

=

=

=

V
V

V

−

0.16

0.4

0.4

0.8 ± 0.1

Abbreviated symbol : T1

(1) Emitter
(2) Base
(3) Collector
(4) Emitter
(5) Base
(6) Collector

−

−

−

−

−

(Tr1
(Tr1
(Tr2
(Tr2
(Tr2
(Tr1

20V
5V

B

2V, I

C

=

−

10V, IE=10mA, f=100MHz
10V, IE=0A, f=1MHz

±

0.05

=

−

1mA

0.5 ± 0.1

0.13

±

0.05

10mA

0.1
±

0.2

0 ~ 0.05

0.1
±

0.2

UNIT : mm

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

Data Sheet VT6T1

zElectrical characteristics curves

B=1.0mA

I

I

-1000

C (mA)

-100

-10

VCE =2V

Ta=125°C

25°C

-55°C

-100

-1

-0.1

COLLECTOR CURRENT : I

-0.01

COLLECTOR CURRENT : IC (mA)

0 -0.2 -0.4 -0.6 -0.8 -1

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :

-1

Ta=25

°C

IC/I

B = 20/1

IC/I

CE(sat) (V)

B =10/1

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

CE(sat) (V)

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

-1 -10 -100 -1000

COLLECTOR CURRENT : IC (mA)

B=0.9mA

-80

-60

-40

-20

0

0 -1-2-3-4-5

-1

IC/IB= 10/1

Ta=125°C

25°C

-55°C

-1 -10 -100 -1000

COLLECTOR CURRENT : I

I

B=0.8mA

CE (V)

V

Ta=25

C (mA)

°C

B=0.7mA

I

I

B=0.6mA

I

B=0.5mA

I

B=0.4mA

I

B=0.3mA

IB=0.2mA

I

B=0.1mA

I

B=0mA

1000

FE

Ta=125°C

DC CURENT GAIN : h

10

25°C

-55°C

-0.1 -1 -10 -100 -1000

COLLECTOR CURRENT : I

1000

VCE = 10V

Ta=25

(MHz)

T

°C

100

10

TRANSITION FREQUENCY :f

-0.1 -1 -10 -100 -1000

EMITTER CURRENT : I

VCE=2V

C (mA)

E (mA)

100

10

Cob

Cib (pF)

Cob (pF)

1

Ta=25

°C

f=1MHz

I

E=0

I

C=0

0.1

-0.01 -0.1 -1 -10 -100

COLLECTOR TO BASE VOLTAGE : V

EMITTER TO BASE VOLTAGE : V

Cib

CB (V)

EB(V)

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

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