ROHM US6U37 Technical data
US6U37
s
(
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications
zDimension
TUMT6
zInner circuit
(6) (5)
Unit : mm)
0.2Max.
Abbreviated symbol : U37
(4)
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
US6U37
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
∗2
(1)Gate
(3)
(2)Source
(3)Cathode
(4)Anode
(5)Anode
(6)Drain
P
DSS
GSS
D
DP
S
SP
∗1 ESD protection diode
∗2 Body diode
Limits Unit
30
±12
±1.5
∗1
±6.0
∗1
∗2
D
0.6
6.0
150
VV
VV
AI
AI
AI
AI
°CTch
W / ELEMENT0.7
∗1
(1) (2)
Limits Unit
RM
R
I
F
∗1
I
FSM
Tj
∗2
P
D
25
20
0.7
10
150
0.5
VV
VV
A
A
°C
W / ELEMENT
1/4
Transistors
<MOSFET and Di>
Parameter Symbol
Power dissipation
Range of storage temperature
∗1 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter Symbol
<Di>
Parameter Symbol
Forward voltage
Reverse current
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
GSS
DSS
Y
oss
rss
t
t
Q
SD
V
I
R
∗
∗
fs
iss
∗
∗
r
∗
∗
f
∗
g
∗
gs
∗
gd
F
Limits Unit
∗1
D
−55 to +150
Min.−Typ. Max.
1.0
Unit
W / TOTALP
°CTstg
Conditions
−±10 µAVGS=±12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 240 I
mΩ
− 180 250 mΩ
− 240 340 I
mΩ
1.5 −−SV
− 80 − pF V
− 1412− pF V
−
−
−
−
−
−
−
−−nC R
Min. Typ. Max.
− pF f=1MHz
7
− ns
9
− ns
15
− ns
6
− ns
1.6
2.2 nC
0.5
− nC I
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
= 1.5A, VGS= 4V
I
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
VDD 15V
ID= 0.75A
V
GS
= 4.5V
R
L
20Ω
R
G
=10Ω
15V, VGS= 4.5V
V
DD
= 1.5A
D
10Ω, R
L
= 10Ω
G
Conditions
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Min. Typ. Max.
−−
−−
0.49 V
200
Unit
µA
= 0.7A
I
F
V
R
Conditions
= 20V
US6U37
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