US6U37
s
(
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications
zDimension
TUMT6
zInner circuit
(6) (5)
Unit : mm)
0.2Max.
Abbreviated symbol : U37
(4)
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
US6U37
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
∗2
(1)Gate
(3)
(2)Source
(3)Cathode
(4)Anode
(5)Anode
(6)Drain
P
DSS
GSS
D
DP
S
SP
∗1 ESD protection diode
∗2 Body diode
Limits Unit
30
±12
±1.5
∗1
±6.0
∗1
∗2
D
0.6
6.0
150
VV
VV
AI
AI
AI
AI
°CTch
W / ELEMENT0.7
∗1
(1) (2)
Limits Unit
RM
R
I
F
∗1
I
FSM
Tj
∗2
P
D
25
20
0.7
10
150
0.5
VV
VV
A
A
°C
W / ELEMENT
1/4
Transistors
<MOSFET and Di>
Parameter Symbol
Power dissipation
Range of storage temperature
∗1 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter Symbol
<Di>
Parameter Symbol
Forward voltage
Reverse current
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
GSS
DSS
Y
oss
rss
t
t
Q
SD
V
I
R
∗
∗
fs
iss
∗
∗
r
∗
∗
f
∗
g
∗
gs
∗
gd
F
Limits Unit
∗1
D
−55 to +150
Min.−Typ. Max.
1.0
Unit
W / TOTALP
°CTstg
Conditions
−±10 µAVGS=±12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 240 I
mΩ
− 180 250 mΩ
− 240 340 I
mΩ
1.5 −−SV
− 80 − pF V
− 1412− pF V
−
−
−
−
−
−
−
−−nC R
Min. Typ. Max.
− pF f=1MHz
7
− ns
9
− ns
15
− ns
6
− ns
1.6
2.2 nC
0.5
− nC I
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
= 1.5A, VGS= 4V
I
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
VDD 15V
ID= 0.75A
V
GS
= 4.5V
R
L
20Ω
R
G
=10Ω
15V, VGS= 4.5V
V
DD
= 1.5A
D
10Ω, R
L
= 10Ω
G
Conditions
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Min. Typ. Max.
−−
−−
0.49 V
200
Unit
µA
= 0.7A
I
F
V
R
Conditions
= 20V
US6U37
2/4
Transistors
zElectrical characteristics curves
1000
Ta=25°C
f=1MHz
GS
=0V
V
100
10
CAPACITANCE : C (pF)
1
0.01
DRAIN-SOURCE VOLTAGE : VDS (V)
vs. Drain-Source Voltage
10
1
(A)
D
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 2.01.5 2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
10
(Ω)
DS (on)
Ciss
Crss
Coss
0.1 1 10 100
Fig.1 Typical Capacitance
VDS=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
VGS=4.5V
Pulsed
1000
100
10
SWITCHING TIME : t (ns)
1
0.01
tf
td(off)
td(on)
tr
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
1.0
0.9
(Ω)
0.8
DS (on)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0
ID=1.5A
ID=
0.75A
123 10456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
10
(Ω)
DS (on)
Ta=25°C
V
DD
=15V
GS
=4.5V
V
G
=10Ω
R
Pulsed
Ta=25°C
Pulsed
VGS=4.0V
Pulsed
US6U37
6
Ta=25°C
DD
=15V
V
(V)
D
=1.5A
I
5
GS
G
=10Ω
R
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
(A)
S
0.1
Ta=125°C
1
SOURCE CURRENT : I
0.01
0.0
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10
(Ω)
DS (on)
10.5 1.5 2
75°C
25°C
−25°C
0.5 1.0 1.5
VGS=0V
Pulsed
VGS=2.5V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
1
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
Ta=125°C
1
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/4
Transistors
100000
REVERSE CURRENT : IR [uA]
Pulsed
10000
1000
100
10
1
0.1
0.01
0 5 10 15 20 25
REVERSE VOLTAGE : VR [V]
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
Fig.10 Reverse Current vs. Reverse
zMeasurement circuit
V
GS
R
G
℃
℃
℃
℃
D.U.T.
1
pulsed
(A)
F
0.1
0.01
FORWARD CURRENT : I
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig.11 Forward Current v s. Fo rward Vo ltage
Ta = 125
Ta = 75
Ta = 25
Ta= - 25
FORWARD VOLTAGE : V
℃
℃
℃
℃
(V)
F
D
I
V
DS
R
L
V
DD
V
V
10%
GS
DS
10%
t
d(on)
t
on
Pulse Width
90%
t
r
90%
t
d(off)
US6U37
50%50%
10%
90%
t
f
t
off
Fig.12 Switching Time Test Circuit
Fig.13 Switching Time Waveforms
V
G
V
GS
I
G (Const.)
R
G
Fig.14 Gate Charge Measurement Circuit
D
I
D.U.T.
V
DS
R
L
V
DD
V
GS
Q
gs
Fig.15 Gate Charge Waveform
g
Q
Q
gd
Charge
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V
characteristics and therefore, higher leak current. Please consider enough the
F
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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