ROHM US6T4 Technical data

US6T4

Transistors

Low frequency amplifier

US6T4

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current

CE(sat) : max. −250mV

2) V
At I

C=−1.5A / IB=−30mA

is large.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Each Termminal Mounted on a Recommended
∗3 Mounted on a 25mm

×

25mm

t

×

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

0.8mm Ceramic substrate.

C

C

Limits

−15

−12

−6

−3

−6

400

1.0 W

150

−55 to +150

Unit

V
V
V
A
A

mW

°C
°C

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

CBO

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

BV
BV
BV

CBO

I

EBO

I

V

CE(sat)

h

Cob − 30 −

−15

CEO

−12

EBO

−6

−−

−−

−−120

FE

270 − 680

T

f

−

zDimensions (Unit : mm)

ROHM : TUMT6 Abbreviated symbol : T04

∗1
∗2
∗3

−−

−−

−−

−100

−100

−250 mV

280

−

zEquivalent circuit

(4)(5)(6)

(1) (2) (3)

V

I

C

= −10µA

V

I

C

= −1mA

V

I

E

= −10µA
nA VCB= −15V
nA VEB= −6V

IC= −1.5A, IB= −30mA

− V

CE

= −2V, IC= −500mA

MHz

VCE= −2V, IE=500mA, f=100MHz
V

CB

pF

= −10V, IE=0A, f=1MHz

0.2Max.

∗

∗

Rev.B 1/2

Transistors

zPackaging specifications

Package

Type

US6T4

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1

10

(A)

C

1

Code
Basic ordering unit (pieces)

125˚C

25˚C

− 40˚C

VCE= −2V
Pulsed

COLLECTOR CURRENT : IC (

Fig1. DC current gain

vs. collector current

110

A)

Taping

TR

3000

1

V)

(

CE(sat)

0.1

0.01

IC/IB=20/1
Pulsed

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage
vs. collector current

1000

125˚C

25˚C

− 40˚C

A)

Ta=25°C
VCE=2V
f=100MHz

10

V)

(

BE(sat)

1

− 40˚C

125˚C

IC/IB=20/1

BASE SATURATION VOLTAGE : V

Pulsed

10

0.1

0.001 0.01 0.1 1

Fig.3 Base−emitter saturation voltage
vs.collector current

1000

Cib

US6T4

25˚C

COLLECTOR CURRENT : IC (

I

C

=0A
f=1MHz
Ta=25

10

A)

°C

25˚C

0.1

125˚C

0.01

COLLECTOR CURRENT : I

IC/IB=20/1
Pulsed

0.001

0.1 1

BASE TO EMITTER CURRENT : VBE (V

Fig.4 Grounded emitter propagation
charactereistics

− 40˚C

100

TRANSITION FREQUENCY : fr (MHz)

10

10

0.01 0.1 1 10

)

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

Cob

100

10

EMITTER INPUT CAPACITANCE : Cib (pF)

0.001 0.01 0.1 1 10

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

E

(A)

Fig 6. Collector output capacitance vs. collector-base voltage

EMITTER TO BASE VOLTAGE : VEB(V)

COLLECTOR TO BASE VOLTAGE : V

Emitter input capacitance vs. emitter-base volatage

100

CB

(V)

Rev.B 2/2