ROHM US6K4 Technical data

US6K4

Transistors

1.8V Drive Nch+Nch MOSFET

US6K4

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Two Nch MOSFET s are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 1.8V drive.

zApplications

Switching

zPackaging specifications zInner circuit

Type

US6K4

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

∗2

Limits Unit

20

±10
±1.5
±3.0

0.6

2.4

1.0

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

125

Rth(ch-a)

∗

Rev.A 1/3

TUMT6

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(5)

∗1

(2)

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT0.7

°CTch
°CTstg

°C/W / TOTAL

°C/W / ELEMENT179

Abbreviated symbol : K04

(4)

∗1

∗2

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain

(3)

(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

0.2Max.

Transistors

zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

−±10 µAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

− 220 310 I

1.6 −−SV

− 110 − pF V

− 1815− pF V

−

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−nC

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

mΩ

D

= 1.5A, VGS= 2.5V

I

D

= 0.8A, VGS= 1.8V

mΩ

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

2.5 nC

− nC

ID= 1.0A

V

DD

V

GS

= 4.5V

R

L

= 10Ω

R

GS

=10Ω

V

10V

DD

= 4.5V

V

GS

I

= 1.5A

D

US6K4

Conditions

10V

Parameter Symbol

V

SD

Min. Typ. Max.

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Unit

Conditions

Rev.A 2/3