ROHM US6K2 Technical data

US6K2

Transistors

4V Drive Nch+Nch MOSFET

US6K2

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Two Nch MOSFET s are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

zApplications

Switching

zPackaging specifications zInner circuit

Type

US6K2

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

∗2

Limits Unit

30
20

±1.4
±5.6

0.6

5.6

1.0

150

−55 to +150

zThermal resistance

Parameter
Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

125

Rth(ch-a)

∗

TUMT6

Abbreviated symbol : K02

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(5)

∗1

(2)

VV
VV
AI
AI
AI
AI

W / TOTAL

W / ELEMENT0.7

°CTch
°CTstg

°C/W / TOTAL

°C/W / ELEMENT179

0.2Max.

(4)

∗1

∗2

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain

(3)

(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

Rev.B 1/3

Transistors

zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

V

SD

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min.−Typ. Max.

− 10 µAVGS=20V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

1.0 − 2.5 V V

− 170 240 I

− 250 350 mΩ

− 270 380 I
1 −−SV

− 70 − pF V

− 1512− pF V

−

6

−

6

−

13

−

8

−

1.4

−

0.6

−

−−nC R

0.3

Min. Typ. Max.

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Unit

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.4A, VGS= 10V

mΩ

D

I

= 1.4A, VGS= 4.5V

D

mΩ

= 1.4A, VGS= 4V

D

= 10V, ID= 1.4A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

V

− ns

− ns

− ns

− ns

2.0 nC

− nC I

DD

ID= 0.7A
V

GS

= 10V

R

L

= 21Ω

R

G

=10Ω

15V, VGS= 5V

V

DD

= 1.4A

D

= 11Ω, RG= 10Ω

L

Unit

US6K2

Conditions

15V

Conditions

Rev.B 2/3