Page 1
SCT3160KL
N-channel SiC power MOSFET
Range of storage temperature
T
stg
-55 to +175
°C
Gate - Source voltage (DC)
V
GSS
-4 to +22
V
Junction temperature
T
j
175
°C
Gate-Source Surge Voltage (t
surge
< 300nsec)
V
GSS_surge
*3
-4 to +26
V
Tc = 100°C
I
D
*1
12
A
Pulsed drain current
I
D,pulse
*2
42
A
Continuous drain current
Tc = 25°C
I
D
*1
17
A
Unit
Drain - Source voltage
V
DSS
1200
V
Value
・Induction heating
・Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
C11
・DC/DC converters
Marking
SCT3160KL
・Switch mode power supplies
lPackaging specifications
5) Simple to drive
Type
Packing
Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm)
-
Tape width (mm)
-
lApplication
Basic ordering unit (pcs)
30
・Solar inverters
Taping code
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
Recommended Drive Voltage
V
GS_op
*4
0 / +18
V
lOutline
V
DSS
1200V
TO-247N
R
DS(on)
(Typ.)
160mW
I
D
17A
P
D
103W
lInner circuit
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(2)
(3)
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TSQ50211-SCT3160KL
14.Jun.2018 - Rev.005
Datasheet
Page 2
SCT3160KL
W
Gate input resistance
R
G
f = 1MHz, open drain
-18-
160
208
Tj = 125°C
-
240-5.6
V
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
= 18V, ID = 5A
mW
Tj = 25°C
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 2.5mA
2.7--
Gate - Source leakage current
I
GSS+
V
GS
= +22V, V
DS
= 0V
--100
nA
Gate - Source leakage current
I
GSS-
V
GS
= -4V, V
DS
= 0V
-
-
-100
nA110
Tj = 150°C
-2-
V
Zero gate voltage
drain current
I
DSS
V
DS
= 1200V, V
GS
= 0V
mA
T
j
= 25°C
-
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
1200--
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
R
thJC
-
1.12
1.46
C/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
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TSQ50211-SCT3160KL
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Datasheet
Page 3
SCT3160KL
V-18
-
Gate plateau voltage
V
(plateau)
V
DD
= 600V, ID = 5A
-
9.6
-
nC
Gate - Source charge
Q
gs
*5
ID = 5A
-11-
Gate - Drain charge
Q
gd
*5
VGS = 18V
Total gate charge
Q
g
*5
V
DD
= 600V
-42-
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
mJ
Turn - off switching loss
E
off
*5
-12-
Turn - on switching loss
E
on
*5
VDD = 600V, ID=5A
V
GS
= 18V/0V
RG = 0W L=750mH
*Eon includes diode
reverse recovery
-62-
-
t
r
*5
VGS = 18V/0V
-18-
Turn - off delay time
t
d(off)
*5
RL =80W
-2418
-
pF
Turn - on delay time
t
d(on)
*5
V
DD
= 400V, ID =5A
-14-
ns
Rise time
Effective output capacitance,
energy related
C
o(er)
V
GS
= 0V
V
DS
= 0V to 600V
-45-
-
Fall time
t
f
*5
RG = 0W
-
25
S
Input capacitance
C
iss
V
GS
= 0V
-
398
-
pF
Output capacitance
C
oss
Transconductance
g
fs
*5
V
DS
= 10V, ID = 5A
-
2.5
-
V
DS
= 800V
-41-
Reverse transfer capacitance
C
rss
f = 1MHz
-
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
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TSQ50211-SCT3160KL
14.Jun.2018 - Rev.005
Datasheet
Page 4
SCT3160KL
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause
thermal runaway.
*5 Pulsed
A
Q
rr
*5
-26-
nC
Peak reverse recovery current
I
rrm
*5
-4-
V
Reverse recovery time
t
rr
*5
IF =5A, VR = 600V
di/dt = 1100A/ms
-13-
ns
Reverse recovery charge
Forward voltage
V
SD
*5
V
GS
= 0V, IS = 5A
-
3.2
-
A
Inverse diode direct current,
pulsed
ISM
*2
--42
A
Inverse diode continuous,
forward current
IS
*1
Tc = 25°C
--17
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
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TSQ50211-SCT3160KL
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Datasheet
Page 5
SCT3160KL
lElectrical characteristic curves
0
20
40
60
80
100
120
0 50 100 150 200
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Ta= 25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
[W]
Case Temperature : TC[°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS[V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : R
th
[K/W]
Pulse Width : PW[s]
0.1
1
10
100
1000
0.1 1 10 100 1000 10000
T
a
= 25ºC
Single Pulse
PW= 10ms
PW = 100µs
PW = 1ms
PW = 100ms
Operation in this area is limited by R
DS(ON)
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TSQ50211-SCT3160KL
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Datasheet
Page 6
SCT3160KL
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS[V]
Fig.5 Typical Output Characteristics(II)
Drain - Source Voltage : VDS[V]
Fig.6 Tj= 150ºC Typical Output
Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS[V]
Fig.7 Tj= 150ºC Typical Output
Characteristics(II)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS[V]
Drain Current : I
D
[A]
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10
Ta= 25ºC
Pulsed
10V
VGS= 8V
16V
18V
14V
20V
12V
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5
Ta = 25ºC
Pulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10
Ta = 150ºC
Pulsed
10V
VGS= 8V
18V
16V
20V
14V
12V
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5
Ta = 150ºC
Pulsed
10V
VGS= 8V
16V
14V
20V
18V
12V
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Datasheet
Page 7
SCT3160KL
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Drain Current : I
D
[A]
Gate - Source Voltage : VGS[V]
Fig.9 Typical Transfer Characteristics (II)
Gate - Source Voltage : VGS[V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj[ºC]
Fig.11 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID[A]
Drain Current : I
D
[A]
0.1
1
10
0.1 1 10
V
DS
= 10V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
V
DS
= 10V
ID = 2.5mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
T
a
= 150ºC
T
a
= 75ºC
T
a
= 25ºC
Ta= -25ºC
V
DS
= 10V
Pulsed
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
V
DS
= 10V
Pulsed
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Datasheet
Page 8
SCT3160KL
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
Gate - Source Voltage : VGS[V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Junction Temperature : Tj[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
Drain Current : ID[A]
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
0.00
0.08
0.16
0.24
0.32
0.40
0.48
0.56
0.64
6 8 10 12 14 16 18 20 22
ID = 5A
ID = 11A
Ta = 25ºC
Pulsed
0.00
0.08
0.16
0.24
0.32
0.40
0.48
0.56
0.64
-50 0 50 100 150 200
V
GS
= 18V
Pulsed
ID = 11A
ID = 5A
0.01
0.1
1
1 10 100
V
GS
= 18V
Pulsed
Ta = 150ºC
T
a
= 12
5ºC
T
a
= 75ºC
T
a
= 25ºC
Ta = -25ºC
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Datasheet
Page 9
SCT3160KL
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS[V]
Fig.16 Coss Stored Energy
Drain - Source Voltage : VDS[V]
Fig.17 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID[A]
Fig.18 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg[nC]
Coss Stored Energy : E
OSS
[mJ]
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800
Ta= 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
C
iss
C
oss
C
rss
Ta = 25ºC
f = 1MHz
V
GS
= 0V
0
5
10
15
20
0 5 10 15 20 25 30 35 40 45
Ta = 25ºC
VDD= 600V
ID = 5A
Pulsed
1
10
100
1000
10000
0.1 1 10 100
t
d(on)
t
d(off)
Ta = 25ºC
V
DD
= 400V
V
GS
= 18V
RG = 0W
Pulsed
t
f
t
r
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Page 10
SCT3160KL
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Switching Energy : E [mJ]
Drain - Source Voltage : VDS[V]
Fig.20 Typical Switching Loss
vs. Drain Current
Drain Current : ID[A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Switching Energy : E [mJ]
External Gate Resistance : RG[W]
Switching Energy : E [mJ]
0
80
160
240
320
400
480
560
0 2 4 6 8 10 12 14 16 18 20
T
a
= 25ºC
V
DD
=600V
VGS= 18V/0V
R
G
=0W
L=750mH
E
on
E
off
0
20
40
60
80
100
120
140
200 400 600 800 1000
T
a
= 25ºC
I
D
=5A
V
GS
= 18V/0
V
R
G
=0W
L=
750mH
E
on
E
off
0
80
160
240
320
400
480
560
0 5 10 15 20 25 30
Ta= 25ºC
VDD=600V
ID=5A
VGS= 18V/0V
L=750mH
E
on
E
off
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Datasheet
Page 11
SCT3160KL
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : I
S
[A]
Source - Drain Voltage : VSD[V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Inverse Diode Forward Current : IS[A]
Reverse Recovery Time : t
rr
[ns]
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
V
GS
= 0V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
1 10 100
T
a
= 25ºC
di / dt =
1100
A / us
V
R
= 600V
V
GS
= 0V
Pulsed
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Datasheet
Page 12
SCT3160KL
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
V
surge
I
rr
Eon= ID×V
DS
E
off
= ID×V
DS
I
D
V
DS
Same type
device as
D.U.T.
D.U.T.
I
D
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Datasheet
Page 13
Notes
The information contained herein is subject to change without notice.
1)
Before you use our Products, please contact our sales representative and verify the latest specifica-
2)
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
3)
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
4)
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
5)
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
Notice
The Products specified in this document are not designed to be radiation tolerant.
6)
For use of our Products in applications requiring a high degree of reliability (as exemplified
7)
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace
8)
equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
9)
the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensur the accuracy of the information contained in this
10)
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
Please use the Products in accordance with any applicable environmental laws and regulations,
11)
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
When providing our Products and technologies contained in this document to other countries,
12)
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
This document, in part or in whole, may not be reprinted or reproduced without prior consent of
13)
ROHM.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
R1102
S
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SCT3160KL - Web Page
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Datasheet
Distribution Inventory
Part Number SCT3160KL
Package TO-247N
Unit Quantity 450
Minimum Package Quantity 30
Packing Type Tube
Constitution Materials List inquiry
RoHS Yes
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