ROHM SCT2450KEC Datasheet

Datasheet

SCT2450KE

N-channel SiC power MOSFET

V

DSS

R

DS(on)

(Typ.)

I

D

P

D

Features

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

1200V

450m

10A

85W

Outline

TO-247

(2)

(1)

Inner circuit

(2)

(1)

*1

(3)

Packaging specifications

Packaging

(3)

(1) Gate (2) Drain (3) Source

*1 Body Diode

Tube

Application

• Solar inverters

• DC/DC converters

• Switch mode power supplies

• Induction heating

• Motor drives

Absolute maximum ratings (Ta = 25°C)

Parameter

Drain - Source voltage

T

= 25°C

c

Continuous drain current

T

= 100°C

c

Pulsed drain current

Reel size (mm) Tape width (mm) -

Type

Basic ordering unit (pcs) Packing code Marking

SCT2450KE

Symbol Value Unit

V

DSS

I

D

I

D

I

D,pulse

*1

*2

1200 V

10 A

7A

25 A

-

30

C

Gate - Source voltage (DC) Gate - Source surge voltage (T Power dissipation (T

= 25°C) P

c

Junction temperature Range of storage tem per at ure

˂ 300nsec)

surge

1/12

V

GSS

V

GSS-surge

T

stg

6 to 22

*3

D

j

10 to 26

85 W

175 °C

55 to 175

2017.07 - Rev.D

V V

°C

Datasheet

SCT2450KE

Thermal resistance

Parameter Symbol

Values

Unit

Min. Typ. Max. Thermal resistance, junction - case Thermal resistance, junction - am bient Soldering temperature, wavesoldering for 10s

Electrical characteristics (T

= 25°C)

a

Parameter Symbol Conditions

Drain - Source breakdown voltage

Zero gate voltage drain current

Gate - Source leakage curr ent

V

(BR)DSSVGS

I

DSS

I

GSS

= 0V, ID = 1mA

V

= 1200V, V

DS

T

= 25°C

j

T

= 150°C

j

V

= 22V, V

GS

R R

T

DS

thJC

thJA

sold

GS

= 0V

- 1.36 1.77 °C/W

--50

- - 265

Values

Min. Typ. Max.

1200 -

-V

-110

-2

-

- - 100 nA

°C/W

°C

Unit

A

Gate - Source leakage curr ent Gate threshold voltage

I

GSS

V

GS (th)

V

GS

V

DS

*1 Limited only by maximum temperature allowed. *2 PW  10s, Duty cycle  1%

*3 Example of acceptable Vgs waveform

= 6V, V

DS

= 0V

= VGS, ID = 0.9mA

--

1.6 2.8

100

4.0 V

nA

*4 Pulsed

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2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristics (T

Parameter Symbol Conditions

Static drain - source on - state resistance

Gate input resistance Transconductance Input capacitance

Reverse transfer capacitance Effective output capacitance,

energy related Turn - on delay time

Rise time Turn - off delay time Fall time

= 25°C)

a

R

DS(on)

R

g

C

t

d(on)

t

d(off)

t

G

fs

iss

oss

rss

o(er)

*4

r

*4

f

V

= 18V, ID = 3A

GS

*4

= 25°C

T

j

T

= 125°C

j

f = 1MHz, open drain - 25

*4

V

= 10V, ID = 3A

DS

V

= 0V

GS

= 800V

V

DS

f = 1MHz V

= 0V

GS

= 0V to 500V

V

DS

*4

V

*4

= 400V, V

DD

= 3A

I

D

RL = 133

GS

= 18V

RG = 0

Values

Min. Typ. Max.

- 450 585

- 610 -

-

- 1.0 -

- 463 -

-214-

-31-

-19-

-17-

-38-

-34-

Unit

m



S

pFOutput capacitance

pF

ns

Turn - on switching loss

Turn - off switching loss

Gate Charge characteristics (T

Parameter Symbol Conditions

Total gate charge

Gate - Drain charge Gate plateau voltage

*4

E

on

*4

E

off

= 25°C)

a

*4

Q

g

*4

Q

gs

*4

Q

gd

V

(plateau)

VDD = 600V, ID=3A

= 18V/0V

V

GS

= 0, L=500H

R

G

includes diode

*E

on

reverse recovery

V

= 400V

DD

ID = 3A VGS = 18V V

= 400V, ID = 3A

DD

-47-

-17-

Values

Min. Typ. Max.

-27-

-7-

-9-

- 10.5 -

J

Unit

nCGate - Source charge

V

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2017.07 - Rev.D

Datasheet

SCT2450KE

Body diode electrical characteristics (Source-Drain) (T

Parameter Symbol Conditions

Inverse diode continuous, forward current

*1

I

S

Tc = 25°C

Inverse diode direct current, pulsed

Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current

*2

I

SM

*4

V

SD

*4

t

rr

*4

Q

rr

*4

I

rrm

= 0V, IS = 3A

GS

IF = 3A, VR = 400V di/dt = 110A/s

= 25°C)

a

Values

Unit

Min. Typ. Max.

--10

A

--25A

-4.3-

V

-19-ns

-13-nC

-1.4- A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

R

th1

R

th2

R

th3

230m 687m 441m

K/W

C

th1

C

th2

C

th3

219

1.29m

13.1m

Ws/K

4/12

2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve

90 80 70

[W]

D

60 50 40 30 20

Power Dissipation : P

10

0

0 50 100 150 200

Junction Temperature : Tj[°C]

Fig.2 Maximum Safe Operating Area

100

PW = 100s

10

[A]

D

1

Operation in this area

Drain Current : I

0.1

0.01

0.1 1 10 100 1000 10000

is limited by R

Ta=25ºC Single Pulse

DS

Drain - Source Voltage : V

PW = 1ms

PW = 10ms

(on)

PW = 100ms

[V]

DS

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

10

[K/W]

th

Transient Thermal Resistance : R

0.01

Ta=25ºC Single Pulse

1

0.1

0.0001 0.001 0.01 0.1 1 10

Pulse Width : PW[s]

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Datasheet

SCT2450KE

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I)

10

[A]

D

Drain Current : I

8

6

4

2

0

0246810

20V

18V

16V

Ta=25ºC Pulsed

VGS= 8V

Drain - Source Voltage : VDS[V]

14V

12V

10V

Fig.5 Typical Output Characteristics(II)

[A]

D

Drain Current : I

5

4

3

2

1

0

012345

20V

18V

16V

Drain - Source Voltage : V

14V

12V

10V

VGS= 8V

Ta=25ºC Pulsed

[V]

DS

[A]

D

Drain Current : I

Fig.6 T

= 150°C Typical Output

j

Characteristics(I)

10

Ta=150ºC Pulsed

8

16V

6

4

2

0

0246810

14V

Drain - Source Voltage : VDS[V]

20V

18V

12V

10V

VGS= 8V

[A]

D

Drain Current : I

Fig.7 T

= 150°C Typical Output

j

Characteristics(II)

5

20V

4

3

2

1

0

012345

Drain - Source Voltage : VDS[V]

16V

14V

18V

12V

10V

VGS= 8V

Ta=150ºC Pulsed

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2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)

10

VDS= 10V Plused

1

[A]

D

0.1

Drain Current : I

0.01

0.001 0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : V

Fig.10 Gate Threshold Voltage

vs. Junction Temperature

5

4.5

[V]

4

GS(th)

3.5 3

Ta=150ºC Ta=75ºC

=25ºC

T

a

T

= 25ºC

a

VDS= 10V ID= 1mA

GS

[V]

10

VDS= 10V

9

Plused

8 7

[A]

D

6 5

Drain Current : I

4 3 2

Ta=150ºC Ta=75ºC

=25ºC

T

a

T

= 25ºC

a

1 0

0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : V

GS

[V]

Fig.11 Transconductance vs. Drain Current

10

VDS= 10V Plused

[S]

fs

1

2.5 2

1.5 1

0.5

Gate Threshold Voltage : V

0

-50 0 50 100 150 200

Junction Temperature : Tj[°C]

7/12

0.1 Ta=150ºC

Ta=75ºC

Transconductance : g

=25ºC

T

a

T

= 25ºC

a

0.01

0.01 0.1 1 10

Drain Current : ID[A]

2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.12 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

1.4

1.2

1

ID = 6A

Static Drain - Source On-State Resis tance

[]

DS(on)

: R

0.8

0.6

0.4

0.2

0

6 8 10 12 14 16 18 20 22

ID = 3A

Gate - Source Voltage : VGS[V]

Ta=25ºC Pulsed

Fig.13 Static Drain - Source On - State

Resistance vs. Junction Temperature

1

VGS= 18V

0.9

Plused

0.8

Static Drain - Source On-State Resis tance

0.7

0.6

[]

0.5

DS(on)

0.4

: R

0.3

0.2

0.1

0

-50 0 50 100 150 200

Junction Temperature : Tj[ºC]

ID = 6A

ID = 3A

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current

10

VGS= 18V Plused

[]

1

DS(on)

: R

0.1

Static Drain - Source On-State Resis tance

0.1 1 10 100

Drain Current : ID[A]

Ta=150ºC Ta=125ºC

=75ºC

T

a

=25ºC

T

a

T

= 25ºC

a

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2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.15 Typical Capacitance

vs. Drain - Source Voltage

10000

1000

100

Capacitance : C [pF]

10

Ta=25ºC

Ta=25ºC f = 1MHz

f = 1MHz

= 0V

V

GS

1

0.1 1 10 100 1000

Drain - Source Voltage : VDS[V]

Fig.16 Coss Stored Energy

10

Ta=25ºC

9

[J]

8

C

iss

C

oss

C

rss

OSS

Coss Stored Energy : E

7 6 5 4 3 2 1 0

0 200 400 600 800

Drain - Source Voltage : VDS[V]

Fig.17 Switching Characteristics

10000

t

d(on)

f

t

d(off)

t

r

Drain Current : ID[A]

Switching Time : t [ns]

1000

100

10

1

0.1 1 10 100

Ta= 25ºC VDD= 400V

= 18V

V

GS

R

= 0

G

Pulsed

Fig.18 Dynamic Input Characteristics

20

Ta= 25ºC

[V]

GS

Gate - Source Voltage : V

VDD= 400V

= 3A

I

D

Pulsed

15

10

5

0

0 5 10 15 20 25 30

Total Gate Charge : Qg[nC]

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2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.19 Typical Switching Loss

vs. Drain - Source Voltage

100

Ta= 25ºC

90

ID= 3A

= 18V/0V

V

80 70 60 50 40 30

Switching Energy : E [J]

20 10

GS

R

= 0

G

L=500H

0

0 200 400 600 800 1000

Drain - Source Voltage : VDS[V]

Fig.20 Typical Switching Loss

vs. Drain Current

300

Ta= 25ºC

250

E

on

200

150

100

E

off

Switching Energy : E [J]

VDD= 600V

= 18V/0V

V

GS

R

= 0

G

L=500H

E

on

E

50

off

0

024681012

Drain Current : ID[A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance

120 110 100

90 80 70 60 50 40 30

Switching Energy : E [J]

20 10

Ta= 25ºC VDD= 600V

= 3A

I

D

= 18V/0V

V

GS

L=500H

0

0 5 10 15 20 25 30

External Gate Resistance : RG[]

E

on

E

off

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2017.07 - Rev.D

Datasheet

SCT2450KE

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current

vs. Source - Drain Voltage

10

[A]

S

0.1

Inverse Diode Forward Current : I

0.01

VGS=0V Pulsed

1

Ta=150ºC Ta=75ºC

=25ºC

T

a

T

= 25ºC

a

012345678

Source - Drain Voltage : VSD[V]

Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current

1000

Ta=25ºC

[ns]

rr

100

Reverse Recovery Time : t

10

110

Inverse Diode Forward Current : IS[A]

di / dt = 110A / s V

R

VGS= 0V Pulsed

= 400V

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2017.07 - Rev.D

Datasheet

SCT2450KE

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Pulse width

50%

10%

90%

10% 10%

RG

VGS

D.U.T.

D

I

VDS

RL

V

GS

V

DS

VDD

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

off

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

V

G

Q

g

V

GS

Q

gs

Q

gd

I

G(Const.)

V

GS

D

I

V

DS

R

L

D.U.T.

V

DD

Charge

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Same type

D.U. T.

device as D.U.T.

R

G

Eon= ID×V

L

I

F

V

DRIVER MOSFET

D.U.T.

I

D

DD

V

DS

I

D

DS

I

rr

E

off

50%

t

= ID×V

f

DS

V

surge

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

I

F

D.U.T.

D.U. T.

R

G

I

F

DRIVER MOSFET

L

V

DD

0

t

rr

I

d

rr

Irr 90%

Irr 100%

/ d

Irr 10%

t

12/12

2017.07 - Rev.D

Notes

The information contained herein is subject to change without notice.

1)

Before you use our Products, please contact our sales representative and verify the latest specifica-

2) tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-

3) ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are

4) provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and

5) examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

Notice

The Products specified in this document are not designed to be radiation tolerant.

6)

For use of our Products in applications requiring a high degree of reliability (as exemplified

7) below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace

8) equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with

9) the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this

10) document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations,

11) such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries,

12) you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of

13) ROHM.

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1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall not be in an y way responsible or liabl e for failure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

Notice – WE Rev.001