ROHM 2SA2094 User Manual
A
1
2
Medium power transistor (60V, 2A)
2SA2094
Features Dimensions (Unit : mm)
1) High speed switching.
(Tf : Typ. : 30ns
at IC =
2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1A, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5866
Applications
Low frequency amplifier
High speed switching
Structure
PNP epitaxial planar silicon transistor
Packaging specifications
Taping
TL
3000
Type
2SA2094
Package
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits Unit
−60
−60
−6
−2
−4
500
150
−55 to 150
TSMT3
(1) Base
(2) Emitter
(3) Collector
V
V
V
A
A
mW
°C
°C
0.95
1.9
0.95
0.16
0.3 0.6
Abbreviated symbol : VP
∗
∗
2.8
1.6
)
1
(
)
2
(
0.4
)
3
(
0.85
0.7
0 0.1
Each lead has same dimensions
2.9
1.0MAX
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c
○
2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.
A
1
1
1
2
0
1000
SWITCHING TIME : (ns)
1000
DC CURRENT GAIN : h
0
0
1000
DC CURRENT GAIN : h
0
COLLECTOR SATURATION
)
0
COLLECTOR SATURATION
)
BASE EMITTER SATURATION
0
nt
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Condition
BV
V
BV
BV
I
CBO
I
EBO
CE (sat)
h
Cob
Ton
Tstg
f
Tf
CEO
CBO
EBO
FE
T
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
FE RANK
h
Q
120−270
Electrical characteristic curves
Ta=25°C
CC
= −25V
V
C
/ IB=10 / 1
I
100
Tstg
Tf
Ton
FE
−60
−60
−6
−
−
−
120
−
−
−
−
−
100
10
−200
300
25
25
100
30
Ta=125°C
Ta=25°C
Ta= −40°C
Data Sheet 2SA2094
−
−
−
−
−
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
−
V
V
V
μA
μA
mV
−
MHz
pF
ns
ns
ns
VCE= −2V
IC= −1mA
I
C
= −100μA
E
= −100μA
I
V
CB
V
EB
I
C
= −1A
I
B
= −0.1A
V
CE
C
= −100mA
I
CE
V
I
E
=100mA
f=10MHz
CB
V
I
E
=0mA
f=1MHz
I
C
= −2A
B1
= −200mA
I
B2
=200mA
I
CC
V
= −40V
= −4V
= −2V
= −10V
= −10V
25V
∗
∗
∗
∗
Ta=25°C
FE
100
10
VCE=5V
CE
=3V
V
CE
=2V
V
10
−0.01 −1
−10
−1
(V)
CE (sat)
−0.1
VOLTAGE : V
−0.01
−0.001 −1
Fig.4
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2011 ROHM Co., Ltd. All rights reserved.
−1−0.1
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
IC / IB=10 / 1
Ta=125°C
Ta=25°C
Ta= −40°C
−1−0.1−0.01
COLLECTOR CURRENT : IC (A)
Collector-Emitter Saturation
Voltage vs. Collector Current (Ι
1
−0.001 −1
COLLECTOR CURRENT : IC (A)
−1−0.1−0.01
Fig.2 DC Current Gain vs.
Collector Current (Ι)
−10
−1
(V)
CE (sat)
−0.1
VOLTAGE : V
−0.01
IC / IB=20 / 1
C
/ IB=10 / 1
I
−0.001 −1
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-Emitter Saturation
Ta=25°C
−1−0.1−0.01
Voltage vs. Collector Current (ΙΙ
1
−0.001 −1
COLLECTOR CURRENT : IC (A)
−1−0.1−0.01
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
−1
(V)
BE (sat)
−0.1
VOLTAGE : V
−0.01
−0.001 −1
COLLECTOR CURRENT : IC (A)
Ta=125°C
Ta=25°C
Ta= −40°C
IC / IB=10 / 1
−1−0.1−0.01
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Curre
2011.03 - Rev.
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