ROHM 2SA2094 User Manual

A

1
2

Medium power transistor (60V, 2A)

2SA2094

Features Dimensions (Unit : mm)

1) High speed switching.
(Tf : Typ. : 30ns

at IC =



2A)

2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1A, IB = 0.1A)

3) Strong discharge power for inductive load and
capacitance load.

4) Complements the 2SC5866

Applications

Low frequency amplifier
High speed switching

Structure
PNP epitaxial planar silicon transistor

Packaging specifications

Taping

TL

3000

Type

2SA2094

Package
Code
Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

DC
Pulsed

Power dissipation
Junction temperature
Range of storage temperature

∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits Unit

−60

−60

−6

−2

−4

500
150

−55 to 150

TSMT3

(1) Base
(2) Emitter
(3) Collector

V
V
V
A
A

mW

°C
°C

0.95

1.9

0.95

0.16

0.3 0.6

Abbreviated symbol : VP

∗

∗

2.8

1.6

)

1

(

)

2

(

0.4

)

3

(

0.85

0.7

0 0.1

Each lead has same dimensions

2.9

1.0MAX

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2011 ROHM Co., Ltd. All rights reserved.

2011.03 - Rev.

A

1

1

1

2

0

1000

SWITCHING TIME : (ns)

1000

DC CURRENT GAIN : h

0

0

1000

DC CURRENT GAIN : h

0

COLLECTOR SATURATION

)

0

COLLECTOR SATURATION

)

BASE EMITTER SATURATION

0

nt

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Condition

BV

V

BV
BV

I

CBO

I

EBO

CE (sat)

h

Cob

Ton

Tstg

f

Tf

CEO
CBO
EBO

FE

T

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time
Storage time
Fall time

∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits

FE RANK

h

Q

120−270

Electrical characteristic curves

Ta=25°C

CC

= −25V

V

C

/ IB=10 / 1

I

100

Tstg

Tf

Ton

FE

−60

−60

−6

−

−

−

120

−

−

−

−

−

100

10

−200

300

25

25

100

30

Ta=125°C
Ta=25°C
Ta= −40°C

Data Sheet 2SA2094

−

−

−

−

−

−

−

−

−1.0

−1.0

−500

270

−

−

−

−

−

−

V
V
V

μA
μA

mV

−

MHz

pF

ns
ns
ns

VCE= −2V

IC= −1mA
I

C

= −100μA

E

= −100μA

I
V

CB

V

EB

I

C

= −1A

I

B

= −0.1A

V

CE

C

= −100mA

I

CE

V
I

E

=100mA

f=10MHz

CB

V
I

E

=0mA

f=1MHz
I

C

= −2A

B1

= −200mA

I

B2

=200mA

I

CC

V

= −40V
= −4V

= −2V

= −10V

= −10V

25V

∗

∗

∗

∗

Ta=25°C

FE

100

10

VCE=5V

CE

=3V

V

CE

=2V

V

10

−0.01 −1

−10

−1

(V)

CE (sat)

−0.1

VOLTAGE : V

−0.01

−0.001 −1

Fig.4

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2011 ROHM Co., Ltd. All rights reserved.

−1−0.1

COLLECTOR CURRENT : IC (A)

Fig.1 Switching Time

IC / IB=10 / 1

Ta=125°C
Ta=25°C
Ta= −40°C

−1−0.1−0.01

COLLECTOR CURRENT : IC (A)

Collector-Emitter Saturation
Voltage vs. Collector Current (Ι

1

−0.001 −1

COLLECTOR CURRENT : IC (A)

−1−0.1−0.01

Fig.2 DC Current Gain vs.

Collector Current (Ι)

−10

−1

(V)

CE (sat)

−0.1

VOLTAGE : V

−0.01

IC / IB=20 / 1

C

/ IB=10 / 1

I

−0.001 −1

COLLECTOR CURRENT : IC (A)

Fig.5

Collector-Emitter Saturation

Ta=25°C

−1−0.1−0.01

Voltage vs. Collector Current (ΙΙ

1

−0.001 −1

COLLECTOR CURRENT : IC (A)

−1−0.1−0.01

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

−10

−1

(V)

BE (sat)

−0.1

VOLTAGE : V

−0.01

−0.001 −1

COLLECTOR CURRENT : IC (A)

Ta=125°C
Ta=25°C
Ta= −40°C

IC / IB=10 / 1

−1−0.1−0.01

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Curre

2011.03 - Rev.