Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN6324
2SA608N/2SC536N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Capable of being used in the low frequency to high
frequency range.
Features
· Large current capacity and wide ASO.
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
4.5
3.7
0.45
0.5
1.27
0.45 0.44
1.4max
0.6
123
2.5 2.5
4.0max
13.7
3.5
4.5
14.0
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
06)05–(V
05)–(V
6)–(V
051)–(Am
004)–(Am
005Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V6)–(=
hEF2VECI,V6)–(=
V
OBC
OBE
BC
V
BE
I,V04)–(=
0=1.0)–(Aµ
E
I,V5)–(=
0=1.0)–(Aµ
C
Am1)–(=*061*065
C
C
Am1.0)–(=07
* The 2SA608N/2SC536N are classified by 1mA hFE as follow
knaRFG
h
EF
023ot061065ot082
10700TS (KOTO) TA-2543 No.6324–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
Page 2
Continued on preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
-- V
C
–mA
--16
--12
C
--8
--4
Collector Current, I
0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE–V
I
--240
--200
C
--50
µA
--45
-- V
CE
µA
--40µA
--35µA
--30µA
--25
BE
2SA608N/2SC536N
V
µA
--20
--15µA
--10µA
T
EC
EB
2SA608N
µA
--5µA
2SA608N
VCE=--6V
EC
BC
)tas(I
C
)tas(I
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
IB=0
IT00496
sgnitaR
nimpytxam
I,V6)–(=
C
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am01)–(=002zHM
zHM1=f,V6)–(=
I,Am001)–(=
B
I,Am001)–(=
B
EB
Am01)–(=3.0)–(V
Am01)–(=0.1)–(V
0=06)–(V
=∞ 05)–(V
0=6)–(V
I
-- V
20
C
CE
50µA
45µA
40µA
35
µA
30µA
–mA
C
16
12
0.3Fp
)5.4(Fp
2SC536N
tinU
25µA
8
20µA
15µA
4
Collector Current, I
0
01020304050
Collector-to-Emitter Voltage, VCE–V
240
I
C
-- V
10µA
5µA
BE
IB=0
IT00497
2SC536N
VCE=6V
200
–mA
--160
C
--120
--80
Collector Current, I
--40
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Ta=75°C
Base-to-Emitter Voltage, VBE–V
h
-- I
1000
FE
DC Current Gain, h
100
FE
7
5
3
2
7
5
3
2
Ta=75°C
--25°C
C
25°C
–mA
160
C
120
-- I
°C
Ta=75
C
25°C
°C
°C
25
--25
IT00499
2SC536N
VCE=6V
80
°C
°C
25
--25
IT00498
2SA608N
VCE=--6V
Collector Current, I
40
0
0 0.2 0.4 0.6 0.8 1.21.0
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
Base-to-Emitter Voltage, VBE–V
h
FE
Ta=75°C
--25°C
10
325
--0.1
73257 3257 3257
Collector Current, IC–mA
--10 --100
--1000--1.0
IT00500
10
0.1
325
73257 3257 3257
Collector Current, IC–mA
10 100
IT00501
10001.0
No.6324–2/4
Page 3
1000
– MHz
T
2SA608N/2SC536N
f
-- I
T
C
7
5
3
2
2SA608N
VCE=--6V
1000
– MHz
T
7
5
3
2
f
-- I
T
C
2SC536N
VCE=6V
(sat) – V
Gain-Bandwidth Product, f
CE
Output Capacitance, Cob – pF
--1.0
--0.1
100
100
1.0
0.1
7
5
3
2
10
2573
--1.0
7
5
3
2
10
7
5
3
2
7
5
3
2
--0.1
7
5
3
2
7
5
Collector Current, IC–mA
23 57 23 57 23 57
Collector-to-Base Voltage, VCB-- V
2573
--10
Cob -- V
CB
VCE(sat) -- I
--100
--10--1.0 --100
C
2573
IT00502
2SA608N
f=1MHz
IT00504
2SA608N
IC / IB=--10
--1000
Gain-Bandwidth Product, f
(sat) – V
CE
100
100
Output Capacitance, Cob – pF
7
5
3
2
10
2573
1.0
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
23 57 23 57 23 57
0.1
1.0
7
5
3
2
0.1
7
5
Collector Current, IC–mA
Collector-to-Base Voltage, VCB-- V
2573
10
Cob -- V
CB
VCE(sat) -- I
100
2573
IT00503
1000
2SC536N
f=1MHz
101.0 100
IT00505
C
2SC536N
IC / IB=10
3
2
Collector-to-Emitter
Saturation Voltage, V
--0.01
1000
–mA
C
Collector Current, I
23 57 23 57 23 57
--1.0 --10
7
I
5
CP
3
2
I
C
100
7
5
3
2
10
7
5
3
2
1.0 10 100
Collector-to-Emitter Voltage, VCE–V
Collector Current, IC–mA
--100 --1000
A S O
For PNP, the polarity is reversed.
2SA608N / 2SC536N
10ms
100ms
DC operation
2537253757
IT00506
IT00511
3
2
Collector-to-Emitter
Saturation Voltage, V
0.01
–mW
C
Collector Dissipation, P
23 57 23 57 23 57
1.0 10
600
500
400
300
200
100
0
2006040 80 100 140120 160
Collector Current, IC–mA
P
C
100 1000
-- Ta
2SA608N / 2SC536N
Ambient Temperature, Ta – ˚C
IT00507
IT00510
No.6324–3/4
Page 4
2SA608N/2SC536N
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject
to change without notice.
PS No.6324–4/4
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