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Transistors
2SA2009
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
+0.1
0.3
–0.0
(0.425)
0.15
+0.10
–0.05
■ Features
• High collector to emitter voltage V
• Low noise voltage NV
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
−120 V
−120 V
−50 mA
−20 mA
150 mW
150 °C
−55 to +150 °C
−5V
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10˚
Marking Symbol: AR
±0.10
±0.1
2.1
1.25
5˚
+0.2
–0.1
±0.1
0.9
0.9
0 to 0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio
*
Collector to emitter saturation voltage V
CBO
I
CEO
CBO
CEO
EBO
h
FE
CE(sat)
Noise voltage NV VCE = −40 V, IC = −1 mA, GV = 80 dB 130 mV
Transition frequency f
T
Note)*: Rank classification
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700
VCB = −50 V, IE = 0 −100 nA
VCE = −50 V, IB = 0 −1 µA
IC = −10 µA, IE = 0 −120 V
IC = −1 mA, IB = 0 −120 V
IE = −10 µA, IC = 0 −5V
VCE = −5 V, IC = −2 mA 180 700
IC = −20 mA, IB = −2 mA − 0.6 V
Rg = 100 kW, Function = FLAT
VCB = −5 V, IE = 2 mA, f = 200 MHz 120 MHz
±0.1
0.2
1
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