Datasheet 2SA2040 Datasheet (SANYO)

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Page 1

Ordering number : ENN6913

2SA2040/2SC5707

PNP / NPN Epitaxial Planar Silicon Transistors

2SA2040 / 2SC5707

High Current Switching Applications

Applications

•

DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.

Features

• Adoption of FBET, MBIT process.

•

Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

Package Dimensions

unit : mm

2045B

[2SA2040 / 2SC5707]

6.5

5.0

0.85

0.7

0.6

2.3 2.3

0.8

1.5

5.5

1.6

7.0

7.5

Package Dimensions

unit : mm

2044B

2.3

0.5

1.2

1 : Base 2 : Collector 3 : Emitter 4 : Collector

SANYO : TP

[2SA2040 / 2SC5707]

6.5

5.0

0.85

0.6

2.3 2.3

0.8

1.55.5

7.0

2.5

0.5

1.2

0 to 0.2

2.3

0.5

1.2

1 : Base 2 : Collector 3 : Emitter 4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30101 TS IM TA-3233

No.6913-1/5

Page 2

2SA2040/2SC5707

Specifications

Note*( ) : 2SA2040 Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I Base Current I

Collector Dissipation P Junction T emperature Tj 150 °C

Storage T emperature T stg −55 to +150 °C

CBO CES CEO EBO

Tc=25°C15W

Electrical Characteristics at Ta=25°C

(--50)80 V (--50)80 V

(--)50 V

(--)6 V (--)8 A

(--)11 A

(--)2 A

1.0 W

Parameter Symbol Conditions

Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain-Bandwidth Product f Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF

Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V

Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn-On Time t Storage Time t Fall Time t

CBO EBO

(BR)CBOIC (BR)CESIC (BR)CEOIC (BR)EBOIE

stg

VCB=(--)40V, IE=0 (--)0.1 µA VEB=(--)4V, IC=0 (--)0.1 µA VCE=(--)2V, IC=(--)500mA 200 560 VCE=(--)10V, IC=(--)500mA (290)330 MHz

IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV

=(--)10µA, IE=0 (--50)80 V =(--)100µA, RBE=∞ 80 V =(--)1mA, RBE=∞ (--)50 V

=(--)10µA, IC=0 (--)6 V See specified test circuit. See specified test circuit. See specified test circuit.

min typ max

Ratings

(40)30

(225)420

Swicthing Time Test Circuit

I I

100µF 470µF

B1 B2

OUTPUT

PW=20µs D.C.≤1%

INPUT

50Ω

Unit

ns ns ns

VBE= --5V

20IB1= --20IB2= IC=2.5A For PNP, the polarity is reversed.

VCC=25V

No.6913-2/5

Page 3

2SA2040/2SC5707

-- V

--7

2SA2040

--6

--60mA

--5

-- A C

--4

--3

--100mA

--90mA

--80mA

--70mA

--50mA

--40mA

--30mA

--20mA

90mA

-- A C

100mA

-- V

80mA

70mA

60mA

50mA

40mA

30mA

20mA

10mA

--2

Collector Current, I

--1

0 --0.4 --0.8 --1.2 --1.6 --2.0

Collector-to-Emitter Voltage, VCE -- V

-- V

Ta=75°C

25°C

--25°C

--8

--7

--6

-- A C

--5

--4

--3

--2

Collector Current, I

--1

0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2

Base-to-Emitter V oltage, VBE -- V

-- I

1000

7 5

3 2

Ta=75°C

25°C

--25°C

--10mA

IB=0

IT00206

2SA2040 VCE= --2V

IT00208

2SA2040 VCE= --2V

Collector Current, I

2SC5707

0.4 0.8 1.2 1.6 2.0

Collector-to-Emitter Voltage, VCE -- V

-- V

-- A C

Collector Current, I

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Ta=75°C

°C

--25

Base-to-Emitter V oltage, VBE -- V

-- I

1000

7 5

3 2

Ta=75°C

25°C

--25°C

IB=0

IT00207

2SC5707 VCE=2V

IT00209

2SC5707 VCE=2V

100

7 5

DC Current Gain, h

3 2

--0.01

--1000

2SA2040

7 5

IC / IB=20

3 2

(sat) -- mV

--100

7 5

3 2

--10 7 5

Collector-to-Emitter

Saturation V oltage, V

3 2

--1.0

--0.01 --0.1

325

73257 3257

Collector Current, IC -- A

VCE(sat) -- I

--1.0

IT00210

Ta=75°C

--25°C

23 57 23 57 23 57

Collector Current, IC -- A

25°C

--1.0 --10

IT00212

100

7 5

DC Current Gain, h

3 2

--10--0.1

0.01

1000

7 5

3 2

(sat) -- mV

100

7 5

3 2

7 5

Collector-to-Emitter

Saturation V oltage, V

3 2

1.0

0.01 0.1

325

73257 3257

Collector Current, IC -- A

VCE(sat) -- I

1.0

IT00211

2SC5707 IC / IB=20

Ta=75°C

25°C

--25°C

23 57 23 57 23 57

Collector Current, IC -- A

1.0 10

IT00214

100.1

No.6913-3/5

Page 4

--10000 7 5

3 2

(sat) -- mV

--1000

7 5

3 2

--100 7 5

Collector-to-Emitter

Saturation V oltage, V

3 2

--10

--0.01 --0.1

--10000 7

(sat) -- mV

2SA2040/2SC5707

VCE(sat) -- I

Ta=75

--25°C

23 57 23 57 23 57

Collector Current, IC -- A

VBE(sat) -- I

2SA2040 IC / IB=50

°C

25°C

--1.0 --10

IT00213

2SA2040 IC / IB=50

10000

7 5

3 2

(sat) -- mV

1000

7 5

3 2

100

7 5

Collector-to-Emitter

Saturation V oltage, V

3 2

0.01 0.1

10000

7 5

(sat) -- mV

VCE(sat) -- I

2SC5707 IC / IB=50

°C

Ta=75

°C

--25

23 57 23 57 23 57

Collector Current, IC -- A

VBE(sat) -- I

25°C

1.0 10

IT00215

2SC5707 IC / IB=50

--1000 7

Base-to-Emitter

Saturation V oltage, V

--100

--0.01 --0.1 --1.0 --10

Ta= --25°C

75°C

23 57 23 57 23 57

25°C

Collector Current, IC -- A

5 3

-- pF

100

7 5

3 2

Output Capacitance, Cob

5 3

23 37752375

--0.1

Collector-to-Base Voltage, V

1000

7 5

-- MHz

Cob -- V

--1.0 --10

-- I

IT00216

2SA2040 f=1MHz

IT00218

-- V

2SA2040 VCE= --10V

1000

7 5

Base-to-Emitter

Saturation V oltage, V

100

0.01 0.1 1.0 10

Ta= --25°C

75°C

23 57 23 57 23 57

25°C

Collector Current, IC -- A

5 3

-- pF

100

7 5

3 2

Output Capacitance, Cob

5 3

23 3 357757

0.1

Collector-to-Base Voltage, V

1000

7 5

-- MHz

Cob -- V

1.0

-- I

IT00217

2SC5707 f=1MHz

255

IT00219

-- V

2SC5707 VCE=10V

100

7 5

3 2

Gain-Bandwidth Product, f

25773 25732573

--0.01

Collector Current, IC -- A

--0.1 --1.0 --10

IT00220

100

7 5

Gain-Bandwidth Product, f

25773 25732573

0.01

Collector Current, IC -- A

0.1 1.0 10

IT00221

No.6913-4/5

Page 5

ICP=11A

7 5

3 2

-- A C

1.0 7

5 3

0.1 7

Collector Current, I

5 3 2

0.01

IC=8A

DC Operation (Ta=25°C)

2SA2040 / 2SC5707 Tc=25°C Single Puls For PNP, the minus sign(--)is omitted

1.00.1 10 100

Collector-to-Emitter Voltage, VCE -- V

16 15 14

-- W C

A S O

100ms

10ms

500µs

DC Operation (Tc=25°C)

1ms

-- Tc

2SA2040 / 2SC5707

2SA2040/2SC5707

100

253725372537

IT02971

1.2

1.0

-- W C

0.8

0.6

0.4

Collector Dissipation, P

0.2

2006040 80 100 140120 160

Ambient Temperature, Ta -- °C

-- Ta

No heat sink

2SA2040 / 2SC5707

IT02972

Collector Dissipation, P

2006040 80 100 140120 160

Case Temperature, Tc -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

IT02973

This catalog provides information as of March, 2001. Specifications and information herein are subject to change without notice.

No.6913-5/5