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Transistors
2SA2028
Silicon PNP epitaxial planer type
For DC-DC converter
Unit: mm
+0.1
0.3
–0.0
(0.425)
0.15
+0.10
–0.05
■ Features
• Large current capacitance
• Low collector to emitter saturation voltage
• High-speed switching
Small type package, allowing downsizing and thinning of the
•
equipment.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
−20 V
−20 V
−5V
−3A
−1A
150 mW
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio
*
Collector to emitter saturation voltage V
Collector output capacitance C
Transition frequency f
CBO
CEO
EBO
h
FE
CE(sat)
ob
T
IC = −10 µA, IE = 0 −20 V
IC = −1 mA, IB = 0 −20 V
IE = −10 µA, , IC = 0 −5V
VCE = −2 V, IC = −100 mA 160 560
IC = −200 mA, IB = −10 mA −40 −100 mV
VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
VCB = −10 V, IE = 10 mA 170 MHz
f=200 MHz
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10°
S Mini Type Package (3-pin)
Marking Symbol: AT
±0.10
1.25
+0.2
±0.1
0.9
0.9
0 to 0.1
±0.1
2.1
–0.1
5°
±0.1
0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
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