Philips TEA5710T-N2 Datasheet

DATA SH EET

Product specification
File under Integrated Circuits, IC01

March 1994

INTEGRATED CIRCUITS

TEA5710; TEA5710T

AM/FM radio receiver circuit

March 1994 2

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

FEATURES

• Wide supply voltage range: 2.0 to 12 V

• Low current consumption: 7.5 mA at AM, 9.0 mA at FM

• High selectivity with distributed IF gain

• LED driver for tuning indication

• High input sensitivity: 1.6 mV/m (AM), 2.0µV (FM) for 26

dB S/N

• Good strong signal behaviour: 10 V/m at AM, 500 mV at
FM

• Low output distortion: 0.8% at AM, 0.3% at FM

• Designed for simple and reliable PC-board layout

• High impedance MOSFET input on AM

APPLICATIONS

• Portable AM/FM radio

• Clock radio

• Personal headphone radio

DESCRIPTION

The TEA5710 is a high performance Bimos IC for use in
AM/FM radios. All necessary functions are integrated:
from AM and FM front-end to detector output stages.

QUICK REFERENCE DATA

Conditions AM: f

i

= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,

unless otherwise specified. Conditions FM: f

i

= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with

S1 in position B and S2 in position A, unless otherwise specified.

ORDERING INFORMATION

Notes

1. SOT234-1; 1996 August 27.

2. SOT137-1; 1996 August 27.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

P

positive supply voltage 2.0 − 12 V

I

P

supply current

in AM mode 5.6 7.5 9.9 mA
in FM mode 7.3 9.0 11.2 mA

T

amb

operating ambient temperature range −15 −+60 °C

AM performance

V

in1

RF sensitivity 40 55 70 µV

V

13

AF output voltage 36 45 70 mV

THD total harmonic distortion − 0.8 2.0 %

FM performance

V

in3

RF sensitivity 1.0 2.0 3.8 µV

V

13

AF output voltage 47 58 69 mV

THD total harmonic distortion − 0.3 0.8 %

EXTENDED TYPE

NUMBER

PACKAGE

PINS PIN POSITION MATERIAL CODE

TEA5710 24 SDIL plastic SOT234AG

(1)

TEA5710T 24 SO24L plastic SOT137A

(2)

March 1994 3

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

Fig.1 Block diagram.

handbook, full pagewidth

MGE106

FM-RFIFM-RF

O

FM-MIXER

FM

FRONT-END

FM

MIXER

AM

FRONT-END

FM-IF1IFM-RF1

O

FM

IF 1

FM-IF2

I

FM

IF 2

FM-DEM

FM

DETECTOR

AM

MIXER

FM

OSCILLATOR

AM

OSCILLATOR

AM/FM

INDICATOR

AM/FM

SWITCH

AM

DETECTOR

STABILIZER

24

1 20 4 6 8 10 12

18
16

22
5

9
11
17

23

3

2 719

13

15

21

14

AM-IF

AGC

FM
AM

RFGND

AM/FM

IND

AF

AM-AGC/
FM-AFC

FM-OSC

V

P

RIPPLE

VSTAB

A

VSTAB

B

IFGND

AM-OSC

AM-RF

I

AM-IF1IAM-IF2

I/O

AM-MIXER SUBGND

TEA5710

TEA5710T

March 1994 4

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

PINNING

SYMBOL PIN DESCRIPTION

FM-RF

I

1 FM-RF aerial input (input impedance typ. 50 Ω)

AM-IF1

I

2 input from IFT or ceramic filter (input impedance typ. 3 kΩ)
AM-MIXER 3 open-collector output to IFT
FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω)
VSTAB

A

5 stabilized internal supply voltage (A)
FM-IF1

I

6 first FM-IF input (input impedance typ. 330 Ω)
AM-IF2

I/O

7 input/output to IFT; output: current source
FM-IF1

O

8 first FM-IF output (output impedance typ. 330 Ω)
VSTAB

B

9 stabilized internal supply voltage (B)
FM-IF2

I

10 second FM-IF input (input impedance typ. 330 Ω)
IFGND 11 ground of IF and detector stages
FM-DEM 12 ceramic discriminator pin
AF 13 audio output (output impedance typ. 5 kΩ)
AM/FM 14 switch terminal: open for AM; ground for FM
IND 15 field-strength dependent indicator
V

P

16 positive supply voltage
AM-OSC 17 parallel tuned AM-OSC circuit to ground
FM-OSC 18 parallel tuned FM-OSC circuit to ground
SUBGND 19 substrate and RF ground
FM-RF

O

20 parallel tuned FM-RF circuit to ground
AM-AGC/FM-AFC 21 AGC/AFC capacitor pin
RIPPLE 22 ripple capacitor pin
AM-RF

I

23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
RFGND 24 FM-RF ground

March 1994 5

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

Fig.2 Pin configuration TEA5710.

handbook, halfpage

TDA5710

MGE104

1
2
3
4
5
6
7
8

9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

FM-RF

I

AM-IF

I

AM-MIXER
FM-MIXER

VSTAB

A

FM-IF1

I

AM-IF2

I/O

FM-IF1

O

VSTAB

B

FM-IF2

I

IFGND

FM-DEM

RFGND
AM-RF

I

RIPPLE
AM-AGC/FM-AFC

SUBGND
FM-OSC

FM-RF

O

AM-OSC
V

P

IND
AM/FM
AF



Fig.3 Pin configuration TEA5710T.

handbook, halfpage

TDA5710T

MGE105

1
2
3
4
5
6
7
8

9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

FM-RF

I

AM-IF

I

AM-MIXER
FM-MIXER

VSTAB

A

FM-IF1

I

AM-IF2

I/O

FM-IF1

O

VSTAB

B

FM-IF2

I

IFGND

FM-DEM

RFGND
AM-RF

I

RIPPLE
AM-AGC/FM-AFC

SUBGND
FM-OSC

FM-RF

O

AM-OSC
V

P

IND
AM/FM
AF



FUNCTIONAL DESCRIPTION

The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.

The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.

The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.

The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator

output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.

March 1994 6

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134)

THERMAL RESISTANCE

CIRCUIT DESIGN DATA

SYMBOL PARAMETER MIN. MAX. UNIT

V

P

positive supply voltage 0 12 V

T

stg

storage temperature range −55 +150 °C

T

amb

operating ambient temperature range −15 +60 °C

T

j

junction temperature range −15 +150 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

from junction to ambient

for SDIL version TEA5710 69 K/W
for SO24L version TEA5710T 76 K/W

PIN NO. PIN SYMBOL

DC PIN VOLTAGE (V)

EQUIVALENT CIRCUIT

AM FM

1 FM-RF

I

− 0.73

2

AM-IF1

I

input

1.4 1.4

MGE114

220 Ω

20

24

1

MGE115

3 kΩ

2

5

11

March 1994 7

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

3

AM-MIXER

output

1.4 1.4

4

FM-MIXER

output

− 1.0

5 VSTAB

A

1.4 1.4

6

FM-IF

I

input

− 0.73

PIN NO. PIN SYMBOL

DC PIN VOLTAGE (V)

EQUIVALENT CIRCUIT

AM FM

MGE116

5

3

MGE117

680 Ω

4

MGE118

16
22

5

MGE119

2.7
kΩ

120 Ω

6

5

11

March 1994 8

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5710; TEA5710T

7

AM-IF2

I/O

input/output

1.4 1.4

8

FM-IF1

O

output

− 0.69

9 VSTAB

B

1.4 1.4

10

FM-IF2

I

input

− 0.73

11 IFGND 0 0

PIN NO. PIN SYMBOL

DC PIN VOLTAGE (V)

EQUIVALENT CIRCUIT

AM FM

MGE120

7

9

11

MGE121

560 Ω

9

8

MGE122

16
22

9

MGE123

2.2
kΩ

180 Ω

10

9

11