Philips TEA5710T, TEA5710 Datasheet
INTEGRATED CIRCUITS
DATA SH EET
TEA5710; TEA5710T
AM/FM radio receiver circuit
Product specification
File under Integrated Circuits, IC01
March 1994
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
FEATURES
• Wide supply voltage range: 2.0 to 12 V
• Low current consumption: 7.5 mA at AM, 9.0 mA at FM
• High selectivity with distributed IF gain
APPLICATIONS
• Portable AM/FM radio
• Clock radio
• Personal headphone radio
• LED driver for tuning indication
• High input sensitivity: 1.6 mV/m (AM), 2.0µV (FM) for 26
dB S/N
• Good strong signal behaviour: 10 V/m at AM, 500 mV at
FM
DESCRIPTION
The TEA5710 is a high performance Bimos IC for use in
AM/FM radios. All necessary functions are integrated:
from AM and FM front-end to detector output stages.
• Low output distortion: 0.8% at AM, 0.3% at FM
• Designed for simple and reliable PC-board layout
• High impedance MOSFET input on AM
QUICK REFERENCE DATA
Conditions AM: f
unless otherwise specified. Conditions FM: f
= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,
i
= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with
i
S1 in position B and S2 in position A, unless otherwise specified.
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
P
I
P
positive supply voltage 2.0 − 12 V
supply current
in AM mode 5.6 7.5 9.9 mA
in FM mode 7.3 9.0 11.2 mA
T
amb
operating ambient temperature range −15 −+60 °C
AM performance
V
in1
V
13
RF sensitivity 40 55 70 µV
AF output voltage 36 45 70 mV
THD total harmonic distortion − 0.8 2.0 %
FM performance
V
in3
V
13
RF sensitivity 1.0 2.0 3.8 µV
AF output voltage 47 58 69 mV
THD total harmonic distortion − 0.3 0.8 %
ORDERING INFORMATION
EXTENDED TYPE
NUMBER
PINS PIN POSITION MATERIAL CODE
PACKAGE
TEA5710 24 SDIL plastic SOT234AG
TEA5710T 24 SO24L plastic SOT137A
Notes
1. SOT234-1; 1996 August 27.
2. SOT137-1; 1996 August 27.
March 1994 2
(1)
(2)
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, full pagewidth
RFGND
FM-OSC
V
P
RIPPLE
VSTAB
A
VSTAB
B
IFGND
AM-OSC
AM-RF
I
FM-RFIFM-RF
1 20 4 6 8 10 12
24
18
16
22
5
9
11
17
23
FM
FRONT-END
STABILIZER
AM
FRONT-END
FM-MIXER
O
FM
MIXER
FM
OSCILLATOR
AM
OSCILLATOR
AM
MIXER
AM-MIXER SUBGND
FM-IF1IFM-RF1
3
FM-IF2
O
FM
IF 1
I
FM
IF 2
FM
TEA5710
TEA5710T
AM-IF
2 719
AM-IF1IAM-IF2
AM
AGC
I/O
FM-DEM
FM
DETECTOR
AM/FM
SWITCH
AM/FM
INDICATOR
AM
DETECTOR
14
21
15
13
AM/FM
AM-AGC/
FM-AFC
IND
AF
MGE106
Fig.1 Block diagram.
March 1994 3
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PINNING
SYMBOL PIN DESCRIPTION
FM-RF
I
AM-IF1
I
AM-MIXER 3 open-collector output to IFT
FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω)
VSTAB
FM-IF1
AM-IF2
FM-IF1
VSTAB
FM-IF2
A
I
I/O
O
B
I
IFGND 11 ground of IF and detector stages
FM-DEM 12 ceramic discriminator pin
AF 13 audio output (output impedance typ. 5 kΩ)
AM/FM 14 switch terminal: open for AM; ground for FM
IND 15 field-strength dependent indicator
V
P
AM-OSC 17 parallel tuned AM-OSC circuit to ground
FM-OSC 18 parallel tuned FM-OSC circuit to ground
SUBGND 19 substrate and RF ground
FM-RF
O
AM-AGC/FM-AFC 21 AGC/AFC capacitor pin
RIPPLE 22 ripple capacitor pin
AM-RF
I
RFGND 24 FM-RF ground
1 FM-RF aerial input (input impedance typ. 50 Ω)
2 input from IFT or ceramic filter (input impedance typ. 3 kΩ)
5 stabilized internal supply voltage (A)
6 first FM-IF input (input impedance typ. 330 Ω)
7 input/output to IFT; output: current source
8 first FM-IF output (output impedance typ. 330 Ω)
9 stabilized internal supply voltage (B)
10 second FM-IF input (input impedance typ. 330 Ω)
16 positive supply voltage
20 parallel tuned FM-RF circuit to ground
23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
March 1994 4
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, halfpage
AM-MIXER
FM-MIXER
VSTAB
AM-IF2
FM-IF1
VSTAB
FM-DEM
FM-RF
AM-IF
FM-IF1
FM-IF2
IFGND
I/O
1
I
2
I
3
4
5
A
6
I
TDA5710
7
8
O
9
B
10
I
11
12
MGE104
RFGND
24
AM-RF
23
RIPPLE
22
AM-AGC/FM-AFC
21
FM-RF
20
SUBGND
19
FM-OSC
18
AM-OSC
17
V
16
P
IND
15
AM/FM
14
AF
13
Fig.2 Pin configuration TEA5710.
handbook, halfpage
I
O
FM-RF
AM-IF
AM-MIXER
FM-MIXER
VSTAB
FM-IF1
AM-IF2
I/O
FM-IF1
VSTAB
FM-IF2
IFGND
FM-DEM
1
I
2
I
3
4
5
A
6
I
O
B
I
7
8
9
10
11
12
TDA5710T
MGE105
RFGND
24
AM-RF
23
RIPPLE
22
AM-AGC/FM-AFC
21
FM-RF
20
SUBGND
19
FM-OSC
18
AM-OSC
17
V
16
P
IND
15
AM/FM
14
AF
13
I
O
Fig.3 Pin configuration TEA5710T.
FUNCTIONAL DESCRIPTION
The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.
The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.
The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.
The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator
output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
March 1994 5
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER MIN. MAX. UNIT
V
P
T
stg
T
amb
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
R
th j-a
positive supply voltage 0 12 V
storage temperature range −55 +150 °C
operating ambient temperature range −15 +60 °C
junction temperature range −15 +150 °C
from junction to ambient
for SDIL version TEA5710 69 K/W
for SO24L version TEA5710T 76 K/W
CIRCUIT DESIGN DATA
PIN NO. PIN SYMBOL
1 FM-RF
2
AM-IF1
input
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
I
I
− 0.73
1.4 1.4
1
24
20
5
3 kΩ
2
220 Ω
MGE114
March 1994 6
11
MGE115
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
3
4
AM-MIXER
output
FM-MIXER
output
DC PIN VOLTAGE (V)
AM FM
1.4 1.4
− 1.0
EQUIVALENT CIRCUIT
3
5
MGE116
4
680 Ω
MGE117
5 VSTAB
6
FM-IF
input
16
A
I
1.4 1.4
− 0.73
22
5
5
120 Ω
6
2.7
kΩ
11
MGE118
MGE119
March 1994 7
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
7
AM-IF2
input/output
8
FM-IF1
output
I/O
O
DC PIN VOLTAGE (V)
AM FM
1.4 1.4
− 0.69
EQUIVALENT CIRCUIT
9
7
11
9
8
560 Ω
MGE121
MGE120
9 VSTAB
10
FM-IF2
input
B
I
1.4 1.4
− 0.73
11 IFGND 0 0
16
22
9
9
180 Ω
10
2.2
kΩ
11
MGE122
MGE123
March 1994 8
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