Philips tea5570 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

TEA5570

RF/IF circuit for AM/FM radio

Product specification
File under Integrated Circuits, IC01

September 1987

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

GENERAL DESCRIPTION

The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also
applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC
incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level
detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level
detector for mono/stereo switch information and/or indication complete the FM part.

Features

• Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or
level detector outputs)

• AM and FM gain control

• Low current consumption (I

• Low voltage operation (VP = 2,7 to 9 V)

• Ability to handle large AM signals; good i.f. suppression

• Applicable for inductive, capacitive and diode tuning

• Double smoothing of a.g.c. line

• Short-wave range up to 30 MHz

• Lumped or distributed i.f. selectivity with coil and/or ceramic filters

• AM and a.g.c. output voltage control

• Distribution of PCB wiring provides good frequency stability

• Economic design for 'AM only' receivers.

= 6 mA)

tot

QUICK REFERENCE DATA (at T

amb

= 25 °C)

Supply voltage V
Supply current I
AM performance (pin 2) for m = 0,3
Sensitivity

at V

= 10 mV V

o

at S/N = 26 dB V
A.F. output voltage at V
Total harmonic distortion at V

= 1 mV V

i

= 1 mV THD typ. 0,5 %

i

FM performance (pin 1) for ∆f = ± 22,5 kHz

limiting sensitivity, −3 dB V
Signal-to-noise ratio for V
A.F. output voltage at V
Total harmonic distortion at V
AM suppression at V

= 1 mV S/N typ. 65 dB

i

= 1 mV V

i

= 1 mV THD typ. 0,3 %

i

= 10 mV AMS typ. 50 dB

i

PACKAGE OUTLINE

16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25.

= V

P

7-16

7

i
i
o

i

o

typ. 5,4 V
typ. 6,2 mA

typ. 1,7 µV
typ. 16 µV
typ. 100 mV

typ. 110 µV

typ. 100 mV

September 1987 2

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September 1987 3

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Fig.1 Block diagram.

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage (pin 7) V

Voltage at pins 4, 5, 9 and 10 to pin 16 (ground) V
Voltage range at pin 8 V
Current into pin 5 I
Total power dissipation P
Storage temperature range T
Operating ambient temperature range T

5

= V

P
n-16
8-16

tot
stg
amb

7-16

max. 12 V
max. 12 V

VP± 0,5 V
max. 3 mA
see Fig.2

−55 to + 150 °C

−30 to + 85 °C

Fig.2 Power derating curve.

September 1987 4

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

D.C. CHARACTERISTICS

V

= 6 V; T

P

Supply (pin 7)
Supply voltage (note 1) V

Voltages

at pin 1 (FM) V
at pin 1; −I
at pins 2 and 3 (AM) V
at pin 6 V
at pin 11 V
at pin 13 V
at pin 14 V

Currents

Supply current I
Current supplied from pin 1 (FM) −I
Current supplied from pin 12 −I
Current supplied from pin 15 −I
Current into pin 4 (AM) I
Current into pin 5 (FM) (note 4) I
Current into pin 8 (AM) I
Current into pins 9, 10 (FM) I
Current into pin 14 I

Power consumption

= 25 °C; measured in Fig.10; unless otherwise specified

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

P

1-16

= 50 µA (FM) V

1

1-16
2,3-16
6-16
11-16
13-16
14-16

7

1
12

15
4
5
8
9,10
14

P − 40 − mW

= V

7-16

2,4 5,4 9,0 V

− 1,42 − V

− 1,28 − V

− 1,42 − V

− 0,7 − V

− 1,4 − V

− 0,7 − V

− 4,3 − V

4,2 6,2 8,2 mA

−−50 µA

−−20 µA

− 30 −µA

− 0,6 − mA

− 0,35 − mA

− 0,3 − mA

− 0,65 − mA

− 0,4 − mA

September 1987 5

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

A.C. CHARACTERISTICS
AM performance

= 6 V; T

V

P

|Z

| = v6/I4 = 2,7 kΩ; measured in Fig.10; unless otherwise specified

tr

R.F. sensitivity (pin 2)

at V

o

at S + N/N = 6 dB V
at S + N/N = 26 dB V

at S + N/N = 50 dB V
Signal handling (THD ≤ 10% at m = 0,8) V
A.F. output voltage at V
Total harmonic distortion

at Vi = 100 µV to 100 mV (m = 0,3) THD − 0,5 − %

at V

i

at V

i

I.F. suppression at V
Oscillator voltage (pin 8; note 3)

at f

osc

Indicator current (pin 12) at V

= 25 °C; r.f. condition: fi = 1 MHz, m = 0,3, fm = 1 kHz; transfer impedance of the i.f. filter

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

= 30 mV V

= 1 mV V

i

i
i
i
i
i
o

3,5 5,0 7,0 µV

− 1,3 µV

− 16 20 µV

− 1 − mV

200 −−mV
80 100 125 mV

= 2 mV (m = 0,8) THD − 1,0 2,5 %
= 200 mV (m = 0,8) THD − 4,0 10 %

= 30 mV (note 2) α 26 35 − dB

o

= 1455 kHz V

= 1 mV I

i

8-16

12

120 160 200 mV

− 200 230 µV

FM performance

V

= 6 V; T

P

|Z

| = v6/i5= 275 Ω; measured in Fig.10; unless otherwise specified

tr

= 25 °C; i.f. condition: fi= 10,7 MHz, ∆f = ± 22,5 kHz, fm= 1 kHz; transfer impedance of the i.f. filter

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

I.F. part

I.F. sensitivity (adjustable; note 4)
Input voltage

at −3 dB before limiting V

at S + N/N = 26 dB V

at S + N/N = 65 dB V
A.F. output voltage at V
Total harmonic distortion at V

= 1 mV V

i

= 1 mV THD − 0,3 − %

i

i
i
i
o

90 110 130 µV

− 6 −µV

− 1 − mV

80 100 125 mV

AM suppression (note 5) AMS − 50 − dB

September 1987 6