Philips SAA4998H Technical data

INTEGRATED CIRCUITS
DATA SH EET
SAA4998H
Field and line rate converter with noise reduction and embedded memory
Product specification 2004 Feb 18
Field and line rate converter with noise reduction and embedded memory
CONTENTS
1 FEATURES 2 GENERAL DESCRIPTION
2.1 Patent notice
2.2 Latch-up test 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAMS 6 PINNING 7 CONTROL REGISTER DESCRIPTION 8 LIMITING VALUES 9 THERMAL CHARACTERISTICS
SAA4998H
10 CHARACTERISTICS 11 PACKAGE OUTLINE 12 SOLDERING
12.1 Introduction to soldering surface mount packages
12.2 Reflow soldering
12.3 Wave soldering
12.4 Manual soldering
12.5 Suitability of surface mount IC packages for wave and reflow soldering methods
12.6 Additional soldering information
13 DATA SHEET STATUS 14 DEFINITIONS 15 DISCLAIMERS
2004 Feb 18 2
Philips Semiconductors Product specification
Field and line rate converter with noise reduction and embedded memory

1 FEATURES

Motion compensated framerateupconversion of all 1f film and video standards up to 292 active input lines per field:
– 50 Hz interlaced to 60 Hz progressive
{(60p mode for LCD and Plasma Display (PDP) TV}
– 50 Hz interlaced to 75 Hz interlaced
{75i mode for jumbo screens, Projection TV (PTV)}
– 50 Hz interlaced to 100 Hz interlaced
(high-end 100 Hz TV)
– 50 Hz interlaced to 50 Hz progressive
(progressive scan TV and LCD and PDP TV)
– 60 Hz interlaced to 60 Hz progressive
(progressive scan TV and LCD and PDP TV)
– 60 Hz interlaced to 90 Hz interlaced
(jumbo screens, PTV)
– 60 Hz interlaced to 120 Hz interlaced
(multistandard high-end 100 Hz TV)
480 active lines (NTSC like) or 506 active lines in 50 Hz interlaced to 60 Hz progressive mode
Motion compensated and Edge Dependent De-Interlacing (EDDI)
Motion estimated film mode detection
Motion compensated movie judder cancellation:
– 25 Hz 2 : 2 pull-down (PAL) to 60 Hz progressive or
75 Hz interlaced or 100 Hz interlaced or 50 Hz progressive
– 30 Hz2 : 2pull-down(NTSC)to60 Hzprogressiveor
90 Hz interlaced or 120 Hz interlaced
– 24 Hz3 : 2pull-down(NTSC)to60 Hzprogressiveor
90 Hz interlaced or 120 Hz interlaced
Variable vertical sharpness enhancement
High quality vertical zoom
Motion compensated temporal noise reduction with
after-imaging cancellation
Split screen demonstration mode
2 Mbaud serial interface (SNERT)
Embedded 2 × 2.9-Mbit DRAM
Full 8-bit accuracy
Memory buffer for Picture-In-Picture (PIP)
Lead-free package.
(1)
SAA4998H

2 GENERAL DESCRIPTION

The SAA4998H is a high performance video processor
H
featuring Natural Motion (PAL, NTSC and SECAM). It is used together with the picture improvement processor SAA4978H and SAA4979H.
The SAA4998H is an advanced versionof the SAA4993H. By embedding the fieldmemories it reducesthe part count oftherealized concept from 4 to 6 parts to only 2 partsand reduces the package size from a QFP160 to a QFP100.
The full FALCONIC mode uses full motion estimation and motion compensation on1/4pixel accuracy to perform
Frame rate upconversion
Film mode detection
Movie judder cancellation
Dynamic Noise Reduction (DNR)
Edge Dependent De-Interlacing (EDDI).
The motion compensated de-interlacer is improved with a new patented Edge Dependent De-Interlacing (EDDI) method. This avoids jagged edges of diagonal lines. The better de-interlacer leads to a significant better performance of progressive as well as interlaced output formats.
A 60 Hz progressive output frame rate can be generated for 50 Hz PAL sources to enable the use of 60 Hz LCD or PDP panels in PAL regions.
50 Hz interlaced to 75 Hz interlaced and 60 Hz interlaced to 90 Hz interlaced can be generated to achieve an increased number of lines and hence a reduction of line visibility for jumbo screens and PTV applications.
The embedded memory can be used to synchronize the main channel and the 2nd channel for PIP and double window applications. This avoids to add additional buffer memory devices to the application.
For demonstration purposes a split screen mode to show the Dynamic Noise Reduction (DNR) function, natural motion, and EDDI is available. The estimated motion vectors can be made visible by colour overlay mode.
The SAA4998H supports a Boundary Scan Test (BST) circuit in accordance with
(2)
, for all global TV standards
“IEEE Std. 1149.1”
.
(1) EDDI is protected with two patents of Koninklijke Philips
Electronics N.V.
2004 Feb 18 3
(2) Natural Motion is a trademark of Koninklijke Philips
Electronics N.V.
Philips Semiconductors Product specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory

2.1 Patent notice

Notice is herewith given that the subject integrated circuit uses one or more of the following US patents and that each of these patents may have corresponding patents in other jurisdictions.
US 4740842, US 5929919, US 6034734, US 5534946, US 5532750, US 5495300, US 5903680, US 5365280, US 5148269, US 5072293, US 5771074, and US 5302909.

3 QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V V V V V V I
DDD DDA DDM DDS DDE DDP
DD
core supply voltage (internal rail) 1.65 1.8 1.95 V analog supply voltage field memory supply voltage SRAM supply voltage external supply voltage (output pads) 3.0 3.3 3.6 V high supply voltage of internal field memories sum of supply current
at 1.8 V supply voltage pins 180 mA at 3.3 V supply voltage pins 6 mA
f
CLK
T
amb
operating clock frequency 32 33.3 MHz ambient temperature 0 70 °C

2.2 Latch-up test

Latch-up test in accordance with
“Latch-up Resistance
and Maximum Ratings Test; SNW-FQ-303
SAA4998H fulfils the requirements.
”; the

4 ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
SAA4998H QFP100 plastic quad flat package; 100 leads (lead length 1.95 mm);
body 14 × 20 × 2.8 mm
SOT317-2
2004 Feb 18 4
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2004 Feb 18 5

5 BLOCK DIAGRAMS

Philips Semiconductors Product specification
Field and line rate converter with noise
reduction and embedded memory
YA0 to YA7
VD
SNCL
SNDA
SNRST
ACV
RST
PIPON
TWOFMON
REA
REF
TCK
TDO
TDI
TMS
TRSTN
CLK32
55 to 62
94 41 34
SNERT
INTERFACE
33
25 32 36
50
CONTROL
63 64
IE
67
31 30 29
BST/TEST
28 27
83
DYNAMIC
NOISE
REDUCTION
MPR
LEFT
FIELD MEMORY 2
COMPRESS
MUX
MUX
DE-INTERLACER
WITH EDDI
vectors
SPM TPM ESM
MOTION ESTIMATOR
vectors
UPCONVERSION
MEMORY CONTROL
DECOMPRESS
MPR
RIGHT
FIELD MEMORY 3
VERTICAL
PEAKING
68, 69,
71 to 76
VERTICAL
ZOOM
95, 100,
SAA4998H
LUMINANCE PART
1, 2,
5 to 8
YF7 to YF0
YG7 to YG0
Fig.1 Block diagram luminance part in full FALCONIC mode.
coc001
SAA4998H
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2004 Feb 18 6
FIELD MEMORY 2 FIELD MEMORY 3
Philips Semiconductors Product specification
Field and line rate converter with noise
reduction and embedded memory
UVA0 to UVA7
42 to 47, 53, 54
DECOMPRESS/
REFORMAT
DNR
MPR LEFT
COMPRESS/
FORMAT
UPCONVERSION
vectors
DECOMPRESS/
REFORMAT
MPR
RIGHT
VERTICAL
ZOOM
78 to 81,
88, 89,
FORMAT
92, 93
9 to 13,
17 to 19
SAA4998H
CHROMINANCE PART
coc002
UVF7 to UVF0
UVG7 to UVG0
SAA4998H
Fig.2 Block diagram chrominance part in full FALCONIC mode.
Philips Semiconductors Product specification
Field and line rate converter with noise reduction and embedded memory

6 PINNING

SYMBOL PIN TYPE DESCRIPTION
YG5/DPIP5 1 output/input PIP mode disabled: bus G luminance output bit 5;
PIP mode enabled: PIP data input bit 5
YG4/DPIP4 2 output/input PIP mode disabled: bus G luminance output bit 4;
PIP mode enabled: PIP data input bit 4
V
DDE
V
SSE
YG3/DPIP3 5 output/input PIP mode disabled: bus G luminance output bit 3;
YG2/DPIP2 6 output/input PIP mode disabled: bus G luminance output bit 2;
YG1/DPIP1 7 output/input PIP mode disabled: bus G luminance output bit 1;
YG0/DPIP0 8 output/input PIP mode disabled: bus G luminance output bit 0 (LSB);
UVG7/QPIP7 9 output PIP mode disabled: bus G chrominance output bit 7 (MSB);
UVG6/QPIP6 10 output PIP mode disabled: bus G chrominance output bit 6;
UVG5/QPIP5 11 output PIP mode disabled: bus G chrominance output bit 5;
UVG4/QPIP4 12 output PIP mode disabled: bus G chrominance output bit 4;
UVG3/QPIP3 13 output PIP mode disabled: bus G chrominance output bit 3;
n.c./LLC 14 input PIP mode disabled: not connected;
V
SSE
n.c./SWCK2 16 input PIP mode disabled: not connected;
UVG2/QPIP2 17 output PIP mode disabled: bus G chrominance output bit 2;
UVG1/QPIP1 18 output PIP mode disabled: bus G chrominance output bit 1;
UVG0/QPIP0 19 output PIP mode disabled: bus G chrominance output bit 0 (LSB);
n.c./RSTW2 20 input PIP mode disabled: not connected;
n.c./OIE2 21 input PIP mode disabled: not connected;
n.c./IE2 22 input PIP mode disabled: not connected;
V
DDP
n.c./WE2 24 input PIP mode disabled: not connected;
3 supply supply voltage of output pads (3.3 V) 4 ground ground of output pads
PIP mode enabled: PIP data input bit 3
PIP mode enabled: PIP data input bit 2
PIP mode enabled: PIP data input bit 1
PIP mode enabled: PIP data input bit 0 (LSB)
PIP mode enabled: PIP data output bit 7 (MSB)
PIP mode enabled: PIP data output bit 6
PIP mode enabled: PIP data output bit 5
PIP mode enabled: PIP data output bit 4
PIP mode enabled: PIP data output bit 3
PIP mode enabled: line locked clock signal for PIP mode
15 ground ground of output pads
PIP mode enabled: serial write clock for PIP memory
PIP mode enabled: PIP data output bit 2
PIP mode enabled: PIP data output bit 1
PIP mode enabled: PIP data output bit 0 (LSB)
PIP mode enabled: write reset clock for PIP memory
PIP mode enabled: output enable for PIP memory output QPIPx
PIP mode enabled: input enable for PIP memory
23 supply high supply voltage of the internal field memories (3.3 V)
PIP mode enabled: write enable for PIP memory
(1)(2)(3)
SAA4998H
2004 Feb 18 7
Philips Semiconductors Product specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory
SYMBOL PIN TYPE DESCRIPTION
ACV/RE2 25 output/input PIP mode disabled: active video output;
PIP mode enabled: read enable for PIP memory
n.c./RSTR2 26 input PIP mode disabled: not connected;
PIP mode enabled: read reset for PIP memory TRSTN 27 input boundary scan test reset input (active LOW); with internal pull-up resistor TMS 28 input boundary scan test mode select input; with internal pull-up resistor TDI 29 input boundary scan test data input; with internal pull-up resistor TDO 30 3-state boundary scan test data output TCK 31 input boundary scan test clock input; with internal pull-up resistor RST 32 input reset input; see Fig.4 SNRST 33 input SNERT bus reset input; with internal pull-down resistor SNDA 34 input/output SNERT bus data input and output; with internal pull-down resistor V
DDE
35 supply supply voltage of output pads (3.3 V) PIPON 36 input PIP mode enable input V V V V
SSM DDM SSM DDM
37 ground field memory ground
38 supply supply voltage of the internal field memories (1.8 V)
39 ground field memory ground
40 supply supply voltage of the internal field memories (1.8 V) SNCL 41 input SNERT bus clock input; with internal pull-down resistor UVA0 42 input bus A chrominance input bit 0 (LSB) UVA1 43 input bus A chrominance input bit 1 UVA2 44 input bus A chrominance input bit 2 UVA3 45 input bus A chrominance input bit 3 UVA4 46 input bus A chrominance input bit 4 UVA5 47 input bus A chrominance input bit 5 V V
DDD SSD
48 supply core supply voltage (1.8 V)
49 ground core ground TWOFMON 50 input to be connected to ground V V
DDS SSS
51 supply supply voltage of the internal SRAMs (1.8 V)
52 ground ground of the internal SRAMs UVA6 53 input bus A chrominance input bit 6 UVA7 54 input bus A chrominance input bit 7 (MSB) YA0 55 input bus A luminance input bit 0 (LSB) YA1 56 input bus A luminance input bit 1 YA2 57 input bus A luminance input bit 2 YA3 58 input bus A luminance input bit 3 YA4 59 input bus A luminance input bit 4 YA5 60 input bus A luminance input bit 5 YA6 61 input bus A luminance input bit 6 YA7 62 input bus A luminance input bit 7 (MSB) REA 63 output read enable output for bus A
(1)(2)(3)
2004 Feb 18 8
Philips Semiconductors Product specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory
SYMBOL PIN TYPE DESCRIPTION
IE 64 input input enable for PIP mode V V
DDD SSD
65 supply core supply voltage (1.8 V)
66 ground core ground REF 67 input read enable input for bus F and G; note 4 YF7 68 output bus F luminance output bit 7 (MSB) YF6 69 output bus F luminance output bit 6 V
SSE
70 ground ground of output pads YF5 71 output bus F luminance output bit 5 YF4 72 output bus F luminance output bit 4 YF3 73 output bus F luminance output bit 3 YF2 74 output bus F luminance output bit 2 YF1 75 output bus F luminance output bit 1 YF0 76 output bus F luminance output bit 0 (LSB) V
DDE
77 supply supply voltage of output pads (3.3 V) UVF7 78 output bus F chrominance output bit 7 (MSB) UVF6 79 output bus F chrominance output bit 6 UVF5 80 output bus F chrominance output bit 5 UVF4 81 output bus F chrominance output bit 4 V
SSE
82 ground ground of output pads CLK32 83 input system clock input (32 MHz) V V V V
DDS SSS DDD SSD
84 supply supply voltage of the internal SRAMs (1.8 V)
85 ground ground of the internal SRAMs
86 supply core supply voltage (1.8 V)
87 ground core ground UVF3 88 output bus F chrominance output bit 3 UVF2 89 output bus F chrominance output bit 2 V V
SSA DDA
90 ground analog ground of the internal PLL
91 supply analog supply voltage of the internal PLL (1.8 V) UVF1 92 output bus F chrominance output bit 1 UVF0 93 output bus F chrominance output bit 0 (LSB) VD 94 input vertical display synchronization input (reset for field memories) YG7/DPIP7 95 output/input PIP mode disabled: bus G luminance output bit 7 (MSB);
PIP mode enabled: PIP data input bit 7 (MSB) V V
DDM SSM
96 supply supply voltage of the internal field memories (1.8 V) 97 ground field memory ground
(1)(2)(3)
2004 Feb 18 9
Philips Semiconductors Product specification
Field and line rate converter with noise reduction and embedded memory
SYMBOL PIN TYPE DESCRIPTION
V V
DDM SSM
98 supply supply voltage of the internal field memories (1.8 V) 99 ground field memory ground
YG6/DPIP6 100 output/input PIP mode disabled: bus G luminance output bit 6;
PIP mode enabled: PIP data input bit 6
Notes
1. Not used input pins should be connected to ground.
2. Because of the noisy characteristic of the supply voltage of output pads (V V
directly at the high supply voltageof the intern field memories (V
DDE
as possible to the device. V separated from V
by an external filter structure. Because of the high working frequency of the device, it is also
DDE
recommended to filter the core supply voltage (V
needs a low noise supply voltage, therefore, it is recommended that V
DDP
). All pins V
DDD
DDD
). All pins V
DDP
should be buffered as close as possible to the
device.
3. V
SSD
, V
SSM
and V
are connected internally.
SSS
4. REF rising edge must be after rising edge of SNRST in order to be detected.
(1)(2)(3)
), it is recommended not to connect
DDE
DDE
SAA4998H
should be buffered as close
has to be
DDP
2004 Feb 18 10
Philips Semiconductors Product specification
Field and line rate converter with noise reduction and embedded memory
SSMVDDMVSSMVDDM
YG6/DPIP6
YG5/DPIP5 YG4/DPIP4
V
DDE
V
SSE
YG3/DPIP3 YG2/DPIP2 YG1/DPIP1
YG0/DPIP0 UVG7/QPIP7 UVG6/QPIP6 UVG5/QPIP5 UVG4/QPIP4 UVG3/QPIP3
n.c./LLC
V
SSE
n.c./SWCK2 UVG2/QPIP2 UVG1/QPIP1 UVG0/QPIP0
n.c./RSTW2
n.c./OIE2
n.c./IE2
V
DDP
n.c./WE2
ACV/RE2
n.c./RSTR2
TRSTN
TMS
TDI
TDO
V
99989796959493929190898887
100
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
YG7/DPIP7VDUVF0
SAA4998H
UVF1
DDAVSSA
V
UVF2
UVF3
SSDVDDDVSSSVDDS
V
8685848382
SSE
CLK32
V
UVF4 81
SAA4998H
UVF5
80 79
UVF6
78
UVF7 V
77
DDE
76
YF0
75
YF1
74
YF2
73
YF3
72
YF4
71
YF5 V
70
SSE
69
YF6
68
YF7
67
REF V
66
SSD
V
65
DDD
64
IE
63
REA
62
YA7
61
YA6
60
YA5
59
YA4
58
YA3
57
YA2
56
YA1
55
YA0
54
UVA7
53
UVA6 V
52
SSS
51
V
DDS
31323334353637383940414243
DDE
SSM
SSM
TCK
RST
SNDA
SNRST
V
V
PIPON
DDM
V
V
Fig.3 Pin configuration.
2004 Feb 18 11
DDM
V
SNCL
UVA0
UVA1
44
UVA2
4546474849
DDD
V
UVA4
UVA5
V
UVA3
50
SSD
TWOFMON
001aaa057
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2004 Feb 18 12

7 CONTROL REGISTER DESCRIPTION

SNERT
NAME
DNR/peaking/colour Kstep10 010 write; S
Kstep0 XXXXset LUT value: k =1⁄16 if difference below (0to15) Kstep1 X X X X set LUT value: k =1⁄8 if difference below (0to15)
Kstep32 011 write; S
Kstep2 XXXXset LUT value: k =2⁄8 if difference below (0 to 30 in multiples of 2) Kstep3 X X X X set LUT value: k =3⁄8 if difference below (0 to 30 in multiples of 2)
Kstep54 012 write; S
Kstep4 XXXXset LUT value: k =4⁄8 if difference below (0 to 60 in multiples of 4) Kstep5 X X X X set LUT value: k =5⁄8 if difference below (0 to 60 in multiples of 4)
Kstep76 013 write; S
Kstep6 XXXXset LUT value: k =6⁄8 if difference below (0, 8, 16, 24, 32, 40, 48, 56,
Kstep7 X X X X set LUT value: k =7⁄8 if difference below (0, 8, 16, 24, 32, 40, 48, 56,
Gain_fix_y 014 write; S
FixvalY XXXXset fixed Y value; used when FixY = 1 or in left part of split screen
GainY X X X set gain in difference signal for adaptive DNRY (1⁄8,1⁄4,1⁄2, 1, 2 or 4) FixY X select fixed Y (adaptive or fixed) (full screen)
Gain_fix_uv 015 write; S
FixvalUV XXXXset fixed UV value; used when FixUV = 1 or in left part of split screen
GainUV X X X set gain in difference signal for adaptive DNR UV (1⁄8,1⁄4,1⁄2, 1, 2 or 4) FixUV X select fixed UV (adaptive or fixed) (full screen)
ADDRESS
(HEX)
READ/
WRITE
76543210 DESCRIPTION
(1)
64, 72, 80, 88, 96, 104, 112 or 120)
64, 72, 80, 88, 96, 104, 112 or 120)
(0,1⁄16to14⁄16or16⁄16)
(0,1⁄16to14⁄16or16⁄16)
(2)
Philips Semiconductors Product specification
Field and line rate converter with noise
reduction and embedded memory
SAA4998H
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