Field and line rate converter with
noise reduction and embedded
memory
Product specification2004 Feb 18
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
CONTENTS
1FEATURES
2GENERAL DESCRIPTION
2.1Patent notice
2.2Latch-up test
3QUICK REFERENCE DATA
4ORDERING INFORMATION
5BLOCK DIAGRAMS
6PINNING
7CONTROL REGISTER DESCRIPTION
8LIMITING VALUES
9THERMAL CHARACTERISTICS
SAA4998H
10CHARACTERISTICS
11PACKAGE OUTLINE
12SOLDERING
12.1Introduction to soldering surface mount
packages
12.2Reflow soldering
12.3Wave soldering
12.4Manual soldering
12.5Suitability of surface mount IC packages for
wave and reflow soldering methods
12.6Additional soldering information
13DATA SHEET STATUS
14DEFINITIONS
15DISCLAIMERS
2004 Feb 182
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
1FEATURES
• Motion compensated framerateupconversion of all 1f
film and video standards up to 292 active input lines per
field:
– 50 Hz interlaced to 60 Hz progressive
{(60p mode for LCD and Plasma Display (PDP) TV}
– 50 Hz interlaced to 75 Hz interlaced
{75i mode for jumbo screens, Projection TV (PTV)}
– 50 Hz interlaced to 100 Hz interlaced
(high-end 100 Hz TV)
– 50 Hz interlaced to 50 Hz progressive
(progressive scan TV and LCD and PDP TV)
– 60 Hz interlaced to 60 Hz progressive
(progressive scan TV and LCD and PDP TV)
– 60 Hz interlaced to 90 Hz interlaced
(jumbo screens, PTV)
– 60 Hz interlaced to 120 Hz interlaced
(multistandard high-end 100 Hz TV)
• 480 active lines (NTSC like) or 506 active lines in 50 Hz
interlaced to 60 Hz progressive mode
• Motion compensated and Edge Dependent
De-Interlacing (EDDI)
• Motion estimated film mode detection
• Motion compensated movie judder cancellation:
– 25 Hz 2 : 2 pull-down (PAL) to 60 Hz progressive or
75 Hz interlaced or 100 Hz interlaced or 50 Hz
progressive
– 30 Hz2 : 2pull-down(NTSC)to60 Hzprogressiveor
90 Hz interlaced or 120 Hz interlaced
– 24 Hz3 : 2pull-down(NTSC)to60 Hzprogressiveor
90 Hz interlaced or 120 Hz interlaced
• Variable vertical sharpness enhancement
• High quality vertical zoom
• Motion compensated temporal noise reduction with
after-imaging cancellation
• Split screen demonstration mode
• 2 Mbaud serial interface (SNERT)
• Embedded 2 × 2.9-Mbit DRAM
• Full 8-bit accuracy
• Memory buffer for Picture-In-Picture (PIP)
• Lead-free package.
(1)
SAA4998H
2GENERAL DESCRIPTION
The SAA4998H is a high performance video processor
H
featuring Natural Motion
(PAL, NTSC and SECAM). It is used together with the
picture improvement processor SAA4978H and
SAA4979H.
The SAA4998H is an advanced versionof the SAA4993H.
By embedding the fieldmemories it reducesthe part count
oftherealized concept from 4 to 6 parts to only 2 partsand
reduces the package size from a QFP160 to a QFP100.
The full FALCONIC mode uses full motion estimation and
motion compensation on1/4pixel accuracy to perform
• Frame rate upconversion
• Film mode detection
• Movie judder cancellation
• Dynamic Noise Reduction (DNR)
• Edge Dependent De-Interlacing (EDDI).
The motion compensated de-interlacer is improved with a
new patented Edge Dependent De-Interlacing (EDDI)
method. This avoids jagged edges of diagonal lines. The
better de-interlacer leads to a significant better
performance of progressive as well as interlaced output
formats.
A 60 Hz progressive output frame rate can be generated
for 50 Hz PAL sources to enable the use of 60 Hz LCD or
PDP panels in PAL regions.
50 Hz interlaced to 75 Hz interlaced and 60 Hz interlaced
to 90 Hz interlaced can be generated to achieve an
increased number of lines and hence a reduction of line
visibility for jumbo screens and PTV applications.
The embedded memory can be used to synchronize the
main channel and the 2nd channel for PIP and double
window applications. This avoids to add additional buffer
memory devices to the application.
For demonstration purposes a split screen mode to show
the Dynamic Noise Reduction (DNR) function, natural
motion, and EDDI is available. The estimated motion
vectors can be made visible by colour overlay mode.
The SAA4998H supports a Boundary Scan Test (BST)
circuit in accordance with
(2)
, for all global TV standards
“IEEE Std. 1149.1”
.
(1) EDDI is protected with two patents of Koninklijke Philips
Electronics N.V.
2004 Feb 183
(2) Natural Motion is a trademark of Koninklijke Philips
Electronics N.V.
Philips SemiconductorsProduct specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory
2.1Patent notice
Notice is herewith given that the subject integrated circuit
uses one or more of the following US patents and that
each of these patents may have corresponding patents in
other jurisdictions.
US 4740842, US 5929919, US 6034734, US 5534946,
US 5532750, US 5495300, US 5903680, US 5365280,
US 5148269, US 5072293, US 5771074, and
US 5302909.
3QUICK REFERENCE DATA
SYMBOLPARAMETERMIN.TYP.MAX.UNIT
V
V
V
V
V
V
I
DDD
DDA
DDM
DDS
DDE
DDP
DD
core supply voltage (internal rail)1.651.81.95V
analog supply voltage
field memory supply voltage
SRAM supply voltage
external supply voltage (output pads)3.03.33.6V
high supply voltage of internal field memories
sum of supply current
at 1.8 V supply voltage pins−180−mA
at 3.3 V supply voltage pins−6−mA
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2004 Feb 185
5BLOCK DIAGRAMS
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
YA0 to YA7
VD
SNCL
SNDA
SNRST
ACV
RST
PIPON
TWOFMON
REA
REF
TCK
TDO
TDI
TMS
TRSTN
CLK32
55 to 62
94
41
34
SNERT
INTERFACE
33
25
32
36
50
CONTROL
63
64
IE
67
31
30
29
BST/TEST
28
27
83
DYNAMIC
NOISE
REDUCTION
MPR
LEFT
FIELD MEMORY 2
COMPRESS
MUX
MUX
DE-INTERLACER
WITH EDDI
vectors
SPMTPMESM
MOTION ESTIMATOR
vectors
UPCONVERSION
MEMORY CONTROL
DECOMPRESS
MPR
RIGHT
FIELD MEMORY 3
VERTICAL
PEAKING
68, 69,
71 to 76
VERTICAL
ZOOM
95, 100,
SAA4998H
LUMINANCE PART
1, 2,
5 to 8
YF7 to YF0
YG7 to YG0
Fig.1 Block diagram luminance part in full FALCONIC mode.
coc001
SAA4998H
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2004 Feb 186
FIELD MEMORY 2FIELD MEMORY 3
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
UVA0 to UVA7
42 to 47,
53, 54
DECOMPRESS/
REFORMAT
DNR
MPR
LEFT
COMPRESS/
FORMAT
UPCONVERSION
vectors
DECOMPRESS/
REFORMAT
MPR
RIGHT
VERTICAL
ZOOM
78 to 81,
88, 89,
FORMAT
92, 93
9 to 13,
17 to 19
SAA4998H
CHROMINANCE PART
coc002
UVF7 to UVF0
UVG7 to UVG0
SAA4998H
Fig.2 Block diagram chrominance part in full FALCONIC mode.
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
6PINNING
SYMBOLPINTYPEDESCRIPTION
YG5/DPIP51output/inputPIP mode disabled: bus G luminance output bit 5;
PIP mode enabled: PIP data input bit 5
YG4/DPIP42output/inputPIP mode disabled: bus G luminance output bit 4;
PIP mode enabled: PIP data input bit 4
V
DDE
V
SSE
YG3/DPIP35output/inputPIP mode disabled: bus G luminance output bit 3;
YG2/DPIP26output/inputPIP mode disabled: bus G luminance output bit 2;
YG1/DPIP17output/inputPIP mode disabled: bus G luminance output bit 1;
YG0/DPIP08output/inputPIP mode disabled: bus G luminance output bit 0 (LSB);
UVG7/QPIP79outputPIP mode disabled: bus G chrominance output bit 7 (MSB);
UVG6/QPIP610outputPIP mode disabled: bus G chrominance output bit 6;
UVG5/QPIP511outputPIP mode disabled: bus G chrominance output bit 5;
UVG4/QPIP412outputPIP mode disabled: bus G chrominance output bit 4;
UVG3/QPIP313outputPIP mode disabled: bus G chrominance output bit 3;
n.c./LLC14inputPIP mode disabled: not connected;
V
SSE
n.c./SWCK216inputPIP mode disabled: not connected;
UVG2/QPIP217outputPIP mode disabled: bus G chrominance output bit 2;
UVG1/QPIP118outputPIP mode disabled: bus G chrominance output bit 1;
UVG0/QPIP019outputPIP mode disabled: bus G chrominance output bit 0 (LSB);
n.c./RSTW220inputPIP mode disabled: not connected;
n.c./OIE221inputPIP mode disabled: not connected;
n.c./IE222inputPIP mode disabled: not connected;
V
DDP
n.c./WE224inputPIP mode disabled: not connected;
3supplysupply voltage of output pads (3.3 V)
4groundground of output pads
PIP mode enabled: PIP data input bit 3
PIP mode enabled: PIP data input bit 2
PIP mode enabled: PIP data input bit 1
PIP mode enabled: PIP data input bit 0 (LSB)
PIP mode enabled: PIP data output bit 7 (MSB)
PIP mode enabled: PIP data output bit 6
PIP mode enabled: PIP data output bit 5
PIP mode enabled: PIP data output bit 4
PIP mode enabled: PIP data output bit 3
PIP mode enabled: line locked clock signal for PIP mode
15groundground of output pads
PIP mode enabled: serial write clock for PIP memory
PIP mode enabled: PIP data output bit 2
PIP mode enabled: PIP data output bit 1
PIP mode enabled: PIP data output bit 0 (LSB)
PIP mode enabled: write reset clock for PIP memory
PIP mode enabled: output enable for PIP memory output QPIPx
PIP mode enabled: input enable for PIP memory
23supplyhigh supply voltage of the internal field memories (3.3 V)
PIP mode enabled: write enable for PIP memory
(1)(2)(3)
SAA4998H
2004 Feb 187
Philips SemiconductorsProduct specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory
SYMBOLPINTYPEDESCRIPTION
ACV/RE225output/inputPIP mode disabled: active video output;
PIP mode enabled: read enable for PIP memory
n.c./RSTR226inputPIP mode disabled: not connected;
PIP mode enabled: read reset for PIP memory
TRSTN27inputboundary scan test reset input (active LOW); with internal pull-up resistor
TMS28inputboundary scan test mode select input; with internal pull-up resistor
TDI29inputboundary scan test data input; with internal pull-up resistor
TDO303-stateboundary scan test data output
TCK31inputboundary scan test clock input; with internal pull-up resistor
RST32inputreset input; see Fig.4
SNRST33inputSNERT bus reset input; with internal pull-down resistor
SNDA34input/outputSNERT bus data input and output; with internal pull-down resistor
V
DDE
35supplysupply voltage of output pads (3.3 V)
PIPON36inputPIP mode enable input
V
V
V
V
SSM
DDM
SSM
DDM
37groundfield memory ground
38supplysupply voltage of the internal field memories (1.8 V)
39groundfield memory ground
40supplysupply voltage of the internal field memories (1.8 V)
SNCL41inputSNERT bus clock input; with internal pull-down resistor
UVA042inputbus A chrominance input bit 0 (LSB)
UVA143inputbus A chrominance input bit 1
UVA244inputbus A chrominance input bit 2
UVA345inputbus A chrominance input bit 3
UVA446inputbus A chrominance input bit 4
UVA547inputbus A chrominance input bit 5
V
V
DDD
SSD
48supplycore supply voltage (1.8 V)
49groundcore ground
TWOFMON50inputto be connected to ground
V
V
DDS
SSS
51supplysupply voltage of the internal SRAMs (1.8 V)
52groundground of the internal SRAMs
UVA653inputbus A chrominance input bit 6
UVA754inputbus A chrominance input bit 7 (MSB)
YA055inputbus A luminance input bit 0 (LSB)
YA156inputbus A luminance input bit 1
YA257inputbus A luminance input bit 2
YA358inputbus A luminance input bit 3
YA459inputbus A luminance input bit 4
YA560inputbus A luminance input bit 5
YA661inputbus A luminance input bit 6
YA762inputbus A luminance input bit 7 (MSB)
REA63outputread enable output for bus A
(1)(2)(3)
2004 Feb 188
Philips SemiconductorsProduct specification
Field and line rate converter with noise
SAA4998H
reduction and embedded memory
SYMBOLPINTYPEDESCRIPTION
IE64inputinput enable for PIP mode
V
V
DDD
SSD
65supplycore supply voltage (1.8 V)
66groundcore ground
REF67inputread enable input for bus F and G; note 4
YF768outputbus F luminance output bit 7 (MSB)
YF669outputbus F luminance output bit 6
V
SSE
70groundground of output pads
YF571outputbus F luminance output bit 5
YF472outputbus F luminance output bit 4
YF373outputbus F luminance output bit 3
YF274outputbus F luminance output bit 2
YF175outputbus F luminance output bit 1
YF076outputbus F luminance output bit 0 (LSB)
V
DDE
77supplysupply voltage of output pads (3.3 V)
UVF778outputbus F chrominance output bit 7 (MSB)
UVF679outputbus F chrominance output bit 6
UVF580outputbus F chrominance output bit 5
UVF481outputbus F chrominance output bit 4
V
SSE
82groundground of output pads
CLK3283inputsystem clock input (32 MHz)
V
V
V
V
DDS
SSS
DDD
SSD
84supplysupply voltage of the internal SRAMs (1.8 V)
85groundground of the internal SRAMs
86supplycore supply voltage (1.8 V)
87groundcore ground
UVF388outputbus F chrominance output bit 3
UVF289outputbus F chrominance output bit 2
V
V
SSA
DDA
90groundanalog ground of the internal PLL
91supplyanalog supply voltage of the internal PLL (1.8 V)
UVF192outputbus F chrominance output bit 1
UVF093outputbus F chrominance output bit 0 (LSB)
VD94inputvertical display synchronization input (reset for field memories)
YG7/DPIP795output/inputPIP mode disabled: bus G luminance output bit 7 (MSB);
PIP mode enabled: PIP data input bit 7 (MSB)
V
V
DDM
SSM
96supplysupply voltage of the internal field memories (1.8 V)
97groundfield memory ground
(1)(2)(3)
2004 Feb 189
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
SYMBOLPINTYPEDESCRIPTION
V
V
DDM
SSM
98supplysupply voltage of the internal field memories (1.8 V)
99groundfield memory ground
YG6/DPIP6100output/inputPIP mode disabled: bus G luminance output bit 6;
PIP mode enabled: PIP data input bit 6
Notes
1. Not used input pins should be connected to ground.
2. Because of the noisy characteristic of the supply voltage of output pads (V
V
directly at the high supply voltageof the intern field memories (V
DDE
as possible to the device. V
separated from V
by an external filter structure. Because of the high working frequency of the device, it is also
DDE
recommended to filter the core supply voltage (V
needs a low noise supply voltage, therefore, it is recommended that V
DDP
). All pins V
DDD
DDD
). All pins V
DDP
should be buffered as close as possible to the
device.
3. V
SSD
, V
SSM
and V
are connected internally.
SSS
4. REF rising edge must be after rising edge of SNRST in order to be detected.
(1)(2)(3)
), it is recommended not to connect
DDE
DDE
SAA4998H
should be buffered as close
has to be
DDP
2004 Feb 1810
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
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2004 Feb 1812
7CONTROL REGISTER DESCRIPTION
SNERT
NAME
DNR/peaking/colour
Kstep10010write; S
Kstep0XXXXset LUT value: k =1⁄16 if difference below (0to15)
Kstep1X X X Xset LUT value: k =1⁄8 if difference below (0to15)
Kstep32011write; S
Kstep2XXXXset LUT value: k =2⁄8 if difference below (0 to 30 in multiples of 2)
Kstep3X X X Xset LUT value: k =3⁄8 if difference below (0 to 30 in multiples of 2)
Kstep54012write; S
Kstep4XXXXset LUT value: k =4⁄8 if difference below (0 to 60 in multiples of 4)
Kstep5X X X Xset LUT value: k =5⁄8 if difference below (0 to 60 in multiples of 4)
Kstep76013write; S
Kstep6XXXXset LUT value: k =6⁄8 if difference below (0, 8, 16, 24, 32, 40, 48, 56,
Kstep7X X X Xset LUT value: k =7⁄8 if difference below (0, 8, 16, 24, 32, 40, 48, 56,
Gain_fix_y014write; S
FixvalYXXXXset fixed Y value; used when FixY = 1 or in left part of split screen
GainYX X Xset gain in difference signal for adaptive DNRY (1⁄8,1⁄4,1⁄2, 1, 2 or 4)
FixYXselect fixed Y (adaptive or fixed) (full screen)
Gain_fix_uv015write; S
FixvalUVXXXXset fixed UV value; used when FixUV = 1 or in left part of split screen
GainUVX X Xset gain in difference signal for adaptive DNR UV (1⁄8,1⁄4,1⁄2, 1, 2 or 4)
FixUVXselect fixed UV (adaptive or fixed) (full screen)
ADDRESS
(HEX)
READ/
WRITE
76543210DESCRIPTION
(1)
64, 72, 80, 88, 96, 104, 112 or 120)
64, 72, 80, 88, 96, 104, 112 or 120)
(0,1⁄16to14⁄16or16⁄16)
(0,1⁄16to14⁄16or16⁄16)
(2)
Philips SemiconductorsProduct specification
Field and line rate converter with noise
reduction and embedded memory
SAA4998H
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