Philips Semiconductors |
Product specification |
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256-bit TTL bipolar PROM (32 x 8) |
82S23/82S123 |
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DESCRIPTION
The 82S23 and 82S123 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The 82S23 and 82S123 devices are supplied with all outputs at logical Low. Outputs are programmed to a logic High level at any specified address by fusing the Ni-Cr link matrix.
FEATURES
•Address access time: 50ns max
•Power dissipation: 1.3mW/bit typ
•Input loading: ±100μA max
•On-chip address decoding
•One Chip Enable input
•Output options:
±N82S23: Open Collector
±N82S123: 3-State
These devices include on-chip decoding and 1 Chip Enable input for memory expansion. They feature either Open Collector or 3-State outputs for optimization of word expansion in bused organizations.
Ordering information can be found on the following page.
The 82S23 and 82S123 devices are also processed to military requirements for operation over the military temperature range. For specifications and ordering information, consult the Signetics Military Data Handbook.
BLOCK DIAGRAM
•No separate fusing pins
•Unprogrammed outputs are Low level
•Fully TTL compatible
APPLICATIONS
•Prototyping/volume production
•Sequential controllers
•Format conversion
•Hardwired algorithms
•Random logic
•Code conversion
A0 |
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ADDRESS |
1:32 |
32 × 8 MATRIX |
LINES |
DECODER |
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A4 |
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CE |
8 OUTPUT DRIVERS |
O1 O2 O3 O4 O5 O6 O7 O8
OUTPUT LINES
PIN CONFIGURATIONS
N Package
O1 |
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1 |
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16 |
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VCC |
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O2 |
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2 |
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15 |
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CE |
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O3 |
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A4 |
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3 |
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14 |
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O4 |
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A3 |
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4 |
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13 |
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O5 |
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A2 |
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5 |
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12 |
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O6 |
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A1 |
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6 |
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11 |
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O7 |
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A0 |
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7 |
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10 |
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GND |
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O8 |
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8 |
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9 |
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A Package
O2 O1 NC VCC CE
3 2
1
20
19
O3 |
4 |
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18 |
A4 |
O4 |
5 |
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17 |
A3 |
NC |
6 |
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16 |
NC |
O5 |
7 |
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15 |
A2 |
O6 |
8 |
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14 |
A1 |
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9 |
10 |
11 |
12 |
13 |
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O7 GND NC O8 |
A0 |
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November 11, 1986 |
1 |
853-0154 86487 |