Philips LXE18300X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LXE18300X
NPN microwave power transistor
Product specification
Supersedes data of January 1992
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LXE18300X
FEATURES
• Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits
• Diffused emitter ballasting resistors
provide excellent current sharing
and withstanding at a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Intended for use in common emitter
class AB power amplifiers for military
and professional applications at
frequencies from 1.6 to 1.85 GHz, in
CW conditions.
DESCRIPTION
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATION
f
(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
Class AB (CW) 1.85 24 0.3 ≥27 ≥8
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
ok, 4 columns
Top view
1
c
b
33
2
MAM045
e
G
PO
(dB)
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with emitter connected to
Fig.1 Simplified outline and symbol.
flange.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LXE18300X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current − 6A
total power dissipation Tmb=75°C − 57 W
storage temperature range −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
10
I
C
(A)
1
−1
10
10−2
110
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(1)
Fig.2 DC SOAR.
VCE (V)
MRA433
102
Tmb (
MRA442
o
100
handbook, halfpage
P
tot
(W)
80
60
40
20
0
0 50 100 150
P
=57W.
tot max
Fig.3 Maximum power dissipation derating as a
function of mounting base temperature.
200
C)
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 3
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