Philips LXE16350X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LXE16350X
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor LXE16350X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATIONS
Common emitter class AB power
amplifiers for military and
professional applications at
1.65 GHz.
DESCRIPTION
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I
(A)
CQ
P
L1
(W)
G
po
(dB)
Zi; Z
(Ω)
L
Class AB (CW) 1.65 24 0.3 ≥32 ≥9 see Figs 8 and 9
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
ndbook, 4 columns
Top view
1
c
b
33
2
MAM045
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic package,
Fig.1 Simplified outline and symbol.
with emitter connected to flange.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor LXE16350X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) − 6A
total power dissipation Tmb=75°C − 57 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
110
Tmb≤ 75°C.
(1) Region of permissible DC operation.
Fig.2 DC SOAR.
(1)
V
(V)
CE
MRA441
102
Tmb (
MRA442
o
100
handbook, halfpage
P
tot
(W)
80
60
40
20
0
0 50 100 150
P
=57W.
tot max
Fig.3 Maximum power dissipation derating as a
function of mounting base temperature.
200
C)
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor LXE16350X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CER
I
CEO
I
EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 1.7 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
.
collector cut-off current VCB= 20 V; IE=0 − 3mA
=40V; IE=0 − 30 mA
V
CB
collector cut-off current VCE=30V; RBE= 220 Ω− 30 mA
collector cut-off current VCE=20V; IB=0 − 30 mA
emitter cut-off current VEB= 1.5 V; IC=0 − 300 µA
DC current gain VCE=3V; IC= 3 A 15 100
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.65 24 0.3 ≥32
=25°C in a common-emitter class AB amplifier (note 1).
mb
V
CE
(V)
I
CQ
(A)
P
L1
(W)
typ. 35
G
po
(dB)
≥9
typ. 10
Zi; Z
(Ω)
see Figs 8 and 9
Note
1. The test circuit is split into 2 independent halves each being 30 × 40 mm in size.
List of components (see Fig 4).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L1 5 turns 0.5 mm diameter copper
int. dia. 2 mm
wire with ferrite bead
L2 5 turns 0.5 mm diameter copper
int. dia. 2 mm
wire
C1, C4 DC blocking chip capacitor 100 pF
C2, C3 trimmer capacitor 0.5 to 5 pF Tekelec
C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003
L
1997 Feb 19 4
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