Philips LFE15600X Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

LFE15600X

NPN microwave power transistor

Product specification			1997 Feb 19
Supersedes data of January 1994

Philips Semiconductors	Product specification
NPN microwave power transistor	LFE15600X

FEATURES

·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

·Interdigitated structure provides high emitter efficiency

·Gold metallization realizes very good stability of the characteristics and excellent lifetime

·Multicell geometry gives good balance of dissipated power and low thermal resistance

·Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATIONS

Common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA

Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

MODE OF	f		VCE	ICQ		PL1	Gpo	hC	Zi/ZL
OPERATION	(GHz)		(V)	(A)		(W)	(dB)	(%)	(W)
Class AB (CW)	1.5		24	0.2		³55	³8	typ.50	see Figs 7
									and 8
PINNING - SOT448A
PIN					DESCRIPTION
1	collector
2	base
3	emitter connected to flange

ook, 4 columns	1
		c
		b
	3	3
		e
	2	MAM045

Top view

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19

2

Philips Semiconductors			Product specification
NPN microwave power transistor			LFE15600X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	45	V
VCER	collector-emitter voltage	RBE = 56 Ω	−	30	V
VCEO	collector-emitter voltage	open base	−	22	V
VEBO	emitter-base voltage	open collector	−	3	V
IC	DC collector current		−	12	A
Pi	input power	f = 1.5 GHz; VCE = 24 V; class AB	−	20	W
Ptot	total power dissipation	Tmb = 75 °C	−	80	W
Tstg	storage temperature		−65	+200	°C
Tj	junction temperature		−	200	°C
Tsld	soldering temperature	t ≤ 10 s; note 1	−	235	°C

Note

1. Up to 0.2 mm from ceramic.

120					MBD390
Ptot
(W)
80
40
0
0	100	T mb (	o	C)	200

Fig.2 Power derating curve.

1997 Feb 19

3

Philips Semiconductors			Product specification
NPN microwave power transistor			LFE15600X
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
Rth j-mb	thermal resistance from junction to mounting base	Tj = 100 °C	1.2	K/W
Rth mb-h	thermal resistance from mounting base to heatsink	note 1	0.2	K/W

Note

1. See “Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

Tmb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 20 V	-	6	mA
V(BR)CER	collector-emitter breakdown voltage	IC = 30 mA; RBE = 56 W	30	-	V
V(BR)CBO	collector-base breakdown voltage	IC = 30 mA	45	-	V
V(BR)EBO	emitter-base breakdown voltage	IE = 30 mA	3	-	V
hFE	DC current gain	IC = 1 A; VCE = 5 V	15	100

APPLICATION INFORMATION

Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

	MODE OF OPERATION	f	VCE	ICQ	PL1	Gpo	hC	Zi/ZL
		(GHz)	(V)	(A)	(W)	(dB)	(%)	(W)
	Class AB (CW)	1.5	24	0.2	³55	³8	typ. 50	see Figs 7
					typ. 60	typ. 8.5		and 8

1997 Feb 19

4