Philips LFE15600X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LFE15600X
NPN microwave power transistor
Product specification
Supersedes data of January 1994
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor LFE15600X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATIONS
Common emitter, class AB amplifiers
in CW conditions for professional
applications between 1.5 GHz and
1.7 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I
(A)
CQ
P
L1
(W)
G
po
(dB)
η
(%)
C
Zi/Z
(Ω)
Class AB (CW) 1.5 24 0.2 ≥55 ≥8 typ.50 see Figs 7
and 8
PINNING - SOT448A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
ook, 4 columns
Top view
1
c
b
33
2
MAM045
e
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor LFE15600X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE=56Ω−30 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
DC collector current − 12 A
input power f = 1.5 GHz; VCE= 24 V; class AB − 20 W
total power dissipation Tmb=75°C − 80 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
P
(W)
120
tot
80
40
0
0
Fig.2 Power derating curve.
MBD390
100 200
o
T ( C)
mb
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor LFE15600X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 1.2 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
“Mounting recommendations in the General part of handbook SC19a”
.
collector cut-off current IE= 0; VCB=20V − 6mA
collector-emitter breakdown voltage IC= 30 mA; RBE=56Ω 30 − V
collector-base breakdown voltage IC=30mA 45 − V
emitter-base breakdown voltage IE=30mA 3 − V
DC current gain IC= 1 A; VCE= 5 V 15 100
APPLICATION INFORMATION
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class AB amplifier.
mb
f
(GHz)
V
(V)
CE
I
CQ
(A)
Class AB (CW) 1.5 24 0.2 ≥55
P
L1
(W)
typ. 60
G
po
(dB)
≥8
typ. 8.5
η
(%)
C
Zi/Z
(Ω)
L
typ. 50 see Figs 7
and 8
1997 Feb 19 4
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