Philips BC337 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC337
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15
Philips Semiconductors Product specification
NPN general purpose transistor BC337
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
handbook, halfpage
1
2
3
2
PNP complement: BC327.
MAM182
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN general purpose transistor BC337
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 0.2 K/mW
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB= 20 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 100 mA; VCE=1V;
BC337 100 − 600
see Figs 2, 3 and 4
BC337-16 100 − 250
BC337-25 160 − 400
BC337-40 250 − 600
DC current gain I
= 500 mA; VCE=1V;
C
40 −−
see Figs 2, 3 and 4
collector-emitter saturation
IC= 500 mA; IB=50mA −−700 mV
voltage
base-emitter voltage IC= 500 mA; VCE= 1 V; note 1 −−1.2 V
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
Note
1. V
decreases by about 2 mV/K with increasing temperature.
BE
1999 Apr 15 3
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