Philips BC307B, BC307 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D186
BC307; BC307B
PNP general purpose transistors
Product specification
File under Discrete Semiconductors, SC04
1997 Mar 07
Philips Semiconductors Product specification
PNP general purpose transistors BC307; BC307B
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC237 and BC237B.
handbook, halfpage
1
2
3
MAM281
3
2
1
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
CBO
CEO
CM
tot
FE
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
peak collector current −−200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= −2 mA; VCE= −5V
BC307 125 455
BC307B 222 455
f
T
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz
1997 Mar 07 2
Philips Semiconductors Product specification
PNP general purpose transistors BC307; BC307B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 07 3
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