Philips BC161, BC160 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D110
BC160; BC161
PNP medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
Philips Semiconductors Product specification
PNP medium power transistors BC160; BC161
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General purpose applications.
DESCRIPTION
handbook, halfpage
1
2
3
PNP medium power transistor in a TO-39 metal package.
MAM334
2
1
NPN complements: BC140 and BC141.
3
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC160 −−−40 V
BC161 −−−60 V
V
CES
collector-emitter voltage open base
BC160 −−−40 V
BC161 −−−60 V
I
P
h
CM
tot
FE
peak collector current −−−1.5 A
total power dissipation T
≤ 45 °C −−3.7 W
case
DC current gain IC= −100 mA; VCE= −1V
BC160-10; BC161-10 63 100 160
BC160-16; BC161-16 100 160 250
f
T
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 50 −−MHz
1997 May 12 2
Philips Semiconductors Product specification
PNP medium power transistors BC160; BC161
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BC160 −−40 V
BC161 −−60 V
collector-emitter voltage open base
BC160 −−40 V
BC161 −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−1.5 A
peak base current −−200 mA
total power dissipation T
≤ 45 °C − 3.7 W
case
storage temperature −65 +150 °C
junction temperature − 175 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 35 K/W
1997 May 12 3
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