Philips BC109, BC108, BC107 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
1997 Sep 03
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN general purpose transistors BC107; BC108; BC109
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to the case
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
handbook, halfpage
1
3
2
2
MAM264
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC107 − 50 V
BC108; BC109 − 30 V
V
CEO
collector-emitter voltage open base
BC107 − 45 V
BC108; BC109 − 20 V
I
P
h
CM
tot
FE
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 300 mW
amb
DC current gain IC= 2 mA; VCE=5V
BC107 110 450
BC108 110 800
BC109 200 800
f
T
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 − MHz
1997 Sep 03 2
Philips Semiconductors Product specification
NPN general purpose transistors BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BC107 − 50 V
BC108; BC109 − 30 V
collector-emitter voltage open base
BC107 − 45 V
BC108; BC109 − 20 V
emitter-base voltage open collector
BC107 − 6V
BC108; BC109 − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 175 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient note 1 0.5 K/mW
thermal resistance from junction to case 0.2 K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 03 3
Loading...