Philips 74HC04, 74HCT04 Technical data

74HC04

INTEGRATED CIRCUITS

DATA SHEET

74HC04; 74HCT04

Hex inverter

Product specification			2003 Jul 23
Supersedes data of 1993 Sep 01

Philips Semiconductors	Product specification
Hex inverter	74HC04; 74HCT04

FEATURES

∙Complies with JEDEC standard no. 8-1A

∙ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.

∙Specified from −40 to +85 °C and −40 to +125 °C.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

DESCRIPTION

The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

HC04

HCT04

tPHL/tPLH

propagation delay nA to nY

CL = 15 pF; VCC = 5 V

7

8

ns

CI

input capacitance

3.5

3.5

pF

CPD

power dissipation capacitance per gate

notes 1 and 2

21

24

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in μW).

P = C

× V

2

× f

× N + Σ(C

× V

2

× f

) where:

D

PD

CC

i

L

CC

o

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

Σ(C

L

× V

2

× f

) = sum of the outputs.

CC

o

2. For 74HC04: the condition is VI = GND to VCC.

For 74HCT04: the condition is VI = GND to VCC − 1.5 V.

FUNCTION TABLE

See note 1.

INPUT

OUTPUT

nA

nY

L

H

H

L

Note

1. H = HIGH voltage level; L = LOW voltage level.

2003 Jul 23

2

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

TEMPERATURE RANGE

PINS

PACKAGE

MATERIAL

CODE

74HC04N

−40 to +125 °C

14

DIP14

plastic

SOT27-1

74HCT04N

−40 to +125 °C

14

DIP14

plastic

SOT27-1

74HC04D

−40 to +125 °C

14

SO14

plastic

SOT108-1

74HCT04D

−40 to +125 °C

14

SO14

plastic

SOT108-1

74HC04DB

−40 to +125 °C

14

SSOP14

plastic

SOT337-1

74HCT04DB

−40 to +125 °C

14

SSOP14

plastic

SOT337-1

74HC04PW

−40 to +125 °C

14

TSSOP14

plastic

SOT402-1

74HCT04PW

−40 to +125 °C

14

TSSOP14

plastic

SOT402-1

74HC04BQ

−40 to +125 °C

14

DHVQFN14

plastic

SOT762-1

74HCT04BQ

−40 to +125 °C

14

DHVQFN14

plastic

SOT762-1

PINNING

PIN

SYMBOL

DESCRIPTION

1

1A

data input

2

1Y

data output

handbook, halfpage

3

2A

data input

1A

1

14

VCC

4

2Y

data output

1Y

2

13

6A

5

3A

data input

2A

3

12

6Y

6

3Y

data output

2Y

4

04

11

5A

7

GND

ground (0 V)

3A

5

10

5Y

8

4Y

data output

3Y

6

9

4A

9

4A

data input

8

GND

7

4Y

10

5Y

data output

11

5A

data input

MNA340

12

6Y

data output

13

6A

data input

Fig.1

Pin configuration DIP14, SO14 and

14

VCC

supply voltage

(T)SSOP14.

2003 Jul 23

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Philips Semiconductors	Product specification
Hex inverter	74HC04; 74HCT04

handbook, halfpage		1A	VCC
		1	14
1Y	2			13	6A
2A	3			12	6Y
2Y	4	GND(1)		11	5A
3A	5			10	5Y
3Y	6			9	4A
		7	8
	Top view	GND	4Y	MBL760

(1)The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.

Fig.2 Pin configuration DHVQFN14.

1	1A	1Y	2
3	2A	2Y	4
5	3A	3Y	6
9	4A	4Y	8
11	5A	5Y	10
13	6A	6Y	12
		MNA342

Fig.3 Logic symbol.

1	1
	2
3	1
	4
5	1
	6
	handbook, halfpage	Y
	A
9	1
	8	MNA341
11	1
	10
13	1
	12
	MNA343

Fig.4 IEC logic symbol.

Fig.5 Logic diagram (one inverter).

2003 Jul 23

4

Philips Semiconductors

Product specification

Hex inverter

74HC04; 74HCT04

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

CONDITIONS

74HC04

74HCT04

UNIT

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

VCC

supply voltage

2.0

5.0

6.0

4.5

5.0

5.5

V

VI

input voltage

0

−

VCC

0

−

VCC

V

VO

output voltage

0

−

VCC

0

−

VCC

V

Tamb

ambient temperature

see DC and AC

−40

+25

+125

−40

+25

+125

°C

characteristics per

device

tr, tf

input rise and fall times

VCC = 2.0 V

−

−

1000

−

−

−

ns

VCC = 4.5 V

−

6.0

500

−

6.0

500

ns

VCC = 6.0 V

−

−

400

−

−

−

ns

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCC	supply voltage		−0.5	+7.0	V
IIK	input diode current	VI < −0.5 V or VI > VCC + 0.5 V	−	±20	mA
IOK	output diode current	VO < −0.5 V or VO > VCC + 0.5 V	−	±20	mA
IO	output source or sink	−0.5 V < VO < VCC + 0.5 V	−	±25	mA
	current
ICC, IGND	VCC or GND current		−	±50	mA
Tstg	storage temperature		−65	+150	°C
Ptot	power dissipation
	DIP14 package	Tamb = −40 to +125 °C; note 1	−	750	mW
	other packages	Tamb = −40 to +125 °C; note 2	−	500	mW

Notes

1.For DIP14 packages: above 70 °C derate linearly with 12 mW/K.

2.For SO14 packages: above 70 °C derate linearly with 8 mW/K.

For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.

2003 Jul 23

5

Philips Semiconductors	Product specification
Hex inverter	74HC04; 74HCT04

DC CHARACTERISTICS

Type 74HC04

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

SYMBOL		PARAMETER	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
			OTHER	VCC (V)
Tamb = 25 °C
VIH		HIGH-level input voltage		2.0	1.5	1.2	−	V
				4.5	3.15	2.4	−	V
				6.0	4.2	3.2	−	V
VIL		LOW-level input voltage		2.0	−	0.8	0.5	V
				4.5	−	2.1	1.35	V
				6.0	−	2.8	1.8	V
VOH		HIGH-level output voltage	VI = VIH or VIL
			IO = −20 μA	2.0	1.9	2.0	−	V
			IO = −20 μA	4.5	4.4	4.5	−	V
			IO = −4.0 mA	4.5	3.98	4.32	−	V
			IO = −20 μA	6.0	5.9	6.0	−	V
			IO = −5.2 mA	6.0	5.48	5.81	−	V
VOL		LOW-level output voltage	VI = VIH or VIL
			IO = 20 μA	2.0	−	0	0.1	V
			IO = 20 μA	4.5	−	0	0.1	V
			IO = 4.0 mA	4.5	−	0.15	0.26	V
			IO = 20 μA	6.0	−	0	0.1	V
			IO = 5.2 mA	6.0	−	0.16	0.26	V
ILI		input leakage current	VI = VCC or GND	6.0	−	0.1	±0.1	μA
IOZ		3-state output OFF current	VI = VIH or VIL;	6.0	−	−	±.0.5	μA
			VO = VCC or GND
ICC		quiescent supply current	VI = VCC or GND; IO = 0	6.0	−	−	2	μA

2003 Jul 23

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