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Transistors with built-in Resistor
1.6±0.15
1.6±0.1
1.0±0.1
0.75±0.15
0.45±0.1
0.5
0.3
0 to 0.1
0.5
0.8±0.1 0.40.4
0.2
+0.1
-0.05
0.15
+0.1
-0.05
1
2
3
0.2±0.1
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
●
UN9211 8A 10kΩ 10kΩ
●
UN9212 8B 22kΩ 22kΩ
●
UN9213 8C 47kΩ 47kΩ
●
UN9214 8D 10kΩ 47kΩ
●
UN9215 8E 10kΩ —
●
UN9216 8F 4.7kΩ —
●
UN9217 8H 22kΩ —
●
UN9218 8I 0.51kΩ 5.1kΩ
●
UN9219 8K 1kΩ 10kΩ
●
UN9210 8L 47kΩ —
●
UN921D 8M 47kΩ 10kΩ
●
UN921E 8N 47kΩ 22kΩ
●
UN921F 8O 4.7kΩ 10kΩ
●
UN921K 8P 10kΩ 4.7kΩ
●
UN921L 8Q 4.7kΩ 4.7kΩ
●
UNR921M EL 2.2kΩ 47kΩ
●
UNR921N EX 4.7kΩ 47kΩ
●
UNR921AJ 8X 100kΩ 100kΩ
●
UNR921BJ 8Y 100kΩ —
●
UNR921CJ 8Z — 47kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
)
2
+0.05
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
1.60±0.05
0.80±0.050.80
0.425 0.425
0.500.50
–0.03
1.60
1.00±0.05
0.80 0.80
+0.05
0.85
–0.03
–0.01
+0.03
0.12
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Unit: mm
Unit: mm
0.27±0.02
–0.03
+0.05
0.70
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V
100 mA
125 mW
125 ˚C
–55 to +125 ˚C
Internal Connection
1
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UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN9211 0.5
UN9212/9214/921E/921D 0.2
Emitter
cutoff
current
UN9213/UNR921M/921N/UNR921AJ
UN9215/9216/9217/9210/UNR921BJ
UN921F/921K 1.0
UN9219 1.5
UN9218/921L/UNR921CJ 2.0
Collector to base voltage V
Collector to emitter voltage V
UN9211 35
UN9212/921E 60
Forward
current
transfer
ratio
UN9213/9214/921M/UNR921AJ/921CJ
UN9215*/9216*/9217*/9210*/UNR921BJ
UN921F/921D/9219 30
UN9218/921K/921L 20
UN921N 80 400
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN9213/921K/UNR921BJ VOC = 5V, VB = 3.5V, R1 = 1kΩ 0.2
UN921D V
UN921E VCC = 5V, VB = 6V, RL = 1kΩ 0.2
UNR921AJ VCC = 5V, VB = 5V, RL = 1kΩ 0.2
Transition frequency f
UN9211/9214/9215/921K 10
UN9212/9217 22
Input
resistance
UN9213/921D/921E/9210 47
UN9216/921F/921L/UNR921N
UN9218 0.51
UN9219/UNR921M 1
UNR921AJ/921BJ 100
I
I
h
R
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
80
VCE = 10V, IC = 5mA 160 460
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 10V, R1 = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
(–30%) 4.7 (+30%) kΩ
0.1
* hFE rank classification (UN9215/9216/9217/9210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
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UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN9211/9212/9213/921L 0.8 1.0 1.2
UN9214 0.17 0.21 0.25
UN9218/9219 0.08 0.1 0.12
UN921D 4.7
Resistance
ratio
Resistance between Emitter to Base
UN921E
UN921F 0. 47
UN921K 2.13
UN921M 0.047
UN921N 0.1
UNR921AJ 1.0
UNR921CJ
R1/R
R
2
2
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
2.14
–30% 47 30% kΩ
3
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Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
150
)
125
mW
(
T
100
75
50
25
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Characteristics charts of UN9211
— V
I
C
CE
160
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
IB=1.0mA
0.9mA
0.8mA
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
V
100
)
V
(
30
CE(sat)
10
0.3
0.1
0.03
— I
CE(sat)
3
1
–25˚C
25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V
Ta=25˚C
)
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V
Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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Transistors with built-in Resistor
Characteristics charts of UN9212
UN1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
— V
I
C
160
140
IB=1.0mA
)
mA
(
C
Collector current I
0.9mA
120
100
80
60
40
20
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
100
)
V
(
CE(sat)
0.3
0.1
0.03
— I
CE(sat)
30
10
3
1
25˚C
–25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V
Ta=25˚C
)
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V
Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN9213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
100
30
10
Output current I
3
1
0.4
)
100
)
V
(
CE(sat)
0.3
0.1
0.03
Input voltage VIN (V
30
10
3
1
–25˚C
V
CE(sat)
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
C
VCE=10V
Ta=75˚C
)
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
1 3 10 30 100
Collector current IC (mA
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
5