Panasonic UNA0217 Datasheet

Small Signal Transistor Arrays

6°

12°

45°

0 to 0.1

0.5

7.7±0.3

0.5±0.2

1

56

10

6.5±0.3
10–0.4±0.1

1.5±0.1

0.8

12° 6°

8–0.9±0.1

5.5±0.3

0.2

+0.1

–0.05

UN217

Transistor array to drive the small motor

Features

■

●

Small and lightweight

●

Low power consumption (low V

●

Low-voltage drive

●

With 4 elements incorporated (SO–10C)

Applications

■

●

Video cameras

●

Cameras

●

Portable CD players

●

Small motor drive circuits in general for electronic equipment.

Absolute Maximum Ratings (Ta=25±2˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T

Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active

CBO

V

CEO

EBO

C

j

stg

transistor used)

CE(sat)

±12 V
±10 V

±7V
±1A

150 ˚C

–55 to +150 ˚C

Internal Connection

1
2
3
4
5

Unit: mm

SO–10C Package

10

9
8
7
6

1

Small Signal Transistor Arrays

Electrical Characteristics (Ta=25±2˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Forward current transfer ratio h

Collector to emitter saturation voltage

Transition frequency f

Collector output capacitance C

Forward voltage (DC) V

*Pulse measurement

CBO

CBO

CEO

EBO

FE

V

CE(sat)1

T

ob

F

(NPN) VCB = 10V 1
(PNP) VCB = –10V –1
(NPN) IC = 10µA12
(PNP) IC = –10µA –12
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 1V, IC = 0.5A* 200 800
(PNP) VCE = –1V, IC = – 0.5A* 200 800
(NPN) IC = 1A, IB = 30mA 0.3
(PNP) IC = –1A, IB = –30mA – 0.3
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
(NPN) VCB = 10V, IE = 0, f = 1MHz
(PNP) VCB = –10V, IE = 0, f = 1MHz

150
150

50

65
(NPN) IF = 1A 1.5
(PNP) IF = –1A –1.5

UN217

µA

V

V

V

V

MHz

pF

V

Characteristics charts of PNP transistor block

— Ta IC — V

P

T

0.6

)

0.5

W

(

T

0.4

0.3

0.2

0.1

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

)

2

–4.8

–4.0

)
A

(

–3.2

C

–2.4

–1.6

Collector current I

–0.8

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

CE

Ta=25˚C

IB=–14mA

–12mA
–10mA

–8mA
–6mA
–4mA

–2mA

IC — V

BE

–6

–5

)
A

(

–4

C

–3

–2

Collector current I

–1

0

0–2.4–0.4 –2.0–0.8 –1.6–1.2

)

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

VCE=–1V

)