Panasonic UNA0216 Datasheet

Small Signal Transistor Arrays

0.8

0.2

+0.1

–0.05

12˚

6˚

7.7±0.3

0.5

0 to 0.1

45˚

14-0.4±0.1

6.5±0.3

5.5±0.3

1.5±0.1

1

78

14

12˚

0.5±0.2

12-0.9±0.1

6˚

1
2
3
4
5
6
7

14
13
12
11
10

9
8

UN216

Transistor array to drive the small motor

Features

■

●

Small and lightweight

●

Low power consumption (low V

●

Low-voltage drive

●

With 6 elements incorporated. (SO–14)

Applications

■

●

Video cameras

●

Cameras

●

Portable CD players

●

Small motor drive circuits in general for electronic equipment.

Absolute Maximum Ratings (Ta=25±2˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T

Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active

CBO

V

CEO

EBO

C

j

stg

transistor used)

CE(sat)

±12 V
±10 V

±7V
±3A

150 ˚C

–55 to +150 ˚C

Unit: mm

SO–14 Package

Internal Connection

1

Small Signal Transistor Arrays UN216

Electrical Characteristics (Ta=25±2˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Forward current transfer ratio h

Collector to emitter saturation voltage

Transition frequency f

Collector output capacitance C

Forward voltage (DC) V

*Pulse measurement

CBO

CBO

CEO

EBO

FE

V

CE(sat)1

T

ob

F

(NPN) VCB = 10V 1
(PNP) VCB = –10V –1
(NPN) IC = 10µA12
(PNP) IC = –10µA –12
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 1V, IC = 0.5A* 200 800
(PNP) VCE = –1V, IC = – 0.5A* 200 800
(NPN) IC = 2A, IB = 50mA 0.25
(PNP) IC = –2A, IB = –50mA – 0.45
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz

150

150
(NPN) VCB = 10V, IE = 0, f = 1MHz 50
(PNP) VCB = 10V, IE = 0, f = 1MHz 65
(NPN) IF = 1A 1.5
(PNP) IF = –1A 1.5

µA

V

V

V

V

MHz

pF

V

Characteristics charts of PNP transistor block

— Ta IC — V

P

T

0.6

)

0.5

W

(

T

0.4

0.3

0.2

0.1

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

)

2

–6

–5

)
A

(

–4

C

–3

–2

IB=–8mA

Collector current I

–1

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

CE

–7mA

–6mA

Ta=25˚C

–5mA
–4mA

–3mA
–2mA

–1mA

IC — V

BE

–6

–5

)
A

(

–4

C

–3

–2

25˚C

Ta=75˚C –25˚C

VCE=–1V

Collector current I

–1

0

0 –2.4–0.4 –2.0–0.8 –1.6–1.2

)

Base to emitter voltage VBE (V

)