Panasonic UNA0206 Datasheet
Small Signal Transistor Arrays
6°
12°
45°
0 to 0.1
0.5
7.7±0.3
0.5±0.2
1
56
10
6.5±0.3
10–0.4±0.1
1.5±0.1
0.8
12° 6°
8–0.9±0.1
5.5±0.3
0.2
+0.1
–0.05
1
2
3
4
5
10
9
8
7
6
UN206
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption (low V
●
Protective diode incorporated (C-E monolithic)
●
Low-voltage drive
Applications
■
●
Video cameras
●
Cameras
●
Portable CD players
●
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
CBO
V
CEO
EBO
C
j
stg
transistor used)
CE(sat)
±20 V
±18 V
±5V
±1A
150 ˚C
–55 to +150 ˚C
Unit: mm
SO–10C Package
Internal Connection
1
Small Signal Transistor Arrays UN206
Electrical Characteristics (Ta=25±2˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward voltage (DC) V
Forward current transfer ratio h
Forward current transfer ratio h
Collector to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
*Pulse measurement
CBO
CER
CBO
CEO
EBO
F
FE1
FE2
V
CE(sat)1
V
CE(sat)2
T
ob
(NPN) VCB = 20V, IE = 0 1
(PNP) VCB = –20V, IE = 0 –1
(NPN) VCE = 18V, RBE = 100kΩ 10
(PNP) VCE = –18V, RBE = 100kΩ –10
(NPN) IC = 10µA, IE = 0 20
(PNP) IC = –10µA, IE = 0 –20
(NPN) IC = 1mA, IB = 0 18
(PNP) IC = –1mA, IB = 0 –18
(NPN) IE = 10µA, IC = 0 5
(PNP) IE = –10µA, IC = 0 –5
IF = 1A 1.5 V
(NPN) VCE = 2V, IC = 0.5A* 90 360
(PNP) VCE = –2V, IC = – 0.5A* 90 360
(NPN) VCE = 2V, IC = 1.5A* 50
(PNP) VCE = –2V, IC = – 1.5A* 50
(NPN) IC = 0.3A, IB = 10mA 0.2
(PNP) IC = – 0.3A, IB = –10mA – 0.2
(NPN) IC = 0.7A, IB = 10mA 0.6
(PNP) IC = – 0.7A, IB = –10mA – 0.6
(NPN) VCB = 6V, IE = 50mA, f = 200MHz
(PNP) VCB = –6V, IE = –50mA, f = 200MHz
150
200
MHz
(NPN) VCB = 6V, IE = 0, f = 1MHz 20
(PNP) VCB = –6V, IE = 0, f = 1MHz 40
µA
µA
V
V
V
V
V
pF
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
2
–3.0
–2.5
)
A
(
–2.0
C
–1.5
–1.0
Collector current I
–0.5
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–14mA
–12mA
–10mA
–8mA
–6mA
–4mA
–2mA
IC — V
BE
–3.0
–2.5
)
A
(
–2.0
C
–1.5
–1.0
Collector current I
–0.5
0
0–2.4–0.4 –2.0–0.8 –1.6–1.2
)
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
VCE=–2V
)
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