Panasonic UN0231N Datasheet
GaAs PA Module
2
1
3
789
0.59
1.5±0.2
2-1.2
4.0
7.5±0.15
4-0.7
(0.9)
7.3
7.5±0.15
5
4
6
12
11
10
4.0
Tolerance dimension
without indication : ±0.3
φ 0.8
UN0231N
RF Power Amplifier Module
For the preamplifier of the transmitting section in a cellular phone
■ Features
•
High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm)
■ Absolute Maximum Ratings Ta=25°C
Parameter Symbol Ratings Unit
1
Power supply voltage 1
Power supply voltage 2
Circuit current 1 I
Circuit current 2 I
Gate voltage V
Max input power P
Allowable power dissipation
Case temperature
Storage temperature T
Note) *1 : VGG=−3.5 V
*2 : T
=25°C
case
*3 : The reverse of the device is solderd to the plate
*
1
*
3
*
V
DD1
V
DD2
DD1
DD2
GG
IN
3
*
P
D
T
case
stg
6V
6V
200 mA
600 mA
−4V
9 dBm
2W
−30 to +90 °C
−30 to +120 °C
1 : P
2 : V
3 : V
4 : P
IN
DD1
DD2
OUT
5 : GND 9 : GND
6 : V
GG
7 : GND 11 : GND
8 : GND 12 : GND
PAM01
Marking Symbol : KK
Unit : mm
10 : GND
■ Electrical Characteristics VGG=−2.5 V, f=887 MHz to 925 MHz, Ta=25°C±3°C, Nominal : ZS=ZL=50 Ω
Parameter Symbol Conditions min typ max Unit
Idle current Iidl V
2, 3
Gate current
Circuit current 1
Gain 1
2nd harmonics
3rd harmonics
Voltage standing wave ratio
*
2, 3
*
2, 3
*
1, 3
*
1, 3
*
1, 3
*
I
I
DD1
G1 V
2f
3f
V
SWR IN
Adjacent channel leakage ACPR1 V
2, 3
power suppression 1
*
Adjacent channel leakage ACPR2 V
2, 3
power suppression 2
*
Note) *1 : No modulation.
*2 : Offset from QPSK signal.
*3 : Measurement point of input and output power is made to the terminal of device.
GG
DD1=VDD2
V
DD1=VDD2
V
DD1=VDD2
DD1=VDD2
V
O
O
DD1=VDD2
V
DD1=VDD2
V
DD1=VDD2
DD1=VDD2
±900 kHz Detuning, 30 kHz Bandwidth
DD1=VDD2
±1980 kHz Detuning, 30 kHz Bandwidth
=3.5 V, PIN=No 110 140 mA
=3.5 V, P
=3.5 V, P
=3.5 V, P
=3.5 V, P
=3.5 V, P
=3.5 V, P
=3.5 V, P
=3.5 V, P
=26.5 dBm 4 mA
OUT
=26.5 dBm 410 450 mA
OUT
=26.5 dBm 25.0 27.5 dB
OUT
=26.5 dBm −30 dBc
OUT
=26.5 dBm −30 dBc
OUT
=26.5 dBm 3
OUT
=26.5 dBm −45 dBc
OUT
=26.5 dBm −57 dBc
OUT
1
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