Panasonic DN8897SE, DN8897S, DN8897 Datasheet

Overview
The DN8897/SE/TE/S is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temper­ature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifi­er, converts into a digital signal through the Schmidt circuit, and drives the TTL or MOS IC directly.
High sensitivity and low drift
Stable temperature characterstics due to the additional tem­perture compensator
Wide operating supply voltage range (VCC=4.5 to 16V)
Operatig in alternative magnetic field
TTL and MOS ICs directly drivable by output
Provided with the output pull-up resistors (typ 27k)
“0” gauss point in the zero cross type hysteresis width
Applications
Speed sensors
Position sensors
Rotation sensors
Keyboard switches
Microswitches
Note) This IC is not suitable for car electrical equipment.
DN8897/SE/TE/S
Hall IC(Operating Temperature Range Topr
=
–40 to + 100˚C,
Operating in Alternative Magnetic Field
)
1
Hall element
· DN8897/SE/TE
Amp. Schmitt trigger Output stage
3
2
V
CC
Output
GND
Stabilized power supply temperature correction circuit
27k
Block Diagram
1
Hall element
· DN8897S
Amp. Schmitt trigger Output stage
3
4
V
CC
Output
GND
2
NC or GND
Stabilized power supply temperature correction circuit
27k
DN8897
4.5±0.3
2.0±0.3
1.0
0.7
4.0±0.3
Unit : mm
0.8±0.1
10.5±0.5
+0.1
0.43
– 0.05
1 : V 2 : GND 3 : Output
Unit : mm
CC
DN8897SE
123
4.52±0.3
0.5±0.1
1.27
SSIP003-P-0000A (E-3S)
0.55±0.15
0.4±0.1
SSIP003-P-0000C (SE-3S)
(1.0)(1.0)
0.6±0.15
DN8897S
0.6±0.2
(1.0)(1.0)
4.52±0.3
12.5±06.5
1.27 2 to 5˚
123
R0.25
4.0±0.3
3.3±0.3
10.0±0.6
0.5±0.1 1.2±0.1
1.27 123
SSIP003-P-0000B (TE-3S)
1
2
(0.72)
(0.4)
(0.6)
4
3
1.54±0.1
(0.7)
1.6
1 : V
CC
2 : GND 3 : Output
(0.2)
1 : V
CC
2 : GND 3 : Output
0.95±0.2
45˚
Unit : mmDN8897TE
Unit : mm
3.0±0.3
0.3 to 0.5
ESOP004-P-0200 (SOH-4D)
3.0±0.3
5.4±0.4
0.15
0.4±0.2
0 to 0.1
1 : V
CC
2 : NC or GND 3 : Output 4 : GND
1.5±0.3
V
CC
I
CC
I
O
P
D
T
opr
T
stg
Supply voltage Supply current Circuit current Power dissipation Operating ambient temperature Storage temperature
V mA mA
mW
˚C ˚C
Absolute Maximum Ratings (Ta=25˚C)
18
8
20
150 –40 to +100 –55 to +125
Parameter Symbol Rating Unit
Electrical Characteristics (Ta=25˚C)
Operating flux density
–12B
1 (LH)
mT–6
V
CC
=12V
B
2 (HL)
12 mT6
V
CC
=12V
Hysteresis width
7BW mT10
VCC=12V
Output voltage
V
OL
0.4 V
V
CC
=16V, VO=0V,
B=–12mT
14.7
V
OH
V
2.9 V
Output short-circuit current
0.4–I
OS
0.9 mA
Supply current
1 mA
V
CC
=16V
1
I
CC
5.5 mA
V
CC
=4.5V
6
– 0.1
0.1
VCC=4.5V, IO=–30µA, B=–12mT
V
CC
=16V, IO=–30µA,
B=–12mT
V
CC
=4.5 to16V, IO=12mA,
B=12mT
Parameter Symbol Condition min typ max Unit
1.5
1.5
1.0
1.3
1.0 1.75
1.0
1.0
Unit : mm The center of the Hall element is in the hatched area in the right figure.
· DN8897
1.0
1.25
1.0 1.63
· DN8897SE
1.0
1.15
1.0 1.5
· DN8897TE · DN8897S
Distance from package surface to sensor (mm)
DN8897
0.7
DN8897SE
0.42
DN8897TE
0.4
DN8897S
0.65
Hall Element Position
Marking surface
Applied flux direction
Flux density (B)
Output voltage (V
O
)
B
1
B
2
Flux-Voltage Conversion Characteristics
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