■ Overview
The DN8897/SE/TE/S is a combination of a Hall element,
amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmidt circuit,
and drives the TTL or MOS IC directly.
■ Features
•
High sensitivity and low drift
•
Stable temperature characterstics due to the additional temperture compensator
•
Wide operating supply voltage range (VCC=4.5 to 16V)
•
Operatig in alternative magnetic field
•
TTL and MOS ICs directly drivable by output
•
Provided with the output pull-up resistors (typ 27kΩ)
•
“0” gauss point in the zero cross type hysteresis width
■ Applications
•
Speed sensors
•
Position sensors
•
Rotation sensors
•
Keyboard switches
•
Microswitches
Note) This IC is not suitable for car electrical equipment.
DN8897/SE/TE/S
Hall IC(Operating Temperature Range
Topr
=
–40 to + 100˚C,
Operating in Alternative Magnetic Field
)
1
Hall element
· DN8897/SE/TE
Amp. Schmitt trigger Output stage
3
2
V
CC
Output
GND
Stabilized power supply
temperature correction circuit
27kΩ
1
Hall element
· DN8897S
Amp. Schmitt trigger Output stage
3
4
V
CC
Output
GND
2
NC
or
GND
Stabilized power supply
temperature correction circuit
27kΩ
DN8897
4.5±0.3
2.0±0.3
1.0
0.7
4.0±0.3
5˚
Unit : mm
0.8±0.1
10.5±0.5
+0.1
0.43
– 0.05
1 : V
2 : GND
3 : Output
Unit : mm
CC
5˚
2˚
DN8897SE
123
4.52±0.3
0.5±0.1
1.27
5˚
2˚
SSIP003-P-0000A (E-3S)
0.55±0.15
0.4±0.1
SSIP003-P-0000C (SE-3S)
(1.0)(1.0)
0.6±0.15
DN8897S
0.6±0.2
(1.0)(1.0)
4.52±0.3
12.5±06.5
1.27
2 to 5˚
123
2˚
R0.25
4.0±0.3
3.3±0.3
10.0±0.6
0.5±0.1 1.2±0.1
1.27
123
SSIP003-P-0000B (TE-3S)
1
2
(0.72)
(0.4)
(0.6)
4
3
2˚
1.54±0.1
(0.7)
1.6
1 : V
CC
2 : GND
3 : Output
(0.2)
1 : V
CC
2 : GND
3 : Output
0.95±0.2
45˚
Unit : mmDN8897TE
Unit : mm
3.0±0.3
0.3 to 0.5
ESOP004-P-0200 (SOH-4D)
3.0±0.3
5.4±0.4
0.15
0.4±0.2
0 to 0.1
1 : V
CC
2 : NC or GND
3 : Output
4 : GND
1.5±0.3
V
CC
I
CC
I
O
P
D
T
opr
T
stg
Supply voltage
Supply current
Circuit current
Power dissipation
Operating ambient temperature
Storage temperature
V
mA
mA
mW
˚C
˚C
■ Absolute Maximum Ratings (Ta=25˚C)
18
8
20
150
–40 to +100
–55 to +125
Parameter Symbol Rating Unit
■ Electrical Characteristics (Ta=25˚C)
Operating flux density
–12B
1 (L→H)
mT–6
V
CC
=12V
B
2 (H→L)
12 mT6
V
CC
=12V
Hysteresis width
7BW mT10
VCC=12V
Output voltage
V
OL
0.4 V
V
CC
=16V, VO=0V,
B=–12mT
14.7
V
OH
V
2.9 V
Output short-circuit current
0.4–I
OS
0.9 mA
Supply current
1 mA
V
CC
=16V
1
I
CC
5.5 mA
V
CC
=4.5V
6
– 0.1
0.1
VCC=4.5V, IO=–30µA,
B=–12mT
V
CC
=16V, IO=–30µA,
B=–12mT
V
CC
=4.5 to16V, IO=12mA,
B=12mT
Parameter Symbol Condition min typ max Unit
1.5
1.5
1.0
1.3
1.0 1.75
1.0
1.0
Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.
· DN8897
1.0
1.25
1.0 1.63
· DN8897SE
1.0
1.15
1.0 1.5
· DN8897TE · DN8897S
Distance from package
surface to sensor (mm)
DN8897
0.7
DN8897SE
0.42
DN8897TE
0.4
DN8897S
0.65
Marking surface
Applied flux direction
Flux density (B)
Output voltage (V
O
)
B
1
B
2
■ Flux-Voltage Conversion Characteristics