Panasonic DN8897SE, DN8897S, DN8897 Datasheet

■ Overview

The DN8897/SE/TE/S is a combination of a Hall element,
amplifier, Schmidt circuit, and stabilized power supply/temper­ature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifi­er, converts into a digital signal through the Schmidt circuit,
and drives the TTL or MOS IC directly.

■ Features

•

High sensitivity and low drift

•

Stable temperature characterstics due to the additional tem­perture compensator

•

Wide operating supply voltage range (VCC=4.5 to 16V)

•

Operatig in alternative magnetic field

•

TTL and MOS ICs directly drivable by output

•

Provided with the output pull-up resistors (typ 27kΩ)

•

“0” gauss point in the zero cross type hysteresis width

■ Applications

•

Speed sensors

•

Position sensors

•

Rotation sensors

•

Keyboard switches

•

Microswitches

Note) This IC is not suitable for car electrical equipment.

DN8897/SE/TE/S

Hall IC(Operating Temperature Range
Topr

=

–40 to + 100˚C,

Operating in Alternative Magnetic Field

)

1

Hall element

· DN8897/SE/TE

Amp. Schmitt trigger Output stage

3

2

V

CC

Output

GND

Stabilized power supply
temperature correction circuit

27kΩ

■ Block Diagram

1

Hall element

· DN8897S

Amp. Schmitt trigger Output stage

3

4

V

CC

Output

GND

2

NC
or
GND

Stabilized power supply
temperature correction circuit

27kΩ

DN8897

4.5±0.3

2.0±0.3

1.0

0.7

4.0±0.3

5˚

Unit : mm

0.8±0.1

10.5±0.5

+0.1

0.43

– 0.05

1 : V
2 : GND
3 : Output

Unit : mm

CC

5˚

2˚

DN8897SE

123

4.52±0.3

0.5±0.1

1.27

5˚

2˚

SSIP003-P-0000A (E-3S)

0.55±0.15

0.4±0.1

SSIP003-P-0000C (SE-3S)

(1.0)(1.0)

0.6±0.15

DN8897S

0.6±0.2

(1.0)(1.0)

4.52±0.3

12.5±06.5

1.27
2 to 5˚

123

2˚

R0.25

4.0±0.3

3.3±0.3

10.0±0.6

0.5±0.1 1.2±0.1

1.27
123

SSIP003-P-0000B (TE-3S)

1

2

(0.72)

(0.4)

(0.6)

4

3

2˚

1.54±0.1

(0.7)

1.6

1 : V

CC

2 : GND
3 : Output

(0.2)

1 : V

CC

2 : GND
3 : Output

0.95±0.2

45˚

Unit : mmDN8897TE

Unit : mm

3.0±0.3

0.3 to 0.5

ESOP004-P-0200 (SOH-4D)

3.0±0.3

5.4±0.4

0.15

0.4±0.2

0 to 0.1

1 : V

CC

2 : NC or GND
3 : Output
4 : GND

1.5±0.3

V

CC

I

CC

I

O

P

D

T

opr

T

stg

Supply voltage
Supply current
Circuit current
Power dissipation
Operating ambient temperature
Storage temperature

V
mA
mA

mW

˚C
˚C

■ Absolute Maximum Ratings (Ta=25˚C)

18

8

20

150
–40 to +100
–55 to +125

Parameter Symbol Rating Unit

■ Electrical Characteristics (Ta=25˚C)

Operating flux density

–12B

1 (L→H)

mT–6

V

CC

=12V

B

2 (H→L)

12 mT6

V

CC

=12V

Hysteresis width

7BW mT10

VCC=12V

Output voltage

V

OL

0.4 V

V

CC

=16V, VO=0V,

B=–12mT

14.7

V

OH

V

2.9 V

Output short-circuit current

0.4–I

OS

0.9 mA

Supply current

1 mA

V

CC

=16V

1

I

CC

5.5 mA

V

CC

=4.5V

6

– 0.1

0.1

VCC=4.5V, IO=–30µA,
B=–12mT

V

CC

=16V, IO=–30µA,

B=–12mT

V

CC

=4.5 to16V, IO=12mA,

B=12mT

Parameter Symbol Condition min typ max Unit

1.5

1.5

1.0

1.3

1.0 1.75

1.0

1.0

Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.

· DN8897

1.0

1.25

1.0 1.63

· DN8897SE

1.0

1.15

1.0 1.5

· DN8897TE · DN8897S

Distance from package
surface to sensor (mm)

DN8897

0.7

DN8897SE

0.42

DN8897TE

0.4

DN8897S

0.65

■ Hall Element Position

Marking surface

Applied flux direction

Flux density (B)

Output voltage (V

O

)

B

1

B

2

■ Flux-Voltage Conversion Characteristics