Panasonic DN6849SE, DN6849S, DN6849 Datasheet

■ Overview

The DN6849/SE/TE/S is a combination of a Hall element,
amplifier, Schmitt circuit, and stabilized power supply/temper­ature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifi­er, converts into a digital signal through the Schmitt circuit,
and drives the TTL or MOS IC directly.

■ Features

•

High sensitivity and low drift

•

Stable temperature characteristics due to the additional tem­perature compensator

•

Wide operating supply voltage range (V

CC

=4.5 to 16V)

•

Operating in alternative magnetic field

•

TTL and MOS ICs directly drivable by output

•

Output open collector

■ Applications

•

Speed sensors

•

Position sensors

•

Rotation sensors

•

Keyboard switches

•

Microswitches

Note) This IC is not suitable for car electrical equipments.

DN6849/SE/TE/S

Hall IC (Operating Temperature Range
Topr = – 40 to +100˚C,

Operating in Alternative

Magnetic Field)

Unit : mm

DN6849

SSIP003-P-0000A (E-3S)

1 : V

CC

2 : GND
3 : Output

0.5±0.1

5˚

123

2˚

5˚

5˚

2˚

1.27

4.0±0.3

0.7

4.5±0.3

0.43

+0.1
– 0.05

2.0±0.3

0.8±0.1

1.0

10.5±0.5

■ Block Diagram

1

Hall element

· DN6849S

Amp. Schmitt trigger Output stage

3

4

2

V

CC

Output

GND

NC
or
GND

Stabilized power supply
temperature correction circuit

DN6849SE

0.55±0.15

0.4±0.1

DN6849TE

4.52±0.3

(1.0)(1.0)

12.5±06.5

1.27
2 to 5˚

123

2˚

SSIP003-P-0000 (SE-3S)

(1.0)(1.0)

R0.25

4.0±0.3

Unit : mm

2˚

4.52±0.3

(0.72)

(0.4)

1.54±0.1

(0.7)

(0.6)

3.3±0.3

1 : V

CC

2 : GND
3 : Output

45˚

Unit : mm

· DN6849/SE/TE

Hall element

Stabilized power supply
temperature correction circuit

Amp. Schmitt trigger Output stage

1

3

2

V

CC

Output

GND

0.6±0.15

SSIP003-P-0000B (TE-3S)

DN6849S

1

2

0.6±0.2

0.3 to 0.5

ESOP004-P-0200 (SOH-4D)

0.5±0.1 1.2±0.1

1.27
123

3.0±0.3

5.4±0.4

10.0±0.6

4

3

(0.2)

1 : V
2 : GND
3 : Output

1.6

0.95±0.2

0.15

0.4±0.2

0 to 0.1

1 : V

CC

2 : NC or GND
3 : Output
4 : GND

CC

Unit : mm

3.0±0.3

1.5±0.3

V

CC

I

CC

I

O

P

D

T

opr

T

stg

Supply voltage
Supply current
Circuit current
Power dissipation
Opearting ambient temperature
Storage temperature

V
mA
mA

mW

˚C
˚C

Parameter Symbol Rating Unit

■ Absolute Maximum Ratings (Ta=25˚C)

18

8

20

150
–40 to+100
–55 to+125

Parameter Symbol Condition min typ max Unit

■ Electrical Characteristics (Ta=25˚C)

Operating flux density

–17.5B

1 (L to H)

mT–6

V

CC

=12V

B

2 (H to L)

17.5 mT6

V

CC

=12V

Hysteresis width

7BW mT10

VCC=12V

Low output voltage

V

OL

0.4 V

Supply current

mA

V

CC

=16V

I

CC

5.5 mA

V

CC

=4.5V

6

High output current

I

OH

10 µA

V

CC

=4.5 to 16V, IO=12mA,

B=17.5mT
V

CC

=4.5 to 16V, VO=16V,

B=–17.5mT

1.5

1.5

1.0

1.3

1.0 1.75

1.0

1.0

Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.

· DN6849

1.0

1.25

1.0 1.63

· DN6849SE

1.0

1.15

1.0 1.5

· DN6849TE · DN6849S

Distance from package
surface to sensor

DN6849

0.7

DN6849SE

0.42

DN6849TE

0.4

DN6849S

0.65

■ Hall Element Position

Marking surface

Applied flux direction

Flux density (B)

Output voltage (V

O

)

B

1

B

2

■ Flux-Voltage Conversion Characteristics