Panasonic 2SD1742A, 2SD1742 Datasheet

Po wer Transistors

2SD1742, 2SD1742A

Silicon NPN triple diffusion planar type

For low-freauency power amplification
Complementary to 2SB1172 and 2SB1172A

7.0±0.3

3.0±0.2

3.5±0.2

Unit: mm

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

I type package enabling direct soldering of the radiating fin to

CE(sat)

the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1742
2SD1742A
2SD1742

2SD1742A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1742
2SD1742A
2SD1742

2SD1742A
Emitter cutoff current
Collector to emitter
voltage

2SD1742

2SD1742A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

CBO

CEO

EBO

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

60
80
60
80

6
5
3

15

1.3

150

–55 to +150

=25˚C)

VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

min

60
80
70
10

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

1.0 max.

typ

30

0.5

2.5

0.4

0.85±0.1

0.4±0.1

1:Base
2:Collector
3:Emitter
I Type Package

Unit: mm

3.5±0.2
0 to 0.15

1.01.0

2.5

0.9±0.1

0.5 max.
0 to 0.15

1:Base
2:Collector
3:Emitter
I Type Package (Y)

max

200
200
300
300

Unit

µA

µA

1

mA

V

250

1.8

1.2

V
V

MHz

µs
µs
µs

2.5±0.2

2.5±0.2

1

Po wer Transistors 2SD1742, 2SD1742A

PC—Ta IC—V

20

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

(1)

(2)

V

CE(sat)—IC

(P

=1.3W)

C

TC=100˚C

)

IC/IB=8

25˚C

–25˚C

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

IB=100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

TC=25˚C

90mA
80mA
70mA
60mA

50mA

40mA

30mA

20mA

10mA

VCE=4V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

25˚C

TC=100˚C

–25˚C

fT—I

C

VCE=10V
f=10MHz
T

=25˚C

C

Collector current IC (A

=4V

CE

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

300ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD1742

2SD1742A

Collector to emitter voltage VCE (V

)

3

10

)
˚C/W

2

(

10

(t)

th

10

1

Thermal resistance R

–1

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10