Panasonic 2SD1611 Datasheet

Po wer Transistors

2SD1611

Silicon NPN triple diffusion planar type Darlington

For power amplification

10.0±0.310.5min.

Features

■

●

High foward current transfer ratio h

●

High collector to base voltage V

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

CBO

=25˚C)

C

Ratings

500
400

5

10

6

40

1.3

150

–55 to +150

Unit

V
V
V
A
A

W

˚C
˚C

2.0 1.5±0.1

10.0±0.3

2.0

4.4±0.5

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

Internal Connection

B

Symbol

I

CBO

V

CEO(sus)

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

=25˚C)

C

Conditions

VCB = 350V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 1A, f = 1MHz

C

E

min

400

5

500

typ15max

100

1.5

2.5

Unit

µA

V
V

V
V

MHz

1

Po wer Transistors 2SD1611

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=1.3W)

(P

C

(1)

(3)

(2)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=50

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

0654132

)

Collector to emitter voltage VCE (V

IB=8mA

hFE—I

5

10

FE

4

10

3

10

TC=100˚C

2

10

25˚C

Forward current transfer ratio h

–25˚C

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

C

TC=25˚C

1.5mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10

)
pF

(

ob

10

10

10

Collector output capacitance C

V

CE(sat)—IC

IC/IB=50

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Cob—V

4

3

2

1

0.1 1 10 1000.3 3 30

TC=100˚C

CB

–25˚C

IE=0
f=1MHz
T

=25˚C

C

25˚C

)

Collector to base voltage VCB (V

)

Area of safe operation (ASO) R

100

30

I

)

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

Non repetitive pulse

=25˚C

T

C

1ms

Collector to emitter voltage VCE (V

t=10µs

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10