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Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SD1539, 2SD1539A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1071 and 2SB1071A
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1539
2SD1539A
2SD1539
2SD1539A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
2SD1539
2SD1539A
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
2SD1539
2SD1539A
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Ratings
40
50
20
40
5
8
4
25
2
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V
TO–220 Full Pack Package(a)
min
typ
20
40
45
90
120
0.2
0.5
0.1
max
50
50
50
260
0.5
1.5
1:Base
2:Collector
3:Emitter
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
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Po wer Transistors 2SD1539, 2SD1539A
PC—Ta IC—V
40
)
35
W
(
C
30
25
20
15
10
5
Collector power dissipation P
0
0 15012510025 7550
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
(1)
(2)
(3)
(4)
=2W)
C
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=10
TC=–25˚C
25˚C
100˚C
Collector current IC (A
)
CE
6
5
)
A
(
4
C
3
2
IB=60mA
50mA
TC=25˚C
40mA
30mA
20mA
10mA
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
TC=100˚C
300
100
30
10
Forward current transfer ratio h
3
1
0.1 1 10 1000.3 3 30
25˚C
–25˚C
Collector current IC (A
5mA
C
VCE=2V
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
3
1
0.01 0.1 1 100.03 0.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=5V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=10
–25˚C
)
=25˚C
)
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
082647153
Collector current IC (A
2
t
t
t
stg
on
f
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10 (IB1=–IB2)
I
C/IB
=20V
V
CC
=25˚C
T
C
Area of safe operation (ASO)
100
30
)
I
CP
10
A
(
I
C
C
3
10ms
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
t=1ms
DC
2SD1539
Non repetitive pulse
=25˚C
T
C
2SD1539A
)