Panasonic 2SD1539A Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1539, 2SD1539A

Silicon NPN epitaxial planar type

For low-voltage switching
Complementary to 2SB1071 and 2SB1071A

Features

■

●

Low collector to emitter saturation voltage V

●

High-speed switching

●

Full-pack package which can be installed to the heat sink with
one screw

CE(sat)

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1539
2SD1539A
2SD1539

2SD1539A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1539

2SD1539A
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

2SD1539

2SD1539A

Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

40
50
20
40

5
8
4

25

2

150

–55 to +150

=25˚C)

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V

TO–220 Full Pack Package(a)

min

typ

20
40
45
90

120

0.2

0.5

0.1

max

50
50
50

260

0.5

1.5

1:Base
2:Collector
3:Emitter

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1539, 2SD1539A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 15012510025 7550

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

(1)

(2)

(3)
(4)

=2W)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=10

TC=–25˚C

25˚C

100˚C

Collector current IC (A

)

CE

6

5

)
A

(

4

C

3

2

IB=60mA

50mA

TC=25˚C

40mA

30mA

20mA

10mA

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (A

5mA

C

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=10

–25˚C

)

=25˚C

)

10

)

3

µs

(

f

,t

1

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

2

t

t
t

stg

on

f

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=20V

V

CC

=25˚C

T

C

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

C

3

10ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

t=1ms

DC

2SD1539

Non repetitive pulse

=25˚C

T

C

2SD1539A

)