Panasonic 2SD1538, 2SD1538A Datasheet

Po wer Transistors

2SD1538, 2SD1538A

Silicon NPN epitaxial planar type

For low-voltage switching
Complementary to 2SB1070 and 2SB1070A

8.5±0.2

6.0±0.5

3.4±0.3

Unit: mm

1.0±0.1

Features

■

●

Low collector to emitter saturation voltage V

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to

CE(sat)

the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1538
2SD1538A
2SD1538

2SD1538A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

Parameter

Collector cutoff
current

2SD1538

2SD1538A
Emitter cutoff current
Collector to emitter
voltage

2SD1538

2SD1538A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

CBO

CEO

EBO

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

40
50
20
40

5
8
4

25

1.3

150

–55 to +150

=25˚C)

VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

min

20
40
45
90

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

typ

max

120

0.2

0.5

0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

Unit

50
50
50

µA

µA

V

260

0.5

1.5

V
V

MHz

µs
µs
µs

14.7±0.5

1

Po wer Transistors 2SD1538, 2SD1538A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 15012510025 7550

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

(1)

(2)

(3)
(4)

=1.3W)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=10

TC=–25˚C

25˚C

100˚C

Collector current IC (A

)

CE

6

5

)
A

(

4

C

3

2

IB=60mA

50mA

40mA

30mA

20mA

T

C

10mA

=25˚C

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (A

5mA

C

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=10

–25˚C

)

=25˚C

)

10

)

3

µs

(

f

,t

1

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

2

t

t
t

stg

on

f

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=20V

V

CC

=25˚C

T

C

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

C

3

300ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

2SD1538

2SD1538A

)