Panasonic 2SD1535 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1535

Silicon NPN triple diffusion planar type Darlington

For high power amplification

Features

■

●

Extremely satisfactory linearity of the forward current transfer
ratio h

●

●

●

■

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

FE

High collector to base voltage V

CBO

Wide area of safe operation (ASO)
Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

Parameter

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

=25˚C)

C

Ratings

500
400

12
14

7

0.5
50

2

150

–55 to +150

Unit

V
V
V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Internal Connection

C

B

E

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

V

CEO(sus)

T est circuit

60Hz

120Ω

6V

Symbol

I

CBO

I

CEO

I

EBO

V

CEO(sus)

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

1Ω

=25˚C)

C

Conditions

VCB = 500V, IE = 0
VCE = 400V, IB = 0
VEB = 12V, IC = 0

*

IC = 100mA, RBZ = ∞, L = 25mH
VCE = 2V, IC = 2A
VCE = 2V, IC = 6A
IC = 7A, IB = 70mA
IC = 7A, IB = 70mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 7A, IB1 = 70mA, IB2 = –70mA,
VCC = 300V

X

L 25mH

15V

IC(A)

0.2

Y
G

0.1

min

400

typ

max

0.1

0.1

100

Unit

mA
mA
mA

mA
500
200

2.0

2.5

20

1.5

5.0

6.5

(V)

V

80

CE

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1535

PC—Ta IC—V

100

)
W

(

80

C

60

40

20

Collector power dissipation P

0

0 15012510025 7550

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2.0W)

C

(1)

(3)

(2)

(4)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=100

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

10

8

)

A

(

C

6

4

Collector current I

2

0

0654132

)

Collector to emitter voltage VCE (V

hFE—I

100000

30000

FE

10000

3000

1000

300

TC=100˚C

100

25˚C

Forward current transfer ratio h

–25˚C

30

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

IB=20mA

10mA

5mA

3mA

2mA
1mA

C

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

30

)
µs

(

10

f

,t

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01

V

CE(sat)—IC

IC/IB=100

TC=100˚C

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

ton, t

, tf—I

t

stg

3

t

f

1

t

on

082647153

stg

C

Pulsed tw=1ms
Duty cycle=1%
I

=100 (IB1=–IB2)

C/IB

=300V

V

CC

T

=25˚C

C

Collector current IC (A

–25˚C

)

)

Area of safe operation (ASO) R

100

30

I

CP

)

I

10

A

C

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

1ms

DC

t=0.1ms

Collector to emitter voltage VCE (V

)

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)

˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–3

10

–2

10

2

—t

th(t)

(1)

(2)

–1

110

Time t (s

10 10

)

2

10

3

4

10