Panasonic 2SD1511 Datasheet

Transistor

2SD1511

Silicon NPN epitaxial planer type darlington

For low-frequency output amplification

Unit: mm

Features

■

●

Forward current transfer ratio hFE is designed high, which is ap­propriate to the driver circuit of motors and printer bammer: h
= 4000 to 2000.

●

A shunt resistor is omitted from the driver.

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

100

80

5

1.5
1
1

150

–55 ~ +150

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

FE

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

2.5±0.1

0.4±0.04

Marking symbol : P
Internal Connection

C

B

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*1

hFE Rank classification

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

*1

h

FE

V

CE(sat)

V

BE(sat)

f

T

Rank Q R S

h

FE

4000 ~ 10000 8000 ~ 20000 16000 ~ 40000

Marking Symbol PQ PR PS

Conditions

VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1A
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz

min

100

80

5

4000

E

typ

max

100
100

40000

1.8

2.2

150

*2

Pulse measurement

Unit

nA
nA

V
V
V

V
V

MHz

1

Transistor

2SD1511

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

100

)
V

(

30

BE(sat)

10

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

3

Ta=–25˚C

1

25˚C

75˚C

C

IC/IB=1000

V

CE

2.4

2.0

)
A

(

1.6

C

1.2

0.8

100µA

120µA

160µA

140µA

Collector current I

0.4

0

0108264

)

Collector to emitter voltage VCE (V

hFE — I

5

10

FE

4

10

3

10

25˚C

Ta=25˚C

180µA

IB=200µA

80µA
60µA

40µA

C

VCE=10V

Ta=75˚C

–25˚C

)

100

V

(

30

CE(sat)

10

3

25˚C

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

30

)
pF

(

25

ob

20

15

— I

CE(sat)

Ta=–25˚C

75˚C

Cob — V

CB

C

IC/IB=1000

)

IE=0
f=1MHz
Ta=25˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

2

10

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

10

5

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

2