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Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
Features
■
●
Extremely satisfactory linearity of the forward current transfer
ratio h
●
●
●
■
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
FE
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
Parameter
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
100
100
5
8
5
40
2
150
–55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE2
Rank Q P
h
FE2
60 to 120 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, f = 1MHz
min
20
60
20
typ
20
90
max
50
50
200
1.8
2.0
Unit
µA
µA
V
V
MHz
pF
1
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Po wer Transistors 2SD1499
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2.0W)
(P
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
25˚C
TC=100˚C
Collector current IC (A
–25˚C
)
)
CE
10
8
)
A
(
C
6
4
Collector current I
2
0
012108264
IB=100mA
80mA
60mA
40mA
20mA
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
300
100
30
10
Forward current transfer ratio h
–25˚C
3
1
0.01 0.1 1 100.03 0.3 3
25˚C
Collector current IC (A
TC=25˚C
10mA
VCE=5V
)
8
7
)
6
A
(
C
5
4
3
2
Collector current I
1
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
1000
300
)
MHz
100
(
T
30
10
3
1
Transition frequency f
0.3
0.1
0.01 0.1 1 100.03 0.3 3
IC—V
BE
VCE=5V
25˚C
fT —I
–25˚C
C
VCE=5V
f=1MHz
T
C
TC=100˚C
Collector current IC (A
)
=25˚C
)
Area of safe operation (ASO) R
100
30
)
I
CP
10
A
(
C
I
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
Collector to emitter voltage VCE (V
)
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
1
–1
10
Thermal resistance R
–2
10
–3
10
–2
10
2
—t
th(t)
(1)
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10