Panasonic 2SD1499 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1499

Silicon NPN triple diffusion planar type

For high power amplification
Complementary to 2SB1063

Features

■

●

Extremely satisfactory linearity of the forward current transfer
ratio h

●

●

●

■

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

FE

Wide area of safe operation (ASO)
High transition frequency f

T

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

Parameter

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Ratings

100
100

5
8
5

40

2

150

–55 to +155

Unit

V
V
V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE2

Rank Q P

h

FE2

60 to 120 100 to 200

C

Symbol

I

CBO

I

EBO

h

FE1

*

h

FE2

h

FE3

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, f = 1MHz

min

20
60
20

typ

20
90

max

50
50

200

1.8

2.0

Unit

µA
µA

V
V

MHz

pF

1

Po wer Transistors 2SD1499

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2)

(3)

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=10

25˚C

TC=100˚C

Collector current IC (A

–25˚C

)

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

012108264

IB=100mA

80mA

60mA

40mA

20mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

–25˚C

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

TC=25˚C

10mA

VCE=5V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

VCE=5V

25˚C

fT —I

–25˚C

C

VCE=5V
f=1MHz
T

C

TC=100˚C

Collector current IC (A

)

=25˚C

)

Area of safe operation (ASO) R

100

30

)

I

CP

10

A

(

C

I

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

Collector to emitter voltage VCE (V

)

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)
˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–3

10

–2

10

2

—t

th(t)

(1)

(2)

–1

110

Time t (s

10 10

)

2

10

3

4

10