Panasonic 2SD1480 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1480

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB1052

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

CE(sat)

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

70 to 150 120 to 250

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

60
60

6
4
2

25

2

150

–55 to +150

=25˚C)

Unit

V
V
V
A
A

W

˚C
˚C

Conditions

VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

TO–220 Full Pack Package(a)

min

typ

60
35
70

20

0.2

3.5

0.7

max

200
300

1

250

1.2
2

1:Base
2:Collector
3:Emitter

Unit

µA
µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1480

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 15012510025 7550

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

(1)

(2)

(3)
(4)

=2.0W)

C

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=10

TC=100˚C

25˚C

–25˚C

Collector current IC (A

)

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

IB=100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

Forward current transfer ratio h

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

80mA

50mA
40mA

30mA
20mA

10mA
5mA
1mA

VCE=4V

)

6

5

)
A

(

4

C

3

2

Collector current I

1

0

03.02.52.00.5 1.51.0

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

25˚C

TC=100˚C

–25˚C

fT—I

C

Collector current IC (A

VCE=4V

VCE=10V
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse
T

C

t=10ms

1ms

DC

=25˚C

Collector to emitter voltage VCE (V

)

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)
˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10