Panasonic 2SD1478A, 2SD1478 Datasheet
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Features
■
●
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: h
= 4000 to 20000.
●
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1478
2SD1478A
2SD1478
2SD1478A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
FE
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : 2N
(2SD1478)
(2SD1478A)
2O
Internal Connection
B
Unit: mm
C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
*1
h
Rank classification
FE1
Marking
Symbol
Rank Q R
h
FE1
2SD1478 2NQ 2NR
2SD1478A 2OQ 2OR
2SD1478
2SD1478A
2SD1478
2SD1478A
4000 ~ 10000 8000 ~ 20000
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
*2
*2
*2
VCB = 10V, IE = –50mA, f = 200MHz
min
30
60
25
50
5
4000
E
typ
max
100
100
20000
2.5
3.0
200
*2
Pulse measurement
Unit
nA
nA
V
V
V
V
V
MHz
1
Transistor
2SD1478, 2SD1478A
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
25˚C
Ta=–25˚C
75˚C
C
IC/IB=1000
V
CE
1000
300
)
100
mA
(
C
30
10
3
1
Collector current I
0.3
0.1
0.1 1 10 1000.3 3 30
)
Collector to emitter voltage VCE (V
IB=50µA
hFE — I
5
10
FE
4
10
3
10
25˚C
Ta=75˚C
–25˚C
45µA
40µA
C
Ta=25˚C
35µA
30µA
25µA
20µA
15µA
10µA
5µA
VCE=10V
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
6
)
pF
(
5
ob
4
3
CE(sat)
25˚C
Ta=75˚C
–25˚C
Cob — V
— I
CB
C
IC/IB=1000
)
IE=0
f=1MHz
Ta=25˚C
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
)
2
10
Forward current transfer ratio h
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
2
1
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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