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Transistor
2SD1458
Silicon NPN epitaxial planer type
For low-frequency amplification
Features
■
●
High foward current transfer ratio hFE.
●
Low collector to emitter saturation voltage V
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
20
20
15
1.5
0.7
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA
*
*
VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
20
15
1000
typ
max
10
2500
0.4
55
11
15
*2
Pulse measurement
Unit
1
µA
µA
V
V
V
V
MHz
pF
1
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Transistor
2SD1458
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0
0 20016040 12080
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
3
1
Ta=75˚C
0.01 0.1 1 100.03 0.3 3
25˚C
C
–25˚C
Collector current IC (A
)
IC/IB=10
)
CE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
0108264
Ta=25˚C
IB=100µA
90µA
Collector to emitter voltage VCE (V
hFE — I
C
3000
FE
2500
Ta=75˚C
2000
1500
1000
Forward current transfer ratio h
25˚C
–25˚C
500
0
0.01 0.1 1 100.03 0.3 3
VCE=10V
Collector current IC (A
80µA
70µA
60µA
50µA
40µA
30µA
20µA
10µA
)
2.4
2.0
)
A
(
1.6
C
1.2
0.8
Collector current I
0.4
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
300
)
250
MHz
(
T
200
150
100
50
Transition frequency f
0
–1 –10 –100 –1000–3 –30 –300
IC — V
BE
VCE=10V
25˚C
Ta=75˚C
fT — I
–25˚C
E
VCB=10V
Ta=25˚C
Emitter current IE (mA
)
)
)
pF
(
Cob — V
24
20
ob
16
12
8
4
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)