Panasonic 2SD1458 Datasheet

Transistor

2SD1458

Silicon NPN epitaxial planer type

For low-frequency amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

20
20
15

1.5

0.7

150

–55 ~ +150

1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Conditions

VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA

*

*

VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
20
15

1000

typ

max

10

2500

0.4
55
11

15

*2

Pulse measurement

Unit

1

µA
µA

V
V
V

V

MHz

pF

1

Transistor

2SD1458

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

3

1

Ta=75˚C

0.01 0.1 1 100.03 0.3 3

25˚C

C

–25˚C

Collector current IC (A

)

IC/IB=10

)

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

0108264

Ta=25˚C

IB=100µA

90µA

Collector to emitter voltage VCE (V

hFE — I

C

3000

FE

2500

Ta=75˚C

2000

1500

1000

Forward current transfer ratio h

25˚C

–25˚C

500

0

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

80µA

70µA
60µA

50µA
40µA
30µA
20µA
10µA

)

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

300

)

250

MHz

(

T

200

150

100

50

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

)

)

)
pF

(

Cob — V

24

20

ob

16

12

8

4

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)