Panasonic 2SD1450 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1450

Silicon NPN epitaxial planar type

For low-frequency amplification

■ Features

• Optimum for high-density mounting

• Allowing supply with the radial taping

• Low collector-emitter saturation voltage V

CE(sat)

0.75 max.

4.0±0.2

(0.8)(0.8)

2.0

±0.2

3.0

Unit: mm

±0.2

7.6

■ Absolute Maximum Ratings Ta = 25°C

+0.20
–0.10

±0.5

15.6

(2.5) (2.5)

231

+0.20

0.45

–0.10

0.7

±0.1

1: Emitter
2: Collector
3: Base

NS-B1 Package

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

25 V

20 V

12 V

0.5 A

1A

300 mW

150 °C

0.45

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage

1

Base-emitter saturation voltage

*

1

*

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

3

ON resistance

*

R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank R S T No rank

h

FE1

3: Ron Measurement circuit

*

200 to 350 300 to 500 400 to 800 200 to 800

= 10 µA, IE = 025V

= 1 mA, IB = 020V

= 10 µA, IC = 012V

VCB = 25 V, IE = 0 100 nA

2

*

VCE = 2 V, IC = 0.5 A 200 800 

VCE = 2 V, IC = 1 A 60

= 500 mA, IB = 20 mA 0.13 0.40 V

= 500 mA, IB = 20 mA 1.2 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 10 pF

ob

on

1 kΩ

0.6 Ω

IB = 1 mA

V

V

V

V

B

A

= V

B

R

on

V

× 1 000 (Ω)

− V

A

B

Publication date: April 2003 SJC00222BED

f = 1 kHz
V = 0.3 V

1

2SD1450

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

500

a

)

mW
(

400

C

300

200

Collector power dissipation P

100

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

BE(sat)

100

0.1

10

1

BE(sat)

Ta = −25°C

C

IC / IB = 10

25°C

75°C

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A

IC  V

IB = 4.0 mA

3.5 mA

3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

hFE  I

CE

C

Ta = 25°C

VCE = 2 V

)

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.01 0.1 1 10

)

400

)

300

MHz
(

T

200

100

Transition frequency f

0

− 0.1 −1 −10 −100

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

012108264

)

)

Collector-emitter voltage VCE (V

1 200

1 000

FE

800

Ta = 75°C

600

25°C

−25°C

400

Forward current transfer ratio h

200

0

0.01 0.1 1 10

Collector current IC (A

V

 I

CE(sat)

Ta = 75°C

25°C

C

IC / IB = 25

−25°C

Collector current IC (A

fT  I

E

VCB = 10 V
T

a

Emitter current IE (mA

)

= 25°C

)

20

Cob  V

(pF)

ob

C

16

12

8

4

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

120

100

)

mV

80

(

60

40

Noise voltage NV

20

0

0.01 0.1 1

)

2

NV  I

C

VCE = 10 V

= 80 dB

G

V

Function = FLAT

Rg = 100 kΩ

22 kΩ

5 kΩ

Collector current IC (mA

SJC00222BED

)