Panasonic 2SD1446 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
Features
■
●
High foward current transfer ratio h
●
High collector to base voltage V
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*
V
CEO(sus)
50/60Hz
mercury relay
120Ω
6V
T est circuit
1Ω
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
15V
CBO
CBO
CEO
EBO
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
L 10mH
FE
=25˚C)
C
Ratings
–55 to +150
=25˚C)
C
*
X
Y
G
500
400
5
10
6
40
2
150
VCB = 350V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 1A, f = 1MHz
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
TO–220 Full Pack Package(a)
Internal Connection
B
min
400
5
500
typ15max
100
1.5
2.5
Unit: mm
1:Base
2:Collector
3:Emitter
C
E
Unit
µA
V
V
V
V
MHz
1
Po wer Transistors 2SD1446, 2SD1446A
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2.0W)
(P
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=50
TC=–25˚C
100˚C
25˚C
Collector current IC (A
)
CE
5
4
)
A
(
C
3
2
Collector current I
1
0
0654132
)
Collector to emitter voltage VCE (V
IB=8mA
hFE—I
100000
30000
FE
10000
3000
1000
300
TC=100˚C
100
25˚C
Forward current transfer ratio h
30
–25˚C
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
C
TC=25˚C
1.5mA
VCE=2V
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10
)
pF
(
ob
10
10
10
Collector output capacitance C
V
CE(sat)—IC
IC/IB=50
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
Cob—V
4
3
2
1
0.1 1 10 1000.3 3 30
TC=100˚C
CB
25˚C
–25˚C
IE=0
f=1MHz
T
=25˚C
C
)
Collector to base voltage VCB (V
)
Area of safe operation (ASO) R
100
30
I
)
CP
10
A
(
I
C
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
1ms
DC
Collector to emitter voltage VCE (V
t=10µs
)
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
Loading...