Panasonic 2SD1424 Datasheet

Transistor

2SD1424

Silicon NPN epitaxial planer type

For low-frequency amplification

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

●

High foward current transfer ratio hFE.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

50
40
15

100

50
300
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

1.271.27

0.1

+0.2

–

0.45

2.54±0.15

0.7±0.1

Unit: mm

2.0±0.2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

NV

Rank R S T

h

FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

Conditions

VCB = 10V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

50
40
15

400

typ

0.05
200

80

max

0.1
1

2000

0.2

Unit

µA
µA

V
V
V

V

MHz

mV

1

Transistor

2SD1424

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

IB=100µA

Collector to emitter voltage VCE (V

hFE — I

C

1800

FE

1500

1200

900

600

300

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

90µA
80µA
70µA
60µA
50µA

40µA
30µA

20µA
10µA

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

–25˚C

fT — I

E

Emitter current IE (mA

VCE=10V

VCB=10V
Ta=25˚C

)

)

)
pF

(

Cob — V

5

4

ob

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

NV — I

C

120

100

80

60

40

20

0

0.01 0.03 0.1 0.3 1

VCE=10V
G

=80dB

V

Function=FLAT

Rg=100kΩ

22kΩ

5kΩ

Collector current IC (mA

)