Panasonic 2SD1423A, 2SD1423 Datasheet

Transistor

2SD1423, 2SD1423A

Silicon NPN epitaxial planer type

For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A

Features

■

●

Optimum for high-density mounting.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1423
2SD1423A
2SD1423

2SD1423A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Symbol

2SD1423
2SD1423A
2SD1423
2SD1423A

Ratings

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

30
60
25
50

7
1

0.5
300
150

–55 ~ +150

Symbol

I
I

V

V

V
h
h
V
f
C

CBO

CEO

FE1

FE2

T

CBO

CEO

EBO

*1

CE(sat)

ob

VCB = 20V, IE = 0
VCE = 20V, IB = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

Unit

V

V

V
A
A

mW

˚C
˚C

Conditions

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

min

30
60
25
50

7

*2

*2

*2

85
40

4.0±0.2

1.271.27

3.0±0.215.6±0.5

0.1

+0.2

–

0.45

2.54±0.15

typ

max

0.1

340

0.6

200

6

15

*2

Pulse measurement

0.7±0.1

1

Unit: mm

2.0±0.2

Unit

µA
µA

V

V

V

V

MHz

pF

1

Transistor

2SD1423, 2SD1423A

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

IC/IB=10

25˚C

75˚C

)

V

CE

1200

1000

)
mA

(

800

C

600

400

Collector current I

200

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

300

FE

250

Ta=75˚C

200

150

100

50

Forward current transfer ratio h

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

Ta=25˚C

IB=10mA

9mA
8mA
7mA
6mA
5mA

4mA
3mA
2mA

1mA

VCE=10V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

160

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0
– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

CE(sat)

Ta=75˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=10

)

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

10

8

ob

6

4

2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)